Light emitting device

• US 5,920,086 A
• Filed: 11/19/1997
• Issued: 07/06/1999
• Est. Priority Date: 11/19/1997
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Misewich, James Anthony, Sethi, Sanjay, MacFarlane, Roger Morton, Tiwari, Sandip
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): BAUMEISTER, BRADLEY W
• Application Number:
  US08/972,980
• Time in Patent Office: 594 Days
• Field of Search: 257/59, 257/76, 257/79, 257/200, 257/201, 257/613, 257/80, 257/82, 257/83, 257/86, 257/94, 257/96
• US Class Current: 257/103
• CPC Class Codes: H01L 33/26 Materials of the light emitting region

Abstract

A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with first and second electrodes, which emits radiant energy upon activation. This material is a rare earth metal oxide or a rare earth metal halide.

Claims

1. A device for generating radiant energy comprising a first electrode;

a second electrode spaced apart from said first electrode;

a light-emitting material disposed between and in electrical communication with said first and second electrodes, wherein said light-emitting material is a rare earth metal oxide or a rare earth metal halide.

2. A device in accordance with claim 1 wherein said rare earth metal of said rare earth metal oxide or said rare earth metal halide is selected from the group consisting of erbium, samarium, europium, terbium, ytterbium, neodymium and the gadolinium.

3. A device in accordance with claim 2 wherein said rare earth metal of said rare earth metal oxide or said rare earth metal halide is erbium.

4. A device in accordance with claim 1 wherein said light-emitting material is a rare earth metal halide wherein said halogen component of said halide is selected from the group consisting of fluorine, chlorine and iodine.

5. A device in accordance with claim 4 wherein said halogen of said rare earth metal halide is fluorine.

6. A device in accordance with claim 1 wherein said light-emitting material is erbium oxide having the formula Er₂ O₃.

7. A device in accordance with claim 1, wherein said material is erbium fluoride having the structural formula ErF₃.

8. A field effect transistor comprising a source region and a drain region formed in a semiconductor material;

a channel region disposed between said source region and said drain region at the surface of said semiconductor material;

a first electrode electrically connected to said source region;

a second electrode electrically connected to said drain region;

a light-emitting material disposed over said channel and situated between said first electrode and said second electrode; and

a gate electrode disposed over said second material, wherein said light-emitting material is a rare earth metal oxide or a rare earth metal halide.

9. A transistor in accordance with claim 8 wherein said rare earth metal of said rare earth metal oxide or said rare earth metal halide is selected from the group consisting of erbium, samarium, europium, terbium, ytterbium, neodymium and gadolinium.

10. A transistor in accordance with claim 9 wherein said rare earth metal is erbium.

11. A transistor in accordance with claim 8 wherein said light-emitting is a rare earth metal halide in which said halogen of said rare earth metal halide is selected from the group consisting of fluorine, chlorine and iodine.

12. A transistor in accordance with claim 11 wherein said halogen is fluorine.

13. A transistor in accordance with claim 8 wherein said light-emitting material is erbium oxide having the structural formula Er₂ O₃.

14. A transistor in accordance with claim 8 wherein said light-emitting material is erbium fluoride having a structural formula ErF₃.

15. A transistor in accordance with claim 8 wherein said gate electrode is transparent at the emission wavelength of the rare earth metal of said second material.

16. A transistor is accordance with claim 15 wherein said gate electrode is cadmium tin oxide.