MOSFET having buried shield plate for reduced gate/drain capacitance

• US 5,912,490 A
• Filed: 08/04/1997
• Issued: 06/15/1999
• Est. Priority Date: 08/04/1997
• Status: Expired due to Term

• Current Assignee: Hanger Solutions, LLC (IP Investments Group LLC)
• Original Assignee: Spectrian Corp. (REMEC, Inc.)
• Inventors: Hebert, Francois, Ng, Daniel
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/905,513
• Time in Patent Office: 680 Days
• Field of Search: 257/340, 257/365, 257/366, 257/409
• US Class Current: 257/340
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/7801 DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region lateral high-voltage MISFETs with channel well and drain offset region H01L29/7835
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

Gate to drain capacitance in a lateral DMOS and vertical DMOS field effect transistor is minimized by providing a conductive shield plate under the gate and between the gate and the drain of the transistor. In operation, the shield plate is preferably connected to a DC voltage potential and coupled to AC ground for RF power applications. The shield plate is readily fabricated in a conventional polysilicon gate process by adding one additional polysilicon deposition (or other suitable material), one additional mask, and one additional etch step. The shield plate can include a raised portion which provides lateral capacitive isolation between the gate and the drain. Alternatively, a shield contact can be provided above the shield plate and between the gate and drain to provide lateral isolation.

Claims

1. A field effect transistor having reduced gate to drain capacitance comprising:

a semiconductor body having a major surface,

a source region of first conductivity-type abutting said surface,

a drain region of said first conductivity-type abutting said surface and spaced from said source region with a channel therefrom,

a gate overlying said channel and part of said drain and insulated from the channel and the drain by a dielectric material, and

a shield plate positioned beneath said gate and between said gate and said drain and insulated from the gate and the drain by a dielectric material.

2. The field effect transistor as defined by claim 1 wherein said shield plate comprises a conductor selected from the group consisting of polysilicon, polycide, silicide, salicide, and refractory metals.

3. The field effect transistor as defined by claim 1 wherein said field effect transistor comprises a lateral field effect transistor.

4. The field effect transistor as defined by claim 1 wherein said field effect transistor comprises a vertical field effect transistor.

5. The field effect transistor as defined by claim 1 wherein said shield plate includes a contact for electrically biasing the shield plate.

6. The field effect transistor as defined by claim 5 wherein said field effect transistor comprises a lateral field effect transistor.

7. The field effect transistor as defined by claim 5 wherein said field effect transistor comprises a vertical field effect transistor.

8. The field effect transistor as defined by claim 5 wherein said shield plate is coupled to an AC ground.

9. The field effect transistor as defined by claim 8 wherein said shield plate is connected to a DC voltage potential.

10. The field effect transistor as defined by claim 5 wherein said shield plate is connected to a DC voltage potential.

11. The field effect transistor as defined by claim 5 wherein said contact is above said shield plate and provides lateral capacitive isolation between said gate and said drain.

12. The field effect transistor as defined by claim 1 wherein said transistor comprises a RF power amplifier.

13. The field effect transistor as defined by claim 1 wherein said shield plate includes a raised portion which provides lateral capacitive isolation between said gate and said drain.

14. The field effect transistor as defined by claim 1 and further including a metal source contact, said metal source contact extending over and above said gate to provide capacitive isolation between said gate and said drain.

15. The field effect transistor as defined by claim 14 wherein said metal source contact extends to and contacts said shield plate.