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Semiconductor photo-sensor and method for manufacturing the same

  • US 5,912,504 A
  • Filed: 01/26/1998
  • Issued: 06/15/1999
  • Est. Priority Date: 07/16/1986
  • Status: Expired due to Fees
First Claim
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1. A semiconductor optical device comprising:

  • a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area;

    plural external leads;

    electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads; and

    a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means,wherein a distance D between a substantially planar outer surface of said sealing member for receiving light incident on said photo-electric conversion unit and the photo-electric conversion area of said photo-electric conversion elements satisfies a relation, D≧

    (1/2)·

    l/tan θ

    , wherein γ

    is a critical angle of total reflection of said sealing member with respect to air, and l is the maximum length of the photo-electric conversion area.

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