Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby
First Claim
1. A method of forming a display device, comprising the steps of:
- forming a gate electrode on a face of a substrate;
forming a first insulating layer on the gate electrode and on the face;
forming a first amorphous semiconductor layer on the first insulating layer, opposite the gate electrode;
forming a channel protection layer on the first amorphous semiconductor layer, opposite the gate electrode; and
etching the first insulating layer to expose the face of the substrate while simultaneously etching a portion of the channel protection layer extending opposite the gate electrode.
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Accused Products
Abstract
Methods of forming active matrix display devices with reduced susceptibility to image sticking include the steps of forming a gate electrode on a face of a substrate and then forming a first insulating layer on the gate electrode and on the face to electrically isolate the gate electrode from adjacent regions. A first amorphous semiconductor layer is then formed on the first insulating layer. In particular, the first amorphous semiconductor layer, which acts as the active region of the TFT, is patterned to extend opposite the gate electrode. A channel protection layer is also formed on the first amorphous semiconductor layer. The channel protection layer is designed to protect the channel portion of the active region in the first amorphous semiconductor layer from potential damage which may occur during subsequent process steps. Then, the first insulating layer and the channel protection layer are etched simultaneously until the face of the substrate is exposed. Here, the step of forming a gate electrode includes the steps of forming a first conductive layer having a thickness of about 2000 Å on the face of the substrate and then patterning the first conductive layer to define a gate electrode of a thin-film transistor and a common electrode. The first insulating layer is then formed on the gate electrode and the common electrode, but is subsequently removed from the common electrode to reduce image-sticking effects which may impair display performance in in-plane switching (IPS) TFT-LCD display devices.
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Citations
23 Claims
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1. A method of forming a display device, comprising the steps of:
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forming a gate electrode on a face of a substrate; forming a first insulating layer on the gate electrode and on the face; forming a first amorphous semiconductor layer on the first insulating layer, opposite the gate electrode; forming a channel protection layer on the first amorphous semiconductor layer, opposite the gate electrode; and etching the first insulating layer to expose the face of the substrate while simultaneously etching a portion of the channel protection layer extending opposite the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A thin-film transistor display device, comprising:
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a gate electrode on a face of a substrate; a first electrically insulating layer having a first thickness, on the gate electrode; a first amorphous silicon layer having a second thickness, on the first electrically insulating layer, opposite the gate electrode; a channel protection layer having a third thickness greater than the sum of the first thickness and second thickness, on the first amorphous silicon layer; a pixel electrode electrically coupled to a first end of the first amorphous silicon layer; and a data line electrically coupled to a second end of the first amorphous silicon layer. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method of forming display device, comprising the steps of:
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forming a first conductive layer on a face of a substrate; etching the first conductive layer to define a gate electrode and a common electrode; forming a first insulating layer on the gate electrode, on the common electrode and on the face; forming a first amorphous semiconductor layer on the first insulating layer, opposite the gate electrode; forming a channel protection layer on the first amorphous semiconductor layer, opposite the gate electrode; forming a second amorphous semiconductor layer on the channel protection layer; forming a second conductive layer on the second amorphous semiconductor layer; and etching the second conductive layer, the second amorphous semiconductor layer, the first amorphous semiconductor layer and the first insulating layer to define a source electrode, a drain electrode and a pixel electrode; wherein a thickness of the channel protection layer is greater than a sum of the thicknesses of the first insulating layer and the first amorphous semiconductor layer. - View Dependent Claims (22, 23)
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Specification