Method for fabricating copper-aluminum metallization
First Claim
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1. A method for fabricating copper alloy metallization in a recess defined in a dielectric layer of a substrate, the method comprising the steps of:
- depositing a diffusion barrier layer on the surfaces of the recess;
depositing a copper alloy layer on the diffusion barrier layer; and
annealing the copper alloy layer to form a first thin oxide layer on an exposed surface of the copper alloy layer, and a second thin oxide layer at the interface between the copper alloy layer and the diffusion barrier layer.
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Abstract
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
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Citations
13 Claims
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1. A method for fabricating copper alloy metallization in a recess defined in a dielectric layer of a substrate, the method comprising the steps of:
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depositing a diffusion barrier layer on the surfaces of the recess; depositing a copper alloy layer on the diffusion barrier layer; and annealing the copper alloy layer to form a first thin oxide layer on an exposed surface of the copper alloy layer, and a second thin oxide layer at the interface between the copper alloy layer and the diffusion barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating copper alloy metallization in a recess defined in a dielectric layer of a substrate, the method comprising the steps of:
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depositing a U-shaped diffusion barrier layer on the surfaces of the recess; depositing a copper alloy layer on the U-shaped diffusion barrier layer; and annealing the copper alloy layer to form a first thin oxide layer on an exposed surface of the copper alloy layer, and a second thin oxide layer at the interface between the copper alloy layer and the U-shaped diffusion barrier layer. - View Dependent Claims (13)
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Specification