Semiconductor photo-sensor and method for manufacturing the same
First Claim
Patent Images
1. A semiconductor optical device comprising:
- a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area;
plural external leads;
electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads; and
a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means,wherein a distance D between a substantially planar outer surface of said sealing member for receiving light incident on said photo-electric conversion unit and the photo-electric conversion area of said photo-electric conversion elements satisfies a relation, D≧
(1/2)·
l/tan θ
, wherein γ
is a critical angle of total reflection of said sealing member with respect to air, and l is the maximum length of the photo-electric conversion area.
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Abstract
A semiconductor optical device is provided with a photo-electric conversion unit having plural photo-electric conversion elements and is entirely sealed by a sealing member. The photo-electric conversion elements are connected to external leads with electrical connectors. The distance D between a planar outer surface and a photoelectric conversion area satisfies the equation, D≧/2·l/tan θ, where θ is a critical angle of total reflection of the sealing member with respect to air and l is the maximum length of said photoelectric conversion area.
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Citations
12 Claims
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1. A semiconductor optical device comprising:
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a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area; plural external leads; electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads; and a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means, wherein a distance D between a substantially planar outer surface of said sealing member for receiving light incident on said photo-electric conversion unit and the photo-electric conversion area of said photo-electric conversion elements satisfies a relation, D≧
(1/2)·
l/tan θ
, wherein γ
is a critical angle of total reflection of said sealing member with respect to air, and l is the maximum length of the photo-electric conversion area. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11)
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7. A semiconductor optical device comprising:
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a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area; a plural external leads; electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads; a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means; and a transparent member comprising a material different from that of said transparent resin provided on said sealing member for receiving light incident on said photo-electric conversion unit, wherein a distance D between a substantially planar outer surface of said transparent member and the photo-electric conversion area satisfies a relation, D≧
(1/2)·
l/tan θ and
the distance d1 between an outersurface from which a light is indicant into said transparent resin and said photoelectric conversion area is less than (1/2)·
l/tan θ
, wherein θ
is a critical angle of total reflection of said transparent and of said transparent member with respect to air, and l is the maximum length of said photo-electric conversion area.
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12. A semiconductor photo-sensor comprising an array (1) of photo-sensing cells encapsulated in a light transmissive resin (4);
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said array (1) being located at a depth D from a bounding surface of said photo-sensor on a light incident side of said array (1), characterized in that the depth D is more than l2 /4 tan θ
1'"'"', so that the light reflected from the photosensing cell and further reflected from a bounding surface of the transmissive resin falls predominantly outside of the periphery of the photo-sensing array;
wherein l2 is a maximum dimension of a length of said array (1) and the angle θ
1 is the critical angle of total internal reflection for light internally reflected from said bounding surface of the transmissive resin.
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Specification