Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
First Claim
1. An electronic component comprising a dielectric material, wherein the dielectric material is a metal oxide of a group III metal or group VB metal that is doped with at least one group IV element, wherein the Groups are from groups of the Mendeleef Periodic Table, and wherein the dielectric material is about 0.1 weight percent to about 30 weight percent dopant.
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Abstract
A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al2 O3, Y2 O3, Ta2 O5 or V2 O5) and the metal dopant is a Group IV material (Zr, Si, Ti, and Hf). The metal oxide contains about 0.1 weight percent to about 30 weight percent of the dopant. The doped, metal oxide dielectric of the present invention is used in a number of different electronic components and devices. For example, the doped, metal oxide dielectric is used as the gate dielectric for MOS devices. The doped, metal oxide dielectric is also used as the inter-poly dielectric material for flash memory devices.
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Citations
10 Claims
- 1. An electronic component comprising a dielectric material, wherein the dielectric material is a metal oxide of a group III metal or group VB metal that is doped with at least one group IV element, wherein the Groups are from groups of the Mendeleef Periodic Table, and wherein the dielectric material is about 0.1 weight percent to about 30 weight percent dopant.
Specification