Method of manufacturing a semiconductor device with a pn junction provided through epitaxy
First Claim
1. A method of manufacturing a varicap diode having a pn junction, which comprises:
- providing a silicon substrate of a first conductivity type;
providing a first epitaxial layer of the first conductivity type on said substrate using a CVD process at a temperature lower than about 800°
C.;
providing a second epitaxial layer of the second conductivity type opposite to that of said first conductivity type on said first epitaxial layer using a CVD process at a temperature lower than about 800°
C., said first and second epitaxial layers forming an epitaxial layer comprising said pn junction;
providing grooves which cut through the pn junction, whereby mesa structures with mutually insulated pn junctions are formed;
thenfurther processing said diode, using heat treatments only at temperatures below about 800°
C.; and
thensubdividing the substrate and the epitaxial layer into varicap diodes each comprising a mesa structure.
1 Assignment
0 Petitions
Accused Products
Abstract
The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate (1), a pn junction (5) being formed between the second and first zones (3, 4, respectively). According to the invention, the method is characterized in that the epitaxial layer (2) is provided by means of a CVD process at a temperature below 800° C., the epitaxial layer (2) being provided in that first the first zone (3) and then the second zone (4) are epitaxially provided on the substrate (1), while no heat treatments at temperatures above 800° C. take place after the epitaxial layer (2) has been provided. The measure according to the invention renders it possible to achieve properties of semiconductor devices manufactured in accordance with the invention, for example the capacitance-voltage (CV) relation of varicap diodes, within wide limits according to specifications. In addition, semiconductor devices manufactured by the method according to the invention require no post-diffusion or measurement steps in order to bring the properties of the semiconductor device up to specifications.
-
Citations
4 Claims
-
1. A method of manufacturing a varicap diode having a pn junction, which comprises:
-
providing a silicon substrate of a first conductivity type; providing a first epitaxial layer of the first conductivity type on said substrate using a CVD process at a temperature lower than about 800°
C.;providing a second epitaxial layer of the second conductivity type opposite to that of said first conductivity type on said first epitaxial layer using a CVD process at a temperature lower than about 800°
C., said first and second epitaxial layers forming an epitaxial layer comprising said pn junction;providing grooves which cut through the pn junction, whereby mesa structures with mutually insulated pn junctions are formed;
thenfurther processing said diode, using heat treatments only at temperatures below about 800°
C.; and
thensubdividing the substrate and the epitaxial layer into varicap diodes each comprising a mesa structure. - View Dependent Claims (2, 3, 4)
-
Specification