Sequential chemical vapor deposition

• US 5,916,365 A
• Filed: 08/16/1996
• Issued: 06/29/1999
• Est. Priority Date: 08/16/1996
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: Dr. Arthur Sherman
• Inventors: Sherman, Arthur
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Powell, Alva C.
• Application Number:
  US08/699,002
• Time in Patent Office: 1,047 Days
• Field of Search: 117/88, 117/89, 117/92, 117/103, 117/104, 117/940, 117/950, 117/952
• US Class Current: 117/92
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Claims

1. A process of growing a thin film by a sequential chemical vapor deposition process, comprising the steps of:

placing a part in a chamber;

evacuating the chamber of gases;

exposing the part to a gaseous first reactant, including a non-semiconductor element of the thin film to be formed, wherein the first reactant adsorbs on the part;

evacuating the chamber of gases;

exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to one or more elements, wherein a thin film is formed; and

evacuating the chamber of gases.

2. The process of claim 1, wherein the parts to be coated are maintained at temperatures up to 500°

C. in the chamber.

3. The process of claim 1, wherein the first reactant includes a halogen atom.

4. The process of claim 1, wherein the first reactant is a metal-organic molecules including an elemental metal species.

5. The process of claim 1, wherein the radicals of the second reactant are selected from the group consisting of oxygen atoms, nitrogen atoms, hydrogen atoms, OH molecules, NH molecules or a combination thereof.

6. The process of claim 1, wherein the radicals of the second reactant are generated in a radical generator in communication with the chamber.

7. The process of claim 1, wherein the radicals of the second reactant are generated by surrounding the chamber with an RF excitation coil, wherein the thin film being formed is a dielectric material.

8. The process of claim 1, wherein the first reactant is tetraethoxysilane and the second reactant is atomic oxygen which converts the first reactant to a thin film of silicon dioxide.

9. The process of claim 1, wherein the first reactant is titanium tetrachloride and the second reactant is atomic hydrogen which converts the first reactant to a thin film of titanium.

10. The process of claim 1, wherein the first reactant is a titanium organometallic compound and the second reactant are hydrogen atoms or HN molecules which convert the first reactant to a thin film of titanium nitride.

11. The process of claim 1, wherein the first reactant is an aluminum compound and the second reactant is atomic hydrogen which converts the first reactant to a thin film of aluminum.

12. The process of claim 1, wherein the first reactant is a copper compound and the second reactant is atomic hydrogen which converts the first reactant to a thin film of copper.

13. A process of coating a fiber preform with a conformal thin film by a sequential chemical vapor deposition process to form a low porosity structure of high strength, comprising the steps of:

forming a porous material in a predetermined shape;

inserting the porous material in a chamber;

evacuating the chamber of gases;

exposing the porous material to a first reactant, including one or more elements of the film to be formed, wherein the first reactant adsorbs on the part;

evacuating the chamber of gases; and

exposing the porous material to a second reactant which converts the first reactant to a thin film.

14. A process of coating aluminum with aluminum oxide, formed by a sequential chemical vapor deposition process, so that the coating is highly conformal and provides protection against corrosion of the aluminum, comprising the steps of:

inserting the aluminum part in a chamber;

evacuating the chamber of gases;

exposing the aluminum to a first reactant, including aluminum as an element, wherein the first reactant adsorbs on the part;

evacuating the chamber of gases; and

exposing the aluminum coated with the first reactant to a second reactant which oxidizes and converts the first reactant to a thin film of aluminum oxide.

15. A process of growing a thin layer of ceramic material between adjacent parts to cause the parts to be joined for a ceramic brazing process, comprising the steps of:

inserting the ceramic parts in a chamber;

evacuating the chamber of gases;

exposing the ceramic parts to a first reactant which adsorbs on the ceramic parts;

evacuating the chamber of gases; and

exposing the ceramic parts coated with the first reactant to a second reactant which converts the first reactant to a thin film of ceramic material.

16. A process of growing a thin film by a sequential chemical vapor deposition process, comprising the steps of:

placing a part in a chamber;

evacuating the chamber of gases;

exposing the part to a gaseous first reactant, containing a metallic element, wherein the first reactant adsorbs on the part;

evacuating the chamber of gases;

exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to a metallic element; and

evacuating the chamber of gases.

17. The process of claim 16, wherein the first reactant is a metal selected from a group consisting of aluminum, copper, tantulum, titanium, and tungsten, and the second reactant is a radical selected from a group consisting of hydrogen, nitrogen, oxygen, or a combination thereof.

18. A process of growing a thin film by a sequential chemical vapor deposition process, which comprises:

placing a part in a chamber;

evacuating the chamber of gases;

exposing the part to a gaseous first reactant selected from the group consisting of Si and Ge, wherein the first reactant adsorbs on the part;

evacuating the chamber of gases;

exposing the part, coated with the first reactant, to a gaseous second reactant of radicals selected from the group consisting of O and N, wherein the radicals convert the first reactant on the part to a thin film selected from the group consisting of silicon nitride, silicon oxide, germanium nitride, germanium oxide; and

evacuating the chamber of gases.

19. A process of growing silicon dioxide thin film by a sequential chemical vapor deposition process, which comprises:

placing a part in a chamber;

evacuating the chamber of gases;

introducing a first reactant of gaseous silicon compound not containing oxygen into the chamber to expose the part to the first reactant, wherein the first reactant includes the silicon of the thin film to be formed, so that the first reactant adsorbs on the part;

evacuating the chamber of gases;

exposing the part, coated with the first reactant to hydrogen atoms, wherein the hydrogen atoms reduce the first reactant on the part to silicon;

evacuating the chamber of gases; and

exposing the part coated with silicon to oxygen, wherein the oxygen converts the silicon on the part to silicon dioxide.

20. A process of growing silicon dioxide thin film by a sequential chemical vapor deposition process, which comprises:

placing a part in a chamber;

evacuating the chamber of gases;

introducing a first reactant of gaseous silicon precursor containing oxygen into the chamber to expose the part to the first reactant, wherein the first reactant includes the silicon and oxygen of the thin film to be formed, so the first reactant adsorbs on the part;

evacuating the chamber of gases;

exposing the part coated with the first reactant to oxygen atoms, wherein the oxygen atoms convert the first reactant on the part to silicon dioxide; and

evacuating the chamber of gases.