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High efficiency light emitting diodes

  • US 5,912,477 A
  • Filed: 05/20/1997
  • Issued: 06/15/1999
  • Est. Priority Date: 10/07/1994
  • Status: Expired due to Term
First Claim
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1. A high efficiency light emitting diode comprising:

  • a silicon carbide substrate that includes reticulate patterned sidewalls;

    at least two epitaxial layers on said substrate that form a p-n junction therebetween, said epitaxial layers having reticulate patterned side edges and with the reticulate patterned side edges of said epitaxial layers being coincident with said reticulate patterned sidewalls of said substrate; and

    ohmic contacts for applying a potential across said junction;

    characterized in that said p-n junction produces an emission in the blue region of the visible spectrum when a potential is applied thereacross.

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