Liquid crystal display with high aperture ratio and method for manufacturing the same

• US 5,923,390 A
• Filed: 06/25/1998
• Issued: 07/13/1999
• Est. Priority Date: 06/26/1997
• Status: Expired due to Term

• Current Assignee: BOE HYDIS Technology Company Limited (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Deuk Su, Lee, Bong Yeol, Ryu, Jung Mok, Jun
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): CHOWDHURY, TARIFUR RASHID
• Application Number:
  US09/104,471
• Time in Patent Office: 383 Days
• Field of Search: 349/147, 349/38, 349/42, 349/43
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

A liquid crystal display comprising: a transparent insulating substrate; a plurality of gate bus lines and a plurality of data bus lines arranged normal to the plurality of gate bus lines on the transparent insulating substrate, wherein a unit pixel region is defined by a region bounded by a pair of gate bus lines and a pair of data bus lines; a first electrode arranged parallel to the gate bus line within the unit pixel region; a first insulating layer formed on the first electrode; a second electrode formed at a selected portion of upper surface of the first insulating layer; a first transparent electrode formed within the unit pixel region, the first transparent electrode being apart by a selected distance from the second electrode, and being in contact with the first electrode; a second insulating layer formed on upper surface of the first insulating layer including the first transparent electrode and the second electrode; a second transparent electrode formed on the second insulating layer, the second transparent electrode being overlapped partially with the pair of gate bus lines and the pair of data bus lines, and being in contact with the second electrode through the second insulating layer; and a switching element electrically connected with the second transparent electrode.

Claims

1. A liquid crystal display comprising:

a transparent insulating substrate;

a plurality of gate bus lines and a plurality of data bus lines arranged normal to said plurality of gate bus lines on the transparent insulating substrate, wherein a unit pixel region is defined by a region bounded by a pair of gate bus lines and a pair of data bus lines;

a first electrode arranged parallel to said pair of gate bus line within said unit pixel region;

a first insulating layer formed on said first electrode;

a second electrode formed at a selected portion of an upper surface of said first insulating layer;

a first transparent electrode formed within said unit pixel region, said first transparent electrode being apart by a selected distance from said second electrode, and being in contact with said first electrode;

a second insulating layer formed on an upper surface of said first insulating layer including said first transparent electrode and said second electrode;

a second transparent electrode formed on said second insulating layer, said second transparent electrode being overlapped partially with the pair of gate bus lines and the pair of data bus lines, and being in contact with said second electrode through said second insulating layer; and

a switching element electrically connected with said second transparent electrode.

2. The liquid crystal display in claim 1, wherein said first and second transparent electrode is made of same material.

3. The liquid crystal display in claim 2, wherein the first and second transparent electrode is indium tin oxide.

4. The liquid crystal display in claim 1, wherein said first electrode is made of a material same as said data bus line.

5. The liquid crystal display in claim 1, wherein said transparent insulating substrate is a glass substrate.

6. The liquid crystal display in claim 1, wherein said switching element is a thin film transistor.

7. The liquid crystal display in claim 1, wherein said second insulating layer is smaller in dielectric constant than said first insulating layer.

8. The liquid crystal display in claim 7, wherein said second insulating layer is dielectric having a dielectric constant of about 2.5 to about 3.6.

9. A liquid crystal display with high aperture ratio comprising:

a transparent insulating substrate;

a plurality of gate bus lines and a plurality of data bus lines arranged normal to said plurality of gate bus lines on the transparent insulating substrate, wherein a unit pixel region is defined by a region bounded by a pair of gate bus lines and a pair of data bus lines;

a first electrode arranged parallel to said pair of gate bus line within said unit pixel region, said first electrode comprising a first portion with a first width and a second portion with a second width which is greater than said first width;

a first insulating layer formed on said first electrode;

a second electrode formed at a selected portion of an upper surface of said first insulating layer;

a first transparent electrode formed within said unit pixel region, said first transparent electrode being apart by a selected distance from said second electrode, and being in contact with said first electrode;

a second insulating layer formed on an upper surface of said first insulating layer including said first transparent electrode and said second electrode;

a second transparent electrode formed on said second insulating layer, said second transparent electrode being overlapped partially with the pair of gate bus lines and the pair of data bus lines, and being in contact with said second electrode through said second insulating layer; and

a switching element electrically connected with said second transparent electrode.

10. The liquid crystal display in claim 9, wherein said first and second transparent electrode is made of same material.

11. The liquid crystal display in claim 10, wherein the first and second transparent electrode is indium tin oxide.

12. The liquid crystal display in claim 10, wherein said second insulating layer is smaller in dielectric constant than said first insulating layer.

13. The liquid crystal display in claim 12, said second insulating layer is dielectric having a dielectric constant of about 2.5 to about 3.6.

14. The liquid crystal display in claim 13, wherein said second insulating layer is a photoresist film.

15. The liquid crystal display in claim 14, wherein said photoresist film has a thickness of about 1 μ

m to about 3 μ

m.

16. The liquid crystal display in claim 9, wherein said transparent insulating substrate is a glass substrate.

17. The liquid crystal display in claim 9, wherein said switching element is a thin film transistor.

18. The liquid crystal display in claim 9, wherein said second portion of the first electrode is a quadrangle plate.

19. The liquid crystal display in claim 18, wherein said second electrode is smaller in area than said first electrode, and is disposed within said first electrode.

20. A method for manufacturing a liquid crystal display comprising a first capacitor formed by double layer structured transparent pixel electrodes formed on a transparent insulating substrate;

and a second capacitor formed by double layer structured first and second electrodes, said first and second capacitors being electrically connected with a thin film transistor comprising source, drain, and gate electrodes, the method comprising the steps of;

forming a first electrode, a gate bus line, and a gate electrode on a transparent insulating substrate, the first electrode being arranged parallel to said gate bus line, a first interval apart from said gate bus line;

forming a first insulating layer on a first resultant substrate including said gate bus line and said first electrode;

forming a semiconductor layer on a selected portion of an upper surface of said first insulating layer over said gate electrode;

forming a first through hole in said first insulating layer such that a selected portion of said first electrode underlying said first insulating layer is exposed;

forming a first transparent electrode in contact with said first electrode through said first through hole on said first insulating layer;

simultaneously forming a second electrode, a data bus line orthogonal to said gate bus line, and being apart from said first transparent electrode, and source and drain electrodes apart from each other on said selected portions of said upper surface of said first insulating layer;

forming a second insulating layer on a second resultant substrate including at least said drain electrode and said second electrode;

forming a second through hole exposing a selected portion of said drain electrode, and a third through hole exposing a selected portion of said second electrode in said second insulating layer; and

forming a second transparent electrode in contact with said drain electrode through said second through hole and said second electrode through said third through hole on said second insulating layer, wherein said second transparent electrode is partially overlapped with said gate bus line and said data bus line.

21. The method in claim 20, wherein said second insulating layer is smaller in dielectric constant than said first insulating layer.

22. The method in claim 20, wherein said second insulating layer has a dielectric constant of about 2.5 to about 3.6.

23. The method in claim 20, wherein said second insulating layer is formed by spin-coating a photoresist film at a thickness of about 1-3 μ

m.

24. The method in claim 20, wherein said first electrode is same material with said first and second transparent electrodes.

25. The method in claim 24, wherein said first electrode, said first and second transparent electrodes are made of indium tin oxide.