Process for forming a semiconductor device with an antireflective layer

• US 5,918,147 A
• Filed: 03/29/1995
• Issued: 06/29/1999
• Est. Priority Date: 03/29/1995
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Lin, Jung-Hui, Paulson, Wayne M., White, Ted R., Roman, Bernard J., Filipiak, Stanley M., Ong, T. P.
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): WHIPPLE, MATTHEW LAVERNE
• Application Number:
  US08/413,021
• Time in Patent Office: 1,553 Days
• Field of Search: 438/636, 438/785, 438/786, 438/791, 438/792, 438/793, 438/794
• US Class Current: 438/636
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/32133 by chemical means only

Abstract

Antireflective layers (54, 86, and 109) have been developed that have discrete portions (541, 542, 861, 862, 863, 1091, and 1092). The discrete portions (541, 542, 861, 862, 863, 1091, and 1092) allow the antireflective layers (54, 86, and 109) to be used in many instances where using a single layer of uniform composition would be difficult or impossible. Alternatively, a single antireflective layer with a continuously graded composition can be used.

Claims

1. A process for forming a semiconductor device comprising the steps of:

forming a first layer over a semiconductor substrate, wherein the first layer is conductive;

forming an antireflective layer over the first layer, wherein;

the antireflective layer includes a first location, a second location, and a third location lying between the first and second locations, wherein the third location has a higher absorption coefficient compared to each of the first and second locations;

the first location includes a first element and nitrogen;

the second location includes a second element and nitrogen;

the antireflective layer has a first nitrogen content at a first portion that includes the first location and a second nitrogen content at a second portion that includes the second location; and

the second nitrogen content is higher than the first nitrogen content;

patterning the first layer and the antireflective layer to form a first member including a remaining portion of the first layer, wherein the remaining portion of the first layer is at least part of a gate electrode, a contact structure, or an interconnect; and

forming a conductive member near the remaining portion of the first layer, wherein;

the conductive member abuts the antireflective layer; and

the conductive member is spaced apart from the remaining portion of the first layer.

2. The process of claim 1, wherein at least one of the first and second locations is nonstoichiometric.

3. The process of claim 1, wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

4. The process of claim 1, wherein:

the first location includes silicon-rich silicon nitride; and

the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

5. The process of claim 1, wherein:

the first layer includes a metal-containing layer; and

the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

6. The process of claim 1, further comprising a step of forming a second layer over and adjacent to the second location of the antireflective layer, wherein:

the first layer has a first refractive index;

the second layer has a second refractive index that is different from the first refractive index;

the first location has a third refractive index that is closer to the first refractive index compared to the second refractive index; and

the second location has a fourth refractive index that is closer to the second refractive index compared to the first refractive index.

7. The process of claim 1, further comprising a step of forming a second layer over and adjacent to the second location of the antireflective layer, wherein:

the first layer has a first refractive index;

the second layer has a second refractive index; and

the third location has a third refractive index that is higher than each of the first and second refractive indices.

8. The process of claim 1, wherein the antireflective layer is formed by a deposition selected from a group consisting of:

low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius;

plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and

sputter deposition.

9. The process of claim 1, further comprising a step of forming a passivation layer over the remaining portion of the first layer and the conductive member.

10. The process of claim 1, wherein the step of patterning is performed using a fluorine-containing gas.

11. The process of claim 1, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

12. The process of claim 1, further comprising a step of forming conductive members on at least portions of the antireflective layer.

13. The process of claim 1, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.

14. A process for forming a semiconductor device comprising the steps of:

forming a first layer over a semiconductor substrate, wherein the first layer is conductive;

forming an antireflective layer over the first layer, wherein;

the antireflective layer includes a first location and a second location;

the first location includes nitrogen and has a first parameter type with a first value;

the second location includes nitrogen and has the first parameter type with a second value;

the first parameter type is selected from a group consisting of refractive index and absorption coefficient; and

the first value is greater than the second value;

patterning the first layer and the antireflective layer to form a first member including a remaining portion of the first layer, wherein the remaining portion of the first layer is at least part of a gate electrode, a contact structure, or an interconnect;

forming a second layer over and adjacent to the second location of the antireflective layer, wherein;

the first layer has a third value of the first parameter type;

the second layer has a fourth value of the first parameter type that is different from the third value;

the first value is closer to the third value compared to the fourth value; and

the second value is closer to the fourth value compared to the third value; and

forming a conductive member near the remaining portion of the first layer, wherein;

the conductive member abuts the antireflective layer; and

the conductive member is spaced apart from the remaining portion of the first layer.

15. The process of claim 14, wherein:

the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location;

the third location has a fifth value of the first parameter type; and

the second value is higher than each of the first, third, fourth, and fifth values.

16. The process of claim 14, wherein the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location, wherein:

the third location has a fifth value of the first parameter type; and

the second value is higher than each of the first and fifth values.

17. The process of claim 14, wherein the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location, wherein;

the first location has a first value of a second parameter type;

the second location has a second value of the second parameter type;

the third location has a third value of the second parameter type;

the second parameter type is different from the first parameter type;

the second parameter type is selected from a group consisting of refractive index and absorption coefficient; and

the second value of the second parameter type is higher than each of the first and third values of the second parameter type.

18. The process of claim 14, wherein the step of forming the antireflective layer is performed such that:

the first location further includes a first element that is different from nitrogen;

the second location further includes a second element that is different from nitrogen; and

the first and second locations have different compositions.

19. The process of claim 18 wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

20. The process of claim 18, wherein the step of forming the antireflective layer is performed such that at least one of the first and second locations is nonstoichiometric.

21. The process of claim 18, wherein:

the first location includes silicon-rich silicon nitride; and

the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

22. The process of claim 21, wherein:

the first layer includes a metal-containing layer; and

the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

23. The process of claim 14, further comprising a step of forming a passivation layer over the remaining portion of the first layer and the conductive member.

24. The process of claim 14, wherein the step of patterning is performed using a fluorine-containing gas.

25. The process of claim 14, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

26. The process of claim 14, wherein the antireflective layer is formed by a deposition selected from a group consisting of:

low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius;

plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and

sputter deposition.

27. The process of claim 14, further comprising a step of forming conductive members on at least portions of the antireflective layer.

28. The process of claim 14, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.

29. A process for forming a semiconductor device comprising the steps of:

forming a metal-containing layer over a semiconductor substrate; and

forming an antireflective layer over the metal-containing layer, wherein;

the antireflective layer includes a first location and a second location;

the first location includes a first element and nitrogen;

the second location includes a second element and nitrogen;

the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten; and

the first and second locations have different compositions.

30. A process for forming a semiconductor device comprising the steps of:

forming a first layer over a semiconductor substrate, wherein the first layer has a first absorption coefficient and a first refractive index;

forming an antireflective layer over the first layer, wherein;

the antireflective layer includes a first location and a second location that overlies the first location;

the first location has a second absorption coefficient and a second refractive index, wherein the second absorption coefficient is different from the first absorption coefficient, and the second refractive index is different from the first refractive index; and

the second location has a third absorption coefficient and a third refractive index; and

forming a second layer over the antireflective layer, wherein the second layer has a fourth absorption coefficient and a fourth refractive index, and wherein, the fourth absorption coefficient is different from the third absorption coefficient, and the fourth refractive index is different from the third refractive index,

wherein the semiconductor device has a characteristic selected from a group consisting of;

(a) the second refractive index is closer to the first refractive index compared to the fourth refractive index; and

the third refractive index is closer to the fourth refractive index compared to the first refractive index; and

(b) the second absorption coefficient is closer to the first absorption coefficient compared to the fourth absorption coefficient; and

the third absorption coefficient is closer to the fourth absorption coefficient compared to the first absorption coefficient.

31. The process of claim 30, wherein:

the step of forming the antireflective layer is performed such that the antireflective layer includes a third location lying between the first and second locations;

the third location has a value of a parameter type selected from a group consisting of refractive index and absorption coefficient; and

the value of the parameter type for the third location is higher than each of the first, second, third and fourth refractive indices or the first, second, third, and fourth absorption coefficient, as appropriate.

32. The process of claim 30, wherein:

the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location;

the value at the third location, wherein the value has a parameter type selected from a group consisting of refractive index and absorption coefficient; and

the value of the parameter type for the third location is lower than the second refractive index or second absorption coefficient, as appropriate.

33. The process of claim 30, wherein the step of forming the antireflective layer is performed such that:

the first location further includes a first element that is different from nitrogen;

the second location further includes a second element that is different from nitrogen; and

the first and second locations have different compositions.

34. The process of claim 33, wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

35. The process of claim 33, wherein the step of forming the antireflective layer is performed such that at least one of the first and second locations is nonstoichiometric.

36. The process of claim 33, wherein:

the first location includes silicon-rich silicon nitride; and

the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

37. The process of claim 33, wherein:

the first layer includes a metal-containing layer; and

the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

38. The process of claim 30, wherein the antireflective layer is formed by a deposition selected from a group consisting of:

low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius;

plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and

sputter deposition.

39. The process of claim 30, further comprising a step of forming a passivation layer over the second layer.

40. The process of claim 30, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

41. The process of claim 30, further comprising a step of forming conductive members on the antireflective layer.

42. The process of claim 30, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.