CMOS bidirectional buffer for mixed voltage applications

• US 5,917,348 A
• Filed: 09/02/1997
• Issued: 06/29/1999
• Est. Priority Date: 09/02/1997
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute--Computer & Communication Research Labs.
• Inventors: Chow, Hwang-Cherng
• Primary Examiner(s): Wells, Kenneth B.
• Application Number:
  US08/922,469
• Time in Patent Office: 665 Days
• Field of Search: 327/108-112, 327/333, 327/374-377, 327/170, 327/434, 327/436, 327/437, 327/390, 327/589, 326/88
• US Class Current: 327/108
• CPC Class Codes: H03K 19/01714 by bootstrapping, i.e. by positive feed-back
• CPC Class Codes: H03K 19/01721 by means of a pull-up or down element
• CPC Class Codes: H03K 19/018592 with a bidirectional operation

Abstract

In a preferred embodiment of the present invention, a bidirectional buffer connects a first device, such as a CMOS chip having a first voltage, such as VCC, to a second device having a second voltage, such as VDD, through a terminal pad. The buffer includes a bootstrap capacitor to assist in driving up the terminal pad. In particular, the buffer comprises an output and an input portion. The output portion includes a first driver for driving the terminal pad up to VDD and a second driver for driving the terminal pad down to VSS. The first driver includes a pull-up PMOS transistor and a pull-up NMOS transistor connected in series and the second driver includes a pull-down NMOS transistor. Further, preferably one pair of push-pull bootstrap control transistors are connected in parallel to the gate of the pull-up NMOS transistor for quickly driving up the first driver to a voltage level based on the bootstrap capacitor having a predetermined capacitance. The input portion includes an invertor and a protection resistor for protecting the invertor from static charges.

Claims

1. An output buffer for connecting a first device supplied with a first voltage to a second device supplied with a second voltage, comprising:

a first driver for driving a terminal pad up to said second voltage;

a second driver for driving said terminal pad down to a voltage VSS;

at least one pair of push-pull bootstrap control transistors, connected to said first driver, for driving up said first driver to a voltage level based on a bootstrap capacitor having a predetermined capacitance, wherein the voltage level at a node between each said at least one pair of bootstrap control transistors is geater than the sum of said second voltage and a predetermined threshold voltage of said first driver.

2. The output buffer of claim 1, wherein said capacitor has first and second terminals, where said first terminal is connected between said bootstrap control transistors and said first driver and said second terminal is connected between said first and second drivers.

3. The output buffer of claim 2, wherein said first driver comprises a PMOS first driver transistor and an NMOS first driver transistor connected in series at a node t1.

4. The output buffer of claim 3, further comprising a parasitic diode connected in parallel at a node t1 between said PMOS and NMOS first driver transistors.

5. The output buffer of claim 3, wherein said first terminal is connected between said pair of bootstrap control transistors and the gate of said NMOS first driver transistor.

6. The output buffer of claim 5, wherein said second driver comprises an NMOS second driver transistor.

7. The output buffer of claim 6, wherein said second terminal is connected between the source of said NMOS first driver transistor and said drain of said NMOS second driver transistor.

8. The output buffer of claim 2, where said first driver comprises a PMOS and a first NMOS transistor connected in sexies at a node t1 and a second NMOS transistor having a gate connected to a gate of said PMOS transistor.

9. The output buffer of claim 1, further comprising:

a first predriver circuit, connected to said first driver; and

a second predriver circuit, connected to said second driver.

10. The output buffer of claim 9, wherein said first predriver is a NAND gate and said second predriver is a NOR gate.

11. The output buffer of claim 1, wherein said first voltage is greater than or equal to said second voltage.

12. The output buffer of claim 3, wherein said capacitor is formed from the inherent overlapped capacitance of said NMOS first driver transistor.

13. The output buffer of claim 3, wherein said capacitor is formed from an additional CMOS transistor connected in series with said NMOS first driver transistor.

14. The output buffer of claim 6, fiter comprising a third NMOS transistor having a drain connected to a source of said NMOS first driver transistor and having a source connected to a drain of said NMOS second driver transistor, for improving stress voltages applied to the drain of said NMOS second driver transistor.

15. The output buffer of claim 4, wherein said output buffer is formed on a first integrated circuit, such that said terminal pad of said output buffer is connected to an output driver of a second integrated circuit through a pull-up resistor.

16. The output buffer of claim 15, wherein the voltage level between said pair of bootstrap control transistors is less than the sum of said second voltage level, a predetermined threshold voltage of said NMOS first driver transistor and the voltage drop across said diode.

17. A bidirectional buffer for connecting a first device supplied with a first voltage to a second device supplied with a second voltage, comprising:

an output portion having;

a first driver for driving a terminal pad up to said second voltage;

a second driver for driving said terminal pad down to a voltage VSS;

at least one pair of push-pull bootstrap control transistors, connected to said first driver, for driving up said first driver to a voltage level due to the effect of a bootstrap capacitor having a predetermined capacitance, wherein the voltage level at a node between each said at least one pair of bootstrap control transistor is greater than the sum of said second voltage and a predetermined threshold voltage of said first driver, and

an input portion, connected to the first and second drivers, for receiving signals from a bonding pad.

18. The bidirectional buffer of claim 17, wherein said input portion includes an invertor and a protection resistor for protecting said invertor from static charges.

19. The bidirectional buffer of claim 18, wherein said input portion further includes an NMOS transistor, having its gate connected to said second voltage source and one of its drain and source connected to said protection resistor and the other of its drain and source connected to said invertor, for reducing stress voltages applied to said invertor.

20. The bidirectional buffer of claim 17, wherein said capacitor has first and second terminals, where said first terminal is connected between said bootstrap control transistors and said first driver and said second terminal is connected between said first and second drivers.

21. The bidirectional buffer of claim 20, wherein said first driver comprises a PMOS first driver transistor and an NMOS first driver transitor connected in series at a node t1.

22. The bidirectional buffer of claim 21, further comprising a parasitic diode connected in parallel at a node t1 between said PMOS and NMOS first driver transistors.

23. The bidirectional buffer of claim 21, wherein said first terminal is connected between said pair of bootstrap control transistors and the gate of said NMOS first driver transistor.

24. The bidirectional buffer of claim 23, wherein said second driver comprises an NMOS second driver transistor.

25. The bidirectional buffer of claim 24, wherein said second terminal is connected between the source of said NMOS first driver transistor and said drain of said NMOS second driver transistor.

26. The bidirectional buffer of claim 20, wherein said first driver comprises a PMOS and a first NMOS transitor connected in series at a node t1 and a second NMOS transistor having a gate connected to a gate of said PMOS transistor.

27. The bidirectional buffer of claim 17, further comprising:

a first predriver circuit, connected to said first driver; and

a second predriver circuit, connected to said second driver.

28. The bidirectional buffer of claim 27, wherein said first predriver is an NAND gate and said second predriver is an NOR gate.

29. The bidirectional buffer of claim 17, wherein said first voltage is greater than or equal to said second voltage.

30. The bidirectional buffer of claim 21, wherein said capacitor is formed from the inherent overlapped capacitance of said NMOS first driver transistor.

31. The bidirectional buffer of claim 21, wherein said capacitor is formed from an additional CMOS transitor connected between said NMOS-second driver transistor and said NMOS first driver transistor.

32. The bidirectional buffer of claim 23, futher comprising a third NMOS transistor havig a drain connected to a source of said NMOS first driver transistor and having a source connected to a drain of said NMOS second driver transistor, for improving stress voltages applied to the drain of said NMOS second driver transistor.

33. The bidirectional buffer of claim 22, wherein said bidirectional buffer is formed on a first integrated circuit, such that said terminal pad of said bidirectional buffer is connected to an output driver of a second integrated circuit through a pull-up resistor.

34. The bidirectional buffer of claim 33, wherein the voltage level between said pair of bootstrap control transistors is less than the sum of said second voltage level, a predetermined threshold voltage of said NMOS first driver transistor and the voltage drop across said diode.