×

Cell plate structure for a ferroelectric memory

  • US 5,917,746 A
  • Filed: 08/27/1997
  • Issued: 06/29/1999
  • Est. Priority Date: 08/27/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A memory device comprising:

  • an array of ferroelectric memory cells arranged in rows and columns, the memory cells having a first plate and a second plate;

    a plurality of plate line segments corresponding to each row of the array, the plate line segments coupled to the second plate of the memory cells; and

    a plurality of plate line driver circuits coupled to each one of the plate line segments, wherein the plurality of plate line driver circuits are located at opposite ends of each one of the plurality of plate line segments.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×