Distributed voltage converter apparatus and method for high power microprocessor with array connections

• US 5,914,873 A
• Filed: 06/30/1997
• Issued: 06/22/1999
• Est. Priority Date: 06/30/1997
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices SDN Berhad (Advanced Micro Devices, Inc.)
• Inventors: Blish, Richard C. II
• Primary Examiner(s): Wong, Peter S.
• Assistant Examiner(s): Patel, Rajnikant B.
• Application Number:
  US08/885,677
• Time in Patent Office: 722 Days
• Field of Search: 363/147, 363/146, 363/98, 363/97, 363/17, 363/132, 361/420, 361/795, 361/409, 174/52.4, 174/68.5, 357/74
• US Class Current: 363/147
• CPC Class Codes: G06F 1/26 Power supply means, e.g. regulation thereof for memories G11C
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2924/15159 Side view
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/19103 interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive

Abstract

The present invention provides a relief to the low voltage, high current spiral trend being seen in the microprocessor industry. A microprocessor module is designed to receive a voltage V2, which is substantially higher than a logic gate utilization voltage V3. V2 is supplied at a current rating of I2 to a plurality of within-module voltage converters, designated as 220a, 220n, which directly distribute voltage V3 and the appropriate current portion I3 to the respective logic gates 210. Preferably, voltage V2 is substantially greater in magnitude than voltage V3, typically V2:V3 being at least 5:1 but preferably 40:1 to as much as 100:1. By example, V2=50 vdc, 12=3 amps and V3=1.0 vdc would satisfy the ratio considerations. The microprocessor loads serviced by the present invention constitute millions of logic gates requiring low voltages ranging from 0.75 Vdc to 1.5 Vdc. Other microprocessor loads, such as cache, can be powered with flip chip technology using the technique of the present invention. A selected number of microprocessor logic gates, designated as numeral 210, are powered through electrical interconnections 205 (bumps), from respective voltage converters 220a . . . 220n. Each voltage converter includes power conversion components, namely a pre-regulator pulse width modulator controller circuit 223, a thin film transformer 221, and output voltage regulator circuit 222 embedded in deep wells of substrate 230.

Claims

1. An integrated microelectronic circuit apparatus, said apparatus comprising:

a multi-layer integrated microelectronic circuit arrangement, said circuit arrangement comprising a microprocessor chip having a substantially large number of electronic circuits operable upon being electrically energized by on board generated power supply voltage sources;

a substrate layer member of said multi-layer integrated microelectronic circuit arrangement, said substrate layer member having a plurality of input and output pins for electrically and electronically communicating with said circuit arrangement, said plurality of input and output pins including a plurality of power supply voltage input pins electrically designed for collectively receiving an external power supply voltage source at a first current rated value and for returning a corresponding external power supply ground return current; and

a plurality of power supply voltage converters included in said circuit arrangement, each power supply voltage converter having micro-meter sized power supply voltage conversion components embedded in said substrate for generating a respective one of said on-board generated power supply voltage sources at a point of use location on said substrate layer member, each said on-board generated power supply voltage source having a voltage magnitude that is less than 2.5 Vdc and substantially less than said external power supply voltage source and being current rated for supplying a load current to a substantially small group of electronic circuit members of said substantially large number of electronic circuits,

said substrate layer member having a first plurality of circuit lands electrically interconnecting said plurality of power supply voltage input pins to respective input sides of said plurality of power supply voltage converters for facilitating distribution of said external power supply voltage to each one of said plurality of power supply voltage converters, each power supply voltage converter being electrically coupled at a point of use via a second plurality of circuit lands to a respective one of said group of electronic circuit members, each circuit land of said second plurality of circuit lands being exposed to said on-board generated power supply voltage source at a current density that is less than a current density limit of said circuit land.

2. An integrated microelectronic circuit apparatus, as described in claim 1, wherein:

said substantially large number of electronic circuits comprise at least 1000 microprocessor logic gates; and

said external power supply voltage source ranging from 20 Vdc to 60 Vdc, and said plurality of power supply voltage converters comprise at least 50 power supply voltage converters, each power supply voltage converter being rated to deliver a voltage magnitude in a range of 2.0 Vdc to 0.75 Vdc and a full range of load current to a substantially fewer quantity of said at least 1000 microprocessor logic gates.

3. An integrated microelectronic circuit apparatus, as described in claim 2, wherein:

said power supply voltage conversion components comprise a high frequency voltage converter operational in the Mhz frequency range comprising a pre-regulator pulse width modulator and controller circuit, a thin film transformer, and output voltage regulator circuit, said thin film transformer having a primary winding for receiving a Mhz range chopped voltage generated from said external power supply voltage source, and having a secondary winding that feeds said output voltage regulator circuit for generating said on-board generated power supply voltage source.

4. An integrated microelectronic circuit apparatus, as described in claim 3, wherein:

said voltage regulator comprises a rectifier, a Zener reference voltage generator and at least one noise decoupling capacitors.

5. An integrated microelectronic circuit apparatus, as described in claim 3, wherein:

each said thin film transformer having said primary and secondary windings formed by interconnecting metal layers embedded in said substrate layer member in a helical pattern about embedded ferromagnetic material.

6. An integrated microelectronic circuit apparatus, as described in claim 1, wherein:

said plurality of substantially large number of electronic circuits comprise at least 1000 microprocessor logic gates electrically connected to said substrate layer member via solder bump means electrically contacting said second plurality of circuit lands, said plurality of power supply voltage converters being disposed on said substrate layer member in a pattern consisting of a plurality of rows and columns, each power supply voltage converter supplying said on-board generated power supply voltage source to a substantially fewer quantity of said at least 1000 microprocessor logic gates.

7. An integrated microelectronic circuit apparatus, as described in claim 6, wherein:

said power supply conversion components comprise a high frequency voltage converter operational in the MHz frequency range comprising a pre-regulator pulse width modulator and controller circuit, a thin film transformer, and output voltage regulator circuit, said thin film transformer having a primary winding for receiving a MHz range chopped voltage generated from said external power supply voltage source, and having a secondary winding that feeds said output voltage regulator circuit for generating said on-board generated power supply voltage source.

8. An integrated microelectronic circuit apparatus, as described in claim 1, wherein:

said voltage regulator comprises a rectifier, a Zener reference voltage generator and at least one noise decoupling capacitor.

9. An integrated microelectronic circuit apparatus, as described in claim 7, wherein:

each said thin film transformer having said primary and secondary windings formed by interconnecting metal layers embedded in said substrate layer member in a helical pattern about embedded ferromagnetic material.

10. A microprocessor module apparatus, said apparatus comprising:

a multi-layer integrated microelectronic circuit arrangement, said circuit arrangement comprising a microprocessor chip having at least 1000 logic gates operable upon being electrically energized by on-board generated power supply voltage sources;

a substrate layer member of said multi-layer integrated microelectronic circuit arrangement, said substrate layer member having a plurality of input and output pins for electrically and electronically communicating with said circuit arrangement, said plurality of input and output pins including a plurality of power supply voltage input pins electrically designed for collectively receiving an external power supply voltage source at a first current rated value and for returning a corresponding external power supply ground return current; and

a plurality of power supply voltage converters included in said circuit arrangement, each power supply voltage converter having micro-meter sized power conversion components for generating a respective one of said on-board generated power supply voltage sources at a point of use location on said substrate layer member, each said on-board generated power supply voltage source having a voltage magnitude in a range of 2.0 Vdc to 0.75 Vdc and being substantially less than said external power supply voltage source such that a ratio of said external power supply voltage to said on-board generated power supply voltage comprises a ratio of at least 5;

1 to as much as 100;

1, and being current rated for supplying a load current to a selected small group of said at least 1000 microprocessor logic gates,

said substrate layer member having a first plurality of circuit lands electrically interconnecting said plurality of power supply voltage input pins to respective input sides of said plurality of power supply voltage converters for facilitating distribution of said external power supply voltage to each one of said plurality of power supply voltage converters, each power supply voltage converter being electrically coupled at a point of use via a second plurality of circuit lands to a respective one of said selected small group of logic gates, each circuit land of said second plurality of circuit lands being exposed to said range of said on-board generated power supply voltage source at a current density that is less than a current density limit of said circuit land.

11. A microprocessor module apparatus, as described in claim 10, wherein:

said power supply voltage conversion components comprise a high frequency voltage converter operational in the MHz frequency range comprising a pre-regulator pulse width modulator and controller circuit, a thin film transformer, and output voltage regulator circuit, said thin film transformer having a primary winding for receiving a MHz range chopped voltage generated from said external power supply voltage source, and having a secondary winding that feeds said output voltage regulator circuit for generating said on-board generated power supply voltage source.

12. A microprocessor module apparatus, as described in claim 11, wherein:

said voltage regulator comprises a rectifier, a Zener reference voltage generator and at least one noise decoupling capacitor.

13. A microprocessor module apparatus, as described in claim 11, wherein:

each said thin film transformer having said primary and secondary windings formed by interconnecting metal layers embedded in said substrate layer member in a helical pattern about embedded ferromagnetic material.

14. A microprocessor module apparatus, as described in claim 10, wherein:

said at least 1000 logic gates being electrically connected to said on-board generated power supply voltage source via solder bump means contacting said second plurality of circuit lands, said plurality of power supply voltage converters being disposed on said substrate layer member in a pattern consisting of a plurality of rows and columns, each power supply voltage converter supplying said on-board generated power supply voltage source to said selected small group of logic gates.

15. A microprocessor module apparatus, as described in claim 14, wherein:

said power conversion components comprise a high frequency voltage converter operational in the MHz frequency range comprising a pre-regulator pulse width modulator and controller circuit, a thin film transformer, and output voltage regulator circuit, said thin film transformer having a primary winding for receiving a MHz range chopped voltage generated from said external power supply source, and having a secondary winding that feeds said output voltage regulator circuit for generating said on-board generated power supply voltage source.

16. A microprocessor module apparatus, as described in claim 15, wherein:

said voltage regulator comprises a rectifier, a Zener reference voltage generator and at least one noise decoupling capacitor.

17. A microprocessor module apparatus, as described in claim 15, wherein:

each said thin film transformer having said primary and secondary windings formed by interconnecting metal layers embedded in said substrate layer member in a helical pattern about embedded ferromagnetic material.

18. A microprocessor module apparatus, said apparatus comprising:

a multi-layer integrated microelectronic circuit arrangement, said circuit arrangement comprising a microprocessor chip having at least 1000 logic gates operable upon being electrically energized by on-board generated power supply voltage sources;

a substrate layer member of said multi-layer integrated microelectronic circuit arrangement, said substrate layer member having a plurality of input and output pins for electrically and electronically communicating with said circuit arrangement, said plurality of input and output pins including a plurality of power supply voltage input pins electrically designed for collectively receiving an external power supply voltage source at a first current rated value and for returning a corresponding external power supply ground return current; and

at least fifty power supply voltage converters included in said circuit arrangement, each power supply voltage converter having micro-meter sized power conversion components for generating a respective one of said on-board generated second power supply voltage sources at a point of use location on said substrate layer member, each said on-board generated power supply voltage source having a voltage magnitude in a range of 2.0 Vdc to 0.75 Vdc and being substantially less than said external power supply voltage source such that a ratio of said external power supply voltage to said on-board generated power supply voltage comprises a ratio of at least 5;

1 to as much as 100;

1, and being current rated for supplying a load current to a selected small group of said at least 1000 microprocessor logic gates,

said substrate layer member having a first plurality of circuit lands electrically interconnecting said plurality of power supply voltage input pins to respective input sides of said at least fifty power supply voltage converters for facilitating distribution of said external power supply voltage source to each one of said at least fifty power supply voltage converters, each of said at least fifty power supply voltage converter being electrically coupled at a point of use location to a respective one of said selected small group of logic gates via solder bump means contacting a second plurality of circuit lands on said substrate layer member.

19. A microprocessor module apparatus, as described in claim 18, wherein:

said voltage regulator comprises a rectifier, a Zener reference voltage generator and at least one noise decoupling capacitor.

20. A microprocessor module apparatus, as described in claim 18, wherein:

each said thin film transformer having said primary and secondary windings formed by interconnecting metal layers embedded in said substrate layer member in a helical pattern about embedded ferromagnetic material.

21. A method of powering a high power microprocessors, said method comprising the steps of:

(a) providing a microprocessor module apparatus, said apparatus comprising;

a microprocessor chip having at least 1000 logic gates operable upon being electrically energized by on-board generated power supply voltage sources;

a substrate layer members, said substrate layer member having a plurality of input and output pins for electrically and electronically communicating with said microprocessor chip, said plurality of input and output pins including a plurality of power supply voltage input pins electrically designed for collectively receiving an external power supply voltage source at a first current rated value and for returning a corresponding external power supply ground return current; and

at least fifty power supply voltage converters, each power supply voltage converter having micro-meter sized power conversion components for generating a respective one of said on-board generated power supply voltage sources at a point of use location on said substrate layer member, each said on-board generated power supply voltage source having a voltage magnitude in a range of 2.0 Vdc to 0.75 Vdc and being substantially less than said external power supply voltage source such that a ratio of said external power supply voltage to said on-board generated power supply voltage comprises a ratio of at least 5;

1 to as much as 100;

1, and being current rated for supplying a load current to a selected small group of said at least 1000 microprocessor logic gates,

said substrate layer member having a first plurality of circuit lands electrically interconnecting said plurality of power supply voltage input pins to respective input sides of said at least fifty power supply voltage converters for facilitating distribution of said external power supply voltage source to each one of said at least fifty power supply voltage converters, each of said at least fifty power supply voltage converter being electrically coupled at a point of use location to a respective one of said selected small group of logic gates via solder bump means contacting a second plurality of circuit lands on said substrate layer member;

(b) distributing said external power supply voltage source to said plurality of power supply voltage input pins;

(c) further distributing said external power supply voltage source to respective ones of said at least fifty power supply voltage converters;

(d) converting said external power supply voltage source to said on-board generated power supply voltage source; and

(e) distributing said on-board generated power supply voltage source via said solder bump means and powering respective ones of said selected small group of logic gates.