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Red and blue stacked laser diode array by wafer fusion

  • US 5,920,766 A
  • Filed: 01/07/1998
  • Issued: 07/06/1999
  • Est. Priority Date: 01/07/1998
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a monolithic integrated edge-emitting semiconductor laser structure comprising the steps of:

  • fabricating an inverted first laser structure for emitting light of a first wavelength, said inverted first laser structure having a fusion layer as the uppermost semiconductor layer,fabricating a second laser structure for emitting light of a second wavelength,wafer fusing said fusion layer of said inverted first laser structure to the uppermost semiconductor layer of said second laser structure, andforming contacts which enable independently addressable biasing of said first laser structure to emit light of said first wavelength and said second laser structure to emit light of said second wavelength.

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