Semiconductor device for heat discharge

• US 5,923,084 A
• Filed: 06/05/1996
• Issued: 07/13/1999
• Est. Priority Date: 06/06/1995
• Status: Expired due to Term

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Nakamura, Norio, Yamashita, Hiroyuki, Inoue, Kazuaki, Yoda, Hiroyuki
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Kelley, Nathan K.
• Application Number:
  US08/658,539
• Time in Patent Office: 1,133 Days
• Field of Search: 257/212, 257/717, 257/720, 257/713, 257/723, 257/701, 257/730
• US Class Current: 257/712
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/42 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/1433 Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H05K 1/0206 : by printed thermal vias

Abstract

A semiconductor device comprising a low-heat-resistance heat discharging route suitable for small semiconductor devices, such as an IC card, is disclosed. Heat arising from electronic parts is efficiently dispersed to the outside, thereby accomplishing a decrease in size and a heightening of function. In a specific embodiment, a CPU is mounted on a substrate in a position of thermal via holes. A high-heat-conducting material such as semifluid silicone rubber is placed between a CPU mounting face of the substrate and lower panel located on the opposite side of the substrate. The high-heat-conducting material is a filler having the ability to change shape and the property of electrical nonconductivity. A greater part of the heat arising from the CPU is transmitted through the thermal via holes from the CPU mounting face of the substrate to the opposite side, and further to the high-heat-conducting material which conveys the heat to the lower panel. The heat is dispersed from the lower panel surface directly into the atmosphere.

Claims

1. A semiconductor device, comprising;

a substrate including a plurality of layers, an inner portion having at least one inner layer, a concave area exposing an inner ground layer of the substrate, a first side and a second side opposing the first side;

a plurality of vacant thermal via holes formed in the inner ground layer of the substrate, the thermal via holes intersecting a conductor pattern of at least one layer of the substrate;

an electronic component mounted over the thermal via holes on the first side of the substrate;

a bonding agent attaching the electronic component to a surface of the inner ground layer;

a heat discharging element disposed on the second side of the substrate; and

a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.

2. The semiconductor device of claim 1, wherein the electronic component comprises a semiconductor chip that is surface-mounted on the substrate using a bonding agent.

3. The semiconductor device of claim 1, wherein the high heat conductive material is an electrical insulator.

4. The semiconductor device of claim 3, wherein the high heat conductive material comprises a semi-fluid silicone rubber.

5. The semiconductor device of claim 1, wherein the high heat conductive material is formed in the shape of a sheet.

6. The semiconductor device of claim 1, wherein the high heat conductive material is laminated to opposite sides of a metallic substrate.

7. The semiconductor device of claim 6, wherein the high heat conductive material is an electrical insulator.

8. The semiconductor device of claim 1, wherein the heat discharging element comprises an integrally formed protruding part located adjacent the substrate, and the high heat conductive material is located between the protruding part and the substrate.

9. The semiconductor device of claim 8, wherein the substrate is attached to the protruding part of the heat discharging element.

10. The semiconductor device of claim 1, wherein signal lines of the electronic component are attached to the first side of the substrate, and at least one of a ground layer and an electric power supply layer are installed in the inner portion, the at least one of the ground layer and the electric power supply layer forming at least one layer of the inner portion.

11. The semiconductor device of claim 10, wherein the electronic component comprises a CPU, and an ASIC mounted on the first side of the substrate, and signal lines that connect the CPU to the ASIC.

12. The semiconductor device of claim 1, wherein the bonding agent is between the electronic component and the substrate.

13. The semiconductor device of claim 1, wherein the heat discharging element is a metallic art that forms a portion of a case for the substrate.

14. The semiconductor device of claim 1, wherein the heat discharging element has integrally formed concave and convex areas on a surface of the heat discharging element opposite the substrate.

15. The semiconductor device of claim 13, wherein the case comprises a box in the shape of a thin card, the box comprising a frame and a set of metallic upper and lower panels surrounding the substrate, and the heat discharging element forming one of the upper and lower panels.

16. The semiconductor device of claim 13, wherein the high heat conductive material is located between the electronic component and the case on the first side of the substrate.

17. The semiconductor device of claim 1, wherein an internal circumferential surface of the thermal via holes is metal plated, and the metal plated thermal via holes passing through the substrate.

18. The semiconductor apparatus of claim 3, wherein the high heat conductive material is flexible.

19. A semiconductor device, comprising:

a substrate having a first side and a second side opposing the first side;

a plurality of vacant thermal via holes formed in the substrate;

an electronic component mounted over the thermal via holes on the first side of the substrate;

a heat discharging element disposed on the second side of the substrate;

a metallic substrate disposed between the substrate and the heat discharging element; and

a high heat conductive material laminated to opposite sides of the metallic substrate, the high heat conductive material being located (i) between the substrate and the metallic substrate and adjacent the thermal via holes, and (ii) between the metallic substrate and the heat discharging element.

20. The semiconductor device of claim 19, wherein the electronic component comprises a semiconductor chip that is surface-mounted on the substrate using a bonding agent.

21. The semiconductor device of claim 19, wherein the high heat conductive material is an electrical insulator.

22. The semiconductor device of claim 21, wherein the high heat conductive material comprises a semi-fluid silicone rubber.

23. The semiconductor device of claim 19, wherein the high heat conductive material is formed in the shape of a sheet.

24. The semiconductor device of claim 19, wherein the heat discharging element comprises an integrally formed protruding part located adjacent the substrate, and the high heat conductive material is located between the protruding part and the substrate.

25. The semiconductor device of claim 24, wherein the substrate is attached to the protruding part of the beat discharging element.

26. The semiconductor device of claim 19, wherein the substrate comprises multiple layers and an inner portion having at least one inner layer, and the thermal via holes intersect a conductor pattern of at least one inner layer.

27. The semiconductor device of claim 26, wherein signal lines of the electronic component are attached to the first side of the substrate, at least one of a ground layer and an electric power supply layer are installed in the inner portion, the at least one of the ground layer and the electric power supply layer forming at least one layer of the inner portion.

28. The semiconductor device of claim 27, wherein the electric component comprises a CPU, an ASIC mounted on the first side of the substrate, and signal lines connecting the CPU to the ASIC.

29. The semiconductor device of claim 19, wherein the heat discharging element is a metallic part that forms a portion of a case for the substrate.

30. The semiconductor device of claim 19, wherein the heat discharging element includes integrally formed concave and convex areas on a surface of the heat discharging element opposite the substrate.

31. The semiconductor device of claim 29, wherein the case comprises a box in the shape of a thin card, the box including a frame and a set of metallic upper and lower panels surrounding the substrate, and the heat discharging element forms one of the upper and lower panels.

32. The semiconductor device of claim 29, further comprising high heat conductive material located between the electronic component and the case on the first surface of the substrate.

33. The semiconductor device of claim 19, wherein an internal circumferential surface of the thermal via holes is metal plated, and the metal plated thermal via holes pass through the substrate.

34. The semiconductor apparatus of claim 21, wherein the high heat conductive material is flexible.

35. A semiconductor device, comprising:

a substrate including a first side, a second side opposing the first side, multiple layers, at least one layer being a ground layer disposed inside a concave area at the first side;

a plurality of vacant thermal via holes formed in the substrate and being electrically connected to the ground layer;

an electronic component mounted on the ground layer inside of the concave area of the substrate and over the thermal via holes;

a heat discharging element disposed on the second side of the substrate, the heat discharging element including a protruding part; and

a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.

36. The semiconductor device of claim 35, wherein a portion of the ground layer is positioned in a side surface of the concave area.

37. A semiconductor device, comprising:

a substrate having a first side and a second side opposing the first side;

a plurality of vacant thermal via holes formed in the substrate;

a semiconductor chip surface-mounted on the first side of the substrate over the thermal via holes by a bonding agent, the semiconductor chip being sealed by a resin having a surface;

a first heat discharging element disposed on the first side of the substrate;

a second heat discharging element disposed on the second side of the substrate; and

a high heat conductive material located (i) between the second heat discharging element and the substrate and adjacent the thermal via holes, and (ii) between the surface of the resin and the first heat discharging element.

38. The semiconductor device of claim 37, wherein the bonding agent is silver paste.

39. The semiconductor device of claim 37, wherein the semiconductor chip is a CPU.

40. A semiconductor device, comprising:

a substrate including a first side and a second side opposing the first side;

a plurality of vacant thermal via holes formed in the substrate;

a first electronic component mounted over the thermal via holes on the first surface of the substrate;

a second electronic component mounted on the second side of the substrate;

a heat discharging element disposed on the second side of the substrate, the heat discharging element comprises an integrally formed protruding part on the second side of the substrate; and

a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.

41. The semiconductor device of claim 40, wherein the protruding part is positioned substantially facing the first electronic component mounted on the first side of the substrate.

42. A semiconductor device, comprising:

a substrate including first side and a second side opposing the first side;

a plurality of thermal via holes formed in the substrate, the thermal via holes being vacant;

a first electronic component mounted over the thermal via holes on the first surface of the substrate;

a second electronic component mounted on the second side of the substrate;

a heat discharging element disposed on the second side of the substrate, the heat discharging element including an integrally formed protruding part attached to the substrate, a depression on a side of the heat discharging element facing away from the second side of the substrate, and a heat radiating fin integrally formed in the depression; and

a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.

43. The semiconductor device of claim 42, wherein a distal end of the heat radiating fin and a surface of the heat discharging element are disposed in a common plane.