Process for restoring rejected wafers in line for reuse as new

• US 5,920,764 A
• Filed: 09/30/1997
• Issued: 07/06/1999
• Est. Priority Date: 09/30/1997
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Huston, Hance H. III, Srikrishnan, Kris V., Hanson, David R.
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Zarneke, David A.
• Application Number:
  US08/940,723
• Time in Patent Office: 644 Days
• Field of Search: 438/4, 438/459, 438/460, 438/476, 438/928, 438/977, 438/959
• US Class Current: 438/4
• CPC Class Codes: H01L 21/02032 by reclaiming or re-processing
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/959 Mechanical polishing of wafer
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A process applicable to the restoration of defective or rejected semiconductor wafers to a defect-free form uses etchants and a variation of the Smart-Cut® process. Because of the use of the variation on the Smart-Cut® process, diffusion regions are removed without significantly affecting the specifications of the semiconductor wafer. Therefore, a defective or rejected wafer can be restored to near original condition for use in semiconductor manufacturing.

Claims

1. A method of forming a substrate portion comprising the steps of:

providing a wafer comprising a substrate, said substrate having at least one of a metal portion and an oxide portion and at least a diffusion region;

removing the at least one of the metal portion and the oxide portion;

implanting ions into said substrate to form a buried layer therein, said buried layer being deeper than said diffusion region;

heating said wafer to a temperature; and

separating said wafer along said buried layer to remove a top surface layer of said wafer,

whereby underlying portions of said wafer remain to form said substrate portion.

2. The method according to claim 1, further comprising the step of planarizing the wafer prior to the step of implanting ions.

3. The method according to claim 2, wherein the step of planarizing includes depositing a leveling layer.

4. The method according to claim 3, wherein said leveling layer comprises spin-on-glass.

5. The method according to claim 1, further comprising the step of polishing said substrate portion after the step of separating.

6. The method according to claim 1, wherein the step of removing the at least one of the metal portion and the oxide portion includes etching using at least one etchant.

7. The method according to claim 6, wherein said at least one etchant is selected from the group consisting of a buffered hydrofluoric solution and a phosphoric solution.

8. The method according to claim 1, wherein the step of separating includes ultrasonic agitation.

9. The method according to claim 1, wherein the substrate is silicon.

10. The method according to claim 9, wherein said ions comprise hydrogen ions such that said buried layer is comprised of hydrogen and silicon.

11. The method according to claim 10, wherein said hydrogen ions are implanted at a dose in the range between about 2×

10¹⁶ and 10¹⁷ ions/cm² with an energy in the range between 150 and 200 KeV.

12. The method according to claim 1, wherein said step of heating includes annealing at a range between about 400 and 600°

C., for a time in the range between about 30 and 120 minutes.

13. The method according to claim 1, wherein said buried layer is formed at a depth between 1 and 2 μ

m beneath the top surface of said wafer.

14. A method of forming a semiconductor substrate portion upon which semiconductor structures can be subsequently formed, comprising the steps of:

providing a wafer comprising a semiconductor substrate, said semiconductor substrate having at least one of a metal portion and an oxide portion and at least a diffusion region;

removing the at least one of the metal portion and the oxide portion;

planarizing the semiconductor wafer;

implanting hydrogen ions into said semiconductor substrate to form a buried layer therein, said buried layer being deeper than said diffusion region;

heating said wafer to a temperature;

separating said wafer along said buried layer to remove a top surface layer of said wafer; and

polishing said semiconductor substrate portion after the step of separating,

whereby underlying portions of said wafer remain to form said semiconductor substrate portion.