Plasma processing apparatus
First Claim
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1. A plasma processing apparatus for processing a target substrate, using a plasma, comprising:
- an airtight process chamber;
exhaust means for exhausting and setting said process chamber into a vacuum state;
process gas supply means for supplying a process gas into said process chamber;
an electric-field generator for generating an RF electric field in said process chamber to convert said process gas into plasma;
a worktable arranged in said process chamber and having a mount surface for supporting said target substrate;
an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising at least three chuck segments arranged with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and
a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential.
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Abstract
A plasma processing apparatus has a susceptor with a mount surface on which an electrostatic chuck is arranged. The electrostatic chuck is formed of one inner chuck segment and four outer chuck segments. The chuck segments are arrayed with gaps interposed therebetween to prevent the electrostatic chuck from being distorted due to thermal stress.
94 Citations
20 Claims
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1. A plasma processing apparatus for processing a target substrate, using a plasma, comprising:
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an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; an electric-field generator for generating an RF electric field in said process chamber to convert said process gas into plasma; a worktable arranged in said process chamber and having a mount surface for supporting said target substrate; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising at least three chuck segments arranged with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A plasma processing apparatus for processing a target substrate, using a plasma, comprising:
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an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; a lower electrode arranged in said process chamber and having a mount surface for supporting said target substrate; an upper electrode arranged in said process chamber and facing said lower electrode; an RF power supply section for applying an RF power between said upper and lower electrodes and generating an RF electric field in said process chamber to convert said process gas into plasma; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising an inner chuck segment and an outer chuck section concentrically arranged relative to a center of said mount surface with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, said outer chuck section comprising at least three chuck segments arranged with a gap interposed therebetween to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification