Plasma processing apparatus

• US 5,919,332 A
• Filed: 06/06/1996
• Issued: 07/06/1999
• Est. Priority Date: 06/07/1995
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nagaseki, Kazuya, Aoki, Makoto, Ogasawara, Masahiro, Tomoyoshi, Riki, Koshiishi, Akira, Hirose, Keizo
• Primary Examiner(s): Wortman, Donna C.
• Assistant Examiner(s): Brumback, Brenda G.
• Application Number:
  US08/659,387
• Time in Patent Office: 1,125 Days
• Field of Search: 156/345, 118/723 E, 216/71, 216/67, 216/68
• US Class Current: 156/345.47
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Abstract

A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.

Claims

1. A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein

an upper insulating member is provided around the upper electrode, an outer lower end portion of the upper insulating member is positioned outside an outer circumference of the lower electrode, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than an upper surface of the substrate, and the narrowest distance between the upper insulating layer and the lower electrode is smaller than a distance between the upper and lower electrodes.

2. An apparatus according to claim 1, wherein a lower insulating member is provided around the lower electrode, that the outer lower end portion of the upper insulating member is positioned outside the outer circumference of the lower insulating member, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than the upper surface of the substrate, and the narrowest distance between the upper and lower insulating members is smaller than the distance between the upper and lower electrodes.

3. An apparatus according to claim 2, wherein said lower insulating member has an upper outer end surface which is inclined downward.

4. An apparatus according to claim 3 wherein said upper insulating member has a lower outer end surface which is inclined downward.

5. An apparatus according to claim 1, wherein the upper insulating member is provided with a plasma monitor window.

6. An apparatus according to claim 1, wherein the lower surface of the upper insulating member is provided with a notch portion used for monitoring a plasma.

7. An apparatus according to claim 1, wherein the lower surface of the upper insulating member is formed of consecutive surfaces having no gaps.

8. An apparatus according to claim 1, wherein a grounded electrode is provided around the lower electrode.

9. An apparatus according to claim 1, wherein the lower insulating member is a focus ring for increasing the incident efficiency of a plasma into the substrate.

10. A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein

an upper insulating member is provided in the periphery of the upper electrode, a first ring-like member made of semiconductor material and a second ring-like member made of insulating material and positioned on an outer circumference of the first ring-like member are provided in the periphery of the lower electrode, the narrowest distance between an extended portion of the upper instulating member which is downward extended from an inner circumference thereof and the second ring-like member is smaller than a distance between the upper and lower electrodes, and the inner circumferential edge of the upper insulating member is arranged so as to correspond to a position between inner and outer circumferential edges of the second ring-like member.

11. An apparatus according to claim 10, wherein the first and second ring-like members are focus rings for increasing an incident efficiency of a plasma into the substrate.

12. An apparatus according to claim 10, wherein said first and ring-like members are partially overlapped with each other to form an overlapped area, and said extended portion has a lower face facing the overlapped area.

13. A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein

a conductive member having a high heat conductivity is embedded inside an insulating member positioned at an peripheral portion of at least one of the upper and lower electrodes.

14. An apparatus according to claim 13, wherein said insulating member is positioned at the peripheral portion of the upper electrode and a vacuum layer is formed on an upper side of the conductive member.

15. An apparatus according to claim 13, wherein the conductive member is formed of a kind of material selected from a group of aluminum, poly-crystal silicon, and boron nitride.