Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature

• US 5,919,305 A
• Filed: 07/02/1998
• Issued: 07/06/1999
• Est. Priority Date: 07/03/1997
• Status: Expired due to Fees

• Current Assignee: CBL Technologies Incorporated
• Original Assignee: CBL Technologies Incorporated
• Inventors: Solomon, Glenn S.
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US09/109,610
• Time in Patent Office: 369 Days
• Field of Search: 117/90, 117/94, 117/95, 117/101, 117/913, 117/915, 117/952, 117/954
• US Class Current: 117/90
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 29/48 AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
• CPC Class Codes: C30B 29/64 Flat crystals, e.g. plates, strips or discs
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: Y10S 117/913 Graphoepitaxy or surface modification to enhance epitaxy
• CPC Class Codes: Y10S 117/915 Separating from substrate

Abstract

A concept and process is disclosed by which an epitaxially deposited film is removed from its substrate at elevated temperatures to inhibit thermal mismatch strain induced defect generation in the epitaxial layer. The process occurs by gas phase reactions of an intermediate layer purposely deposited to react with a component in the gas stream during or after epitaxial growth. While the concept of an intermediate layer has been used extensively to improve the crystal quality of the epitaxial layer this is not the purpose of this interlayer. Although this interlayer may aid in nucleation of the epitaxial layer, the objective is to separate the epitaxial material on top of the interlayer from the substrate below the interlayer at or near the growth temperature to reduce the effects of the thermal mismatch between the substrate and epitaxial layers. An application is an addition to the above invention. A thick epitaxially deposited film can now be removed from its substrate at elevated temperatures. This epitaxial layer can now be cooled without defect generation due to the difference in the thermal expansion of the substrate and epitaxy. The epitaxial layer now becomes a substrate for either further epitaxial deposition or device fabrication.

Claims

1. A method for fabricating a thick layer of semiconductor material in a single growth apparatus, the method comprising:

depositing in the growth apparatus at a growth temperature using a chemical vapor deposition technique an epitaxial layer of the semiconductor material on an interlayer predeposited on a substrate, wherein the epitaxial layer and the substrate are thermally mismatched, and wherein the epitaxy comprises GaN, InN, AlN or alloys thereof;

removing in the growth apparatus substantially all of the interlayer at the growth temperature prior to cool down using a gas phase etching technique applied laterally to the interlayer so that the epitaxial layer is substantially separated from the substrate; and

cooling down the epitaxial layer and the substrate;

whereby a thick, high quality layer of semiconductor material having reduced thermal mismatch damage is produced.

2. The method of claim 1 wherein the substrate is silicon, sapphire, or silicon carbide.

3. The method of claim 1 wherein the interlayer is composed of silicon, silicon oxide, silicon nitride or silicon carbide.

4. The method of claim 1 wherein the interlayer is patterned such that the removing of the interlayer leaves the epitaxial layer and substrate attached at preselected regions.

5. The method of claim 1 wherein the interlayer is patterned such that portions of the substrate are exposed, and wherein the exposed portions of the substrate provide nucleation sites for the epitaxy.

6. The method of claim 1 wherein the semiconductor material is GaN or a related III-V, II-VI, or IV compound or alloy.

7. A layer of semiconductor material made according to the method of claim 1.

8. An apparatus for fabricating a thick layer of semiconductor material, the apparatus comprising:

means for depositing at a growth temperature in an upper region of the apparatus using a chemical vapor deposition technique an epitaxial layer of the semiconductor material on an interlayer predeposited on a substrate, wherein the epitaxial layer and the substrate are thermally mismatched;

means for removing in a lower region of the apparatus substantially all of the interlayer at the growth temperature using a gas phase etching technique so that the epitaxial layer is substantially separated from the substrate prior to cool down; and

means for substantially isolating the upper region from the lower region so that the chemical vapor deposition in the upper region is isolated from the gas phase etching in the lower region.