Process for forming gate oxides possessing different thicknesses on a semiconductor substrate
First Claim
1. A process for fabricating an integrated circuit comprising the steps of:
- (a) growing a semiconductor layer on a substrate;
(b) forming an oxide layer upon the semiconductor layer;
(c) amorphizing a selected area of the semiconductor layer to form an amorphized underlayer;
(d) removing the oxide layer to expose the semiconductor layer having both amorphized and non-amorphized regions;
(e) simultaneously growing gate oxide on the amorphized and non-amorphized regions of the semiconductor layer, including growing gate oxide on the amorphized underlayer, wherein the amorphized underlayer causes a differential in thickness in the gate oxide for forming the gate oxide of a first thickness on the non-amorphized region and of a second thickness greater than the first thickness on the amorphized region of the semiconductor layer to provide regions of the semiconductor layer adapted for different operating voltages.
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Abstract
Gate oxides having different thicknesses are grown on a semiconductor layer by the process which comprises forming a semiconductor layer on a substrate, growing an oxide layer on the semiconductor layer, exposing a selected area of the oxide layer, amorphizing the semiconductor layer underlying the exposed oxide layer, removing the oxide layer to expose the semiconductor layer having both amorphized and non-amorphized regions and growing gate oxide on the amorphized and non-amorphized regions of the semiconductor layer. Gate oxide grown on the amorphized regions will be thicker than gate oxide grown on the non-amorphized regions.
The process of the invention obviates the need for special integrated circuit manufacturing design modifications and can be utilized to fabricate a wide variety of devices, in particular, MOS-type devices.
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Citations
25 Claims
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1. A process for fabricating an integrated circuit comprising the steps of:
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(a) growing a semiconductor layer on a substrate; (b) forming an oxide layer upon the semiconductor layer; (c) amorphizing a selected area of the semiconductor layer to form an amorphized underlayer; (d) removing the oxide layer to expose the semiconductor layer having both amorphized and non-amorphized regions; (e) simultaneously growing gate oxide on the amorphized and non-amorphized regions of the semiconductor layer, including growing gate oxide on the amorphized underlayer, wherein the amorphized underlayer causes a differential in thickness in the gate oxide for forming the gate oxide of a first thickness on the non-amorphized region and of a second thickness greater than the first thickness on the amorphized region of the semiconductor layer to provide regions of the semiconductor layer adapted for different operating voltages. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification