Method of manufacturing a semiconductor device with a pn junction provided through epitaxy

• US 5,915,187 A
• Filed: 12/18/1996
• Issued: 06/22/1999
• Est. Priority Date: 12/21/1995
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Huisman, Frederikus R. J., Bulik, Oscar J. A., Dekker, Ronald, De Boer, Wiebe B.
• Primary Examiner(s): Nguyen, Tuan H.
• Application Number:
  US08/768,482
• Time in Patent Office: 916 Days
• Field of Search: 438/379, 438/380, 438/478, 438/503, 438/505, 438/507, 438/508
• US Class Current: 438/379
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 29/93 Variable capacitance diodes, e.g. varactors

Abstract

The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate (1), a pn junction (5) being formed between the second and first zones (3, 4, respectively). According to the invention, the method is characterized in that the epitaxial layer (2) is provided by means of a CVD process at a temperature below 800° C., the epitaxial layer (2) being provided in that first the first zone (3) and then the second zone (4) are epitaxially provided on the substrate (1), while no heat treatments at temperatures above 800° C. take place after the epitaxial layer (2) has been provided. The measure according to the invention renders it possible to achieve properties of semiconductor devices manufactured in accordance with the invention, for example the capacitance-voltage (CV) relation of varicap diodes, within wide limits according to specifications. In addition, semiconductor devices manufactured by the method according to the invention require no post-diffusion or measurement steps in order to bring the properties of the semiconductor device up to specifications.

Claims

1. A method of manufacturing a varicap diode having a pn junction, which comprises:

providing a silicon substrate of a first conductivity type;

providing a first epitaxial layer of the first conductivity type on said substrate using a CVD process at a temperature lower than about 800°

C.;

providing a second epitaxial layer of the second conductivity type opposite to that of said first conductivity type on said first epitaxial layer using a CVD process at a temperature lower than about 800°

C., said first and second epitaxial layers forming an epitaxial layer comprising said pn junction;

providing grooves which cut through the pn junction, whereby mesa structures with mutually insulated pn junctions are formed;

then

further processing said diode, using heat treatments only at temperatures below about 800°

C.; and

then

subdividing the substrate and the epitaxial layer into varicap diodes each comprising a mesa structure.

2. A method as claimed in claim 1, characterized in that the epitaxial layer is provided by a CVD process at a temperature below 750°

C., while no heat treatments at a temperature above 700°

C. take place after the epitaxial layer has been provided.

3. A method as claimed in claim 1, characterized in that, after the grooves have been provided in the epitaxial layer, a surface of the grooves is given a passivating layer by means of an LPCVD process at a temperature below 700°

C.

4. A method as claimed in claim 1, characterized in that dopant atoms are provided in the first zone adjacent the pn junction with a doping concentration below 10¹⁸ atoms/cm³ and dopant atoms are provided in the second zone adjacent the pn junction with a doping concentration greater than or equal to 10¹⁹ atoms cm³.