High voltage driver circuit with diode
First Claim
1. A driver circuit, for an inductive load, monolithically integrated on a semiconductor substrate doped with a first type of doping agent and on which is grown an epitaxial well, bounded by insulating regions, which has a second type of doping agent and in which is provided a further well housing at least one power transistor of the driver circuit, characterised in that said epitaxial well also houses a first and a second active region which house respectively the cathode terminal and the anode terminal of a protection diode connected to said transistor and which is provided with a buried region between the substrate and the epitaxial well in proximity of said active regions.
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Accused Products
Abstract
The invention relates to a structure for and the method of manufacturing a driver circuit for an inductive load monolithically integrated on a semiconductor substrate doped with a first type of doping agent and on which is grown an epitaxial well having a second type of doping agent. An insulated well doped with the same type of doping agent as the substrate, which houses at least one power transistor of the driver circuit, is provided within the epitaxial well. The epitaxial well also houses a first and a second active area which house the cathode terminal and anode terminal of a protection diode, respectively.
28 Citations
19 Claims
- 1. A driver circuit, for an inductive load, monolithically integrated on a semiconductor substrate doped with a first type of doping agent and on which is grown an epitaxial well, bounded by insulating regions, which has a second type of doping agent and in which is provided a further well housing at least one power transistor of the driver circuit, characterised in that said epitaxial well also houses a first and a second active region which house respectively the cathode terminal and the anode terminal of a protection diode connected to said transistor and which is provided with a buried region between the substrate and the epitaxial well in proximity of said active regions.
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5. A driver circuit for an inductive load, comprising:
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a semiconductor layer; a well disposed within the semiconductor layer; a diode disposed within the well, the diode having an anode and a cathode, the anode being coupled to the load, the diode operable to limit the turning on of a parasitic transistor; and a transistor disposed in the well, the transistor coupled between the diode and a reference voltage, the transistor operable to receive a control signal, and to couple the load to the reference voltage through the diode responsive to the control signal having a first state. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A driver circuit for an inductive load, comprising:
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a substrate; an epitaxial layer disposed over the substrate; a first well disposed within the epitaxial layer; a second well disposed within the first well; a first active region disposed within the first well; a second active region disposed within the first well; a diode having an anode and a cathode, the cathode disposed in the first active region, and the anode disposed in the second active region, the diode being coupled to the load, the diode operable to limit the turning on of a parasitic transistor; a transistor disposed at least in part within the second well, the transistor having a gate, a source, and a drain, the transistor operable to be coupled between a reference voltage and the diode, the transistor operable to receive a control signal and to couple the diode to the reference voltage responsive to the control signal; and a buried region disposed adjacent the locations where the substrate and the epitaxial layer meet, the buried region being disposed in the proximity of the first and second active regions. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification