Method for manufacturing a combination of a pressure sensor and an electrochemical sensor

• US 5,918,110 A
• Filed: 05/30/1997
• Issued: 06/29/1999
• Est. Priority Date: 05/31/1996
• Status: Expired due to Term

• Current Assignee: Sphere Medical Limited (Sphere Medical Holding Ltd.)
• Original Assignee: Siemens AG
• Inventors: Abraham-Fuchs, Klaus, Gumbrecht, Walter, Hierold, Christofer, Scheiter, Thomas
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): SULSKY, MARTIN S
• Application Number:
  US08/866,414
• Time in Patent Office: 760 Days
• Field of Search: 438/48, 438/49, 438/50, 438/53, 438/59, 129/303, 129/675 R, 129/419 PG, 129/630, 129/631, 129/632, 129/633, 433/6, 257/350, 257/352
• US Class Current: 438/48
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured. The pressure sensor is etched free either before the gas sensor is etched free, or after the deposition of the additional protective layer.

Claims

1. A method for manufacturing a combination of a pressure sensor and an electrochemical sensor by integrating a micromechanical pressure sensor and an electrochemical sensor on a substrate, comprising the steps of:

(a) forming a plurality of electrically conductive regions in a substrate;

(b) forming a basic structure for an electrochemical sensor on said substrate, said basic structure comprising at least one electrically insulating layer;

(c) covering said basic structure of said electrochemical sensor with a protective layer and leaving a first free region for a pressure sensor;

(d) depositing a sensor layer for said pressure sensor in said first free region and providing said sensor layer with etching openings;

(e) etching out a hollow space between said sensor layer and said substrate, steps (a) through (e) producing an intermediate structure having an outermost surface;

(f) depositing a planarization layer of a dielectric material over an entirety of said outermost surface of said intermediate structure;

(g) providing regions for electrical connection to said intermediate structure and producing electrically conductive connections to said regions for electrical connection;

(h) outwardly exposing said sensor layer of said pressure sensor;

(i) etching a second free region for said electrochemical sensor and depositing and structuring at least one noble metal electrode in said second free region;

(j) depositing an additional protective, layer over said noble metal electrode; and

(k) depositing and structuring a plurality of additional layers for said electrochemical sensor.

2. A method as claimed in claim 1 wherein step (h) comprises outwardly exposing said sensor layer of said pressure sensor by dry etching.

3. A method as claimed in claim 1 wherein step (b) comprises depositing a nitride layer as said at least one insulating layer and wherein step (i) comprises etching said second free region for said electrochemical sensor including removing said protective layer by wet-chemical etching.

4. A method as claimed in claim 1 wherein step (j) comprises depositing an oxide layer by PECVD, followed by depositing a nitride layer.

5. A method as claimed in claim 1 wherein step (i) comprises first etching said second free region for said electrochemical sensor including removing said protective layer in said region, and depositing a platinum metallization as said noble metal electrode and structuring said platinum metallization to form a platinum contact covering at least a portion of said insulating layer of said basic structure of said electrochemical sensor and a portion of edges of layers lateral to the second free region.

6. A method as claimed in claim 1 wherein step (b) comprises manufacturing a basic structure for said electrochemical sensor comprising an ISFET, and wherein step (i) further comprises providing said noble metal electrode with a silver contact.

7. A method as claimed in claim 1 wherein step (b) comprises manufacturing a basic structure for said electrochemical sensor comprising an ISFET, and wherein step (i) further comprises providing said noble metal electrode with a silver chloride contact.

8. A method as claimed in claim 1 wherein step (c) comprises producing said protective layer by depositing an oxide layer and partially removing said oxide layer.

9. A method as claimed in claim 1 comprising the additional step of integrating said pressure sensor and said electrochemical sensor with an electronic circuit including, in step (a) providing at least one component of said electronic circuit on said substrate and conducting steps (a), (f) and (g) as steps in a CMOS process for integrating said electronic circuit.

10. A method as claimed in claim 9 wherein step (g) comprises manufacturing contact holes in said planarization layer, said contact holes comprising said regions for electrical connection, by dry etching and filling said contact holes with electrically conductive material and depositing and structuring at least one metallization plane for printed conductors over said planarization layer.

11. A method as claimed in claim 1 wherein step (b) comprises manufacturing said basic structure as an ISFET and comprising the additional step of manufacturing an additional basic structure comprising a reference ISFET and wherein step (a) comprises forming electrically conductive regions in said substrate for said ISFET and for said reference ISFET, wherein step (c) includes covering said ISFET with said protective layer, and wherein step (i) comprises first etching said second free region for said electrochemical sensor and a third free region for said reference ISFET by removing said protective layer in both said second and third free regions, and depositing and structuring a further noble metal electrode in said third free region for said reference ISFET by depositing a platinum metallization in said third free region and structuring said platinum metallization to form a platinum contact covering at least a channel region of said reference ISFET and a portion of edges of layers arranged laterally to said third free region.

12. A method for manufacturing a combination of a pressure sensor and an electrochemical sensor by integrating a micromechanical pressure sensor and an electrochemical sensor on a substrate, comprising the steps of:

(a) forming a plurality of electrically conductive regions in a substrate;

(b) forming a basic structure for an electrochemical sensor on said substrate, said basic structure comprising at least one electrically insulating layer;

(c) covering said basic structure of said electrochemical sensor with a protective layer and leaving a first free region for a pressure sensor;

(d) depositing a sensor layer for said pressure sensor in said first free region and providing said sensor layer with etching openings;

(e) etching out a hollow space between said sensor layer and said substrate, steps (a) through (e) producing an intermediate structure having an outermost surface;

(f) depositing a planarization layer of a dielectric material over an entirety of said outermost surface of said intermediate structure;

(g) providing regions for electrical connection to said intermediate structure and producing electrically conductive connections to said regions for electrical connection;

(h) etching a second free region for said electrochemical sensor and depositing and structuring at least one noble metal electrode in said second free region;

(i) depositing an additional protective layer over said noble metal electrode;

(j) outwardly exposing said sensor layer of said pressure sensor; and

(k) depositing and structuring a plurality of additional layers for said electrochemical sensor.

13. A method as claimed in claim 12 wherein step (j) comprises outwardly exposing said sensor layer of said pressure sensor by dry etching.

14. A method as claimed in claim 12 wherein step (b) comprises depositing a nitride layer as said at least one insulating layer and wherein step (h) comprises etching said second free region for said electrochemical sensor including removing said protective layer by wet-chemical etching.

15. A method as claimed in claim 12 wherein step (i) comprises depositing an oxide layer by PECVD, followed by depositing a nitride layer.

16. A method as claimed in claim 12 wherein step (h) comprises first etching said second free region for said electrochemical sensor including removing said protective layer in said region, and depositing a platinum metallization as said noble metal electrode and structuring said platinum metallization to form a platinum contact covering at least a portion of said insulating layer of said basic structure of said electrochemical sensor and a portion of edges of layers lateral to the second free region.

17. A method as claimed in claim 12 wherein step (b) comprises manufacturing a basic structure for said electrochemical sensor comprising an ISFET, and wherein step (h) further comprises providing said noble metal electrode with a silver contact.

18. A method as claimed in claim 12 wherein step (b) comprises manufacturing a basic structure for said electrochemical sensor comprising an ISFET, and wherein step (h) further comprises providing said noble metal electrode with a silver chloride contact.

19. A method as claimed in claim 12 wherein step (c) comprises producing said protective layer by depositing an oxide layer and partially removing said oxide layer.

20. A method as claimed in claim 12 comprising the additional step of integrating said pressure sensor and said electrochemical sensor with an electronic circuit including, in step (a) providing at least one component of said electronic circuit on said substrate and conducting steps (a), (f) and (g) as steps in a CMOS process for integrating said electronic circuit.

21. A method as claimed in claim 20 wherein step (g) comprises manufacturing contact holes in said planarization layer, said contact holes comprising said regions for electrical connection, by dry etching and filling said contact holes with electrically conductive material and depositing and structuring at least one metallization plane for printed conductors over said planarization layer.

22. A method as claimed in claim 12 wherein step (b) comprises manufacturing said basic structure as an ISFET and comprising the additional step of manufacturing an additional basic structure comprising a reference ISFET and wherein step (a) comprises forming electrically conductive regions in said substrate for said ISFET and for said reference ISFET, wherein step (c) includes covering said ISFET with said protective layer, and wherein step (h) comprises first etching said second free region for said electrochemical sensor and a third free region for said reference ISFET by removing said protective layer in both said second and third free regions, and depositing and structuring a further noble metal electrode in said third free region for said reference ISFET by depositing a platinum metallization in said third free region and structuring said platinum metallization to form a platinum contact covering at least a channel region of said reference ISFET and a portion of edges of layers arranged laterally to said third free region.