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Plasma processing apparatus

  • US 5,919,332 A
  • Filed: 06/06/1996
  • Issued: 07/06/1999
  • Est. Priority Date: 06/07/1995
  • Status: Expired due to Term
First Claim
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1. A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, whereinan upper insulating member is provided around the upper electrode, an outer lower end portion of the upper insulating member is positioned outside an outer circumference of the lower electrode, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than an upper surface of the substrate, and the narrowest distance between the upper insulating layer and the lower electrode is smaller than a distance between the upper and lower electrodes.

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