Micromechanical sensor device

• US 5,914,520 A
• Filed: 03/26/1996
• Issued: 06/22/1999
• Est. Priority Date: 09/27/1993
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Werner, Wolfgang
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US08/619,571
• Time in Patent Office: 1,183 Days
• Field of Search: 257/415, 257/417, 257/419, 257/420, 257/418, 324/162, 324/661, 324/658, 361/283.1, 361/283.3
• US Class Current: 257/415
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285
• CPC Class Codes: B81C 1/00341 Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type

Abstract

A micromechanical device contains, on a carrier or substrate (1, 10), a micromechanical region which is covered on the chip by a planar covering (D) arranged on the carrier. A method for the production of a micromechanical device of this type provides that a body is formed in which a first insulating layer (2, 11) is arranged on a carrier (1, 10) and a silicon layer (3, 12) is arranged over the insulating layer. The silicon layer (3, 12) is structured, openings (L, LS) being formed down to the first insulating layers. An insulating layer region (IS, 13) and a planar further layer (P, 14) are applied. The further layer (P, 14) is structured, openings being formed down to the insulating layer region (IS, 13), the insulating layer region and the regions of the first insulating layer which are situated underneath it are selectively etched, and a covering layer is applied over the further layer as a planar covering (D). The device can be mounted in a plastic housing without a clean room atmosphere.

Claims

1. A micromechanical device in a micromechanical region, comprising:

a carrier;

an insulating layer arranged over the carrier;

a one-piece silicon layer having a first subregion directly on the insulating layer, and a second subregion, which has no insulating layer situated thereunder;

a movable structure which is formed by the second subregion and which is connected to the carrier via a through part of the silicon layer;

a further layer over the silicon layer which, at least in a region of the second subregion, is not in contact with the silicon layer and which has windows in the region of the second subregion; and

a covering layer as a planar covering over the further layer, by which a closed cavity is produced.

2. The device as claimed in claim 1, wherein the region contains a monocrystalline semiconductor layer.

3. The device as claimed in claim 1, wherein the further layer is a nitride layer, silicon nitride layer, phosphorus glass layer, metal layer or oxide layer.

4. The device as claimed in one of claims 1, wherein the further layer is a passivation layer.

5. The device as claimed in claim 1, wherein supports for the covering are arranged in the micromechanical region, which supports are separated from a surrounding movable structure in the micromechanical region.

6. The device as claimed in claim 1, wherein the movable structure forms an electrode which is oriented such that the movable structure is movable in a direction perpendicular to a surface of the carrier.

7. The device as claimed in claim 1, wherein the movable structure forms an electrode which is oriented such that the movable structure is movable in a direction parallel to a surface of the carrier.