IGBT module construction

• US 5,923,085 A
• Filed: 10/09/1997
• Issued: 07/13/1999
• Est. Priority Date: 05/02/1996
• Status: Expired due to Term

• Current Assignee: FCA US LLC (Stellantis NV)
• Original Assignee: Chrysler Corporation (Stellantis NV)
• Inventors: Millas, Gary P., Salter, Richard T. II, Donegan, Kevin J., Colello, Gary M.
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/948,533
• Time in Patent Office: 642 Days
• Field of Search: 257/712, 257/724, 257/713, 257/723, 257/708, 257/701, 257/566, 257/930
• US Class Current: 257/712
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/112 Mixed assemblies
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: Y02T 10/62 Hybrid vehicles

Abstract

A hybrid vehicle includes a power unit communicating power between a turbine alternator, flywheel and traction motor. The power unit stores DC power in capacitors and places the power on a DC bus for use in driving the induction machines. Power transistors receive the DC power from the DC bus and are pulse width modulated to output a synthesized AC waveform. The power transistors include a support plate of thermally conductive material having a first surface supporting the transistor and a second surface forming a heat sink with cooling fluid. An electrical insulation layer is fixedly connected between the power transistor and the support plate on the first surface.

Claims

1. A power transistor assembly comprising:

at least one power transistor;

a support plate of thermally conductive material having a first surface supporting said at least one power transistor and a second surface having a plurality of cooling fins extending outwardly in direct contact with cooling fluid;

an electrical insulation layer fixedly connected between said power transistor and said support plate on said first surface; and

a plurality of contact pads supported by said support plate and electrically connected to said power transistor, said contact pads being formed of resilient strip of material with a bend formed therein to allow connection to external members of varying distances from said support plate.

2. A power transistor assembly as set forth in claim 1 wherein said insulation layer is comprised of a thermally conductive substrate.

3. A power transistor assembly as set forth in claim 2 wherein said insulation layer includes said thermally conductive substrate and copper layers fixedly connected on opposing sides of said thermally conductive substrate.

4. A power transistor assembly as set forth in claim 3 wherein said insulation layer is soldered to said support plate.

5. A power transistor assembly as set forth in claim 4 wherein said support plate comprises aluminum filled silicon carbide.

6. A power transistor assembly as set forth in claim 4 wherein at least one of said contact pads is connected to a collector of said transistor, and including contact leads extending from said contact pad to said copper layer.

7. A power transistor assembly as set forth in claim 6 wherein at least one of said contact pads is connected to an emitter of said transistor, said transistor connected by electrical leads to said contact pads.

8. A power transistor assembly as set forth in claim 6 wherein said transistors comprise insulated gate bipolar transistors, each of said bipolar transistors having an emitter and a collector with a free wheeling diode connected across said emitter and said collector.

9. A power transistor assembly comprising:

at least one power transistor;

an integral support plate of thermally conductive material having a first surface supporting said at least one power transistor and a second surface having a plurality of integral cooling fins extending outwardly in direct contact with cooling fluid;

an electrical insulation layer fixedly connected between said power transistor and said support plate on said first surface, said electrical insulation layer directly contacting said power transistor for heat transfer.