Current-mediated active-pixel image sensing device with current reset

• US 5,923,794 A
• Filed: 02/06/1996
• Issued: 07/13/1999
• Est. Priority Date: 02/06/1996
• Status: Expired due to Term

• Current Assignee: Hanger Solutions, LLC (IP Investments Group LLC)
• Original Assignee: Polaroid Corporation (PLR IP Holdings LLC)
• Inventors: Kearney, Adolphus, Dron, Lisa G., McGrath, R. Daniel, Clark, Vincent S., Toker, James R.
• Primary Examiner(s): Moore, David K.
• Assistant Examiner(s): DO, ANH HONG
• Application Number:
  US08/595,981
• Time in Patent Office: 1,253 Days
• Field of Search: 382/312, 340/825.91, 257/65, 257/66, 257/291, 257/292, 327/514, 250/370.01
• US Class Current: 382/312
• CPC Class Codes: H04N 25/65 applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
• CPC Class Codes: H04N 25/677 for reducing the column or line fixed pattern noise
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

An image sensing device comprising active pixels is disclosed, each pixel having a charge accumulation region for collecting charges generated by a photosensitive element such as a photodiode. Fixed pattern noise is minimized by utilizing a reference current to reset the pixels and to generate an output current signal.

Claims

1. An image sensing device for receiving incident optical radiation and converting an external reference current into a current signal output related to the amount of radiation received, said device comprising:

a pixel comprising;

a photosensitive element for receiving the optical radiation and generating charge carriers of one polarity in proportion to the quantity of radiation acquired;

charge accumulation means, connected to said photosensitive element, for accumulating the charge carriers generated by said photosensitive element;

reset switching means comprising two terminals, one reset switching means terminal connected to said photosensitive element and the other reset switching terminal connected to said charge accumulation means; and

select switching means connected to said charge accumulation means;

a reference current mirror connected to the external reference current; and

reference switching means, disposed between said select switching means and said reference current mirror, for providing the reference current to said pixel such that the current signal output is produced.

2. The image sensing device of claim 1 wherein said reference current mirror comprises an input reference mirror section, for receiving the reference current, and an output reference mirror section.

3. The image sensing device of claim 2 wherein said input reference mirror section comprises at least one MOSFET.

4. The image sensing device of claim 2 wherein said output reference mirror section comprises at least one MOSFET.

5. The image sensing device of claim 1 further comprising at least one output current mirror and at least one signal switching means, said signal switching means disposed between said select switching means and said output current mirror.

6. The image sensing device of claim 5 wherein said output current mirror comprises at least two MOSFET devices.

7. A method of sensing an image, said method comprising the steps of:

closing an electrical path between a first terminal and a second terminal of a charge accumulator;

providing a reference current to said second terminal while said electrical path is maintained, so as to reset said charge accumulator;

opening said electrical path between said charge accumulator terminals;

acquiring optical radiation corresponding to the image;

converting said acquired optical radiation into charge carriers of one polarity;

accumulating said charge carriers onto said first terminal, so as to produce a voltage level in said charge accumulator in proportion to the amount of optical radiation acquired; and

providing said reference current to said second terminal so as to sense said charge accumulator voltage level and produce an output current signal, said output current signal being related to the amount of optical radiation acquired.

8. The method of claim 7 wherein said charge accumulator comprises a MOSFET.

9. An image sensing array for receiving incident optical radiation representative of an image and converting an external reference current into a plurality of current signal outputs related to the image, said image sensing array comprising:

a plurality of pixels, each said pixel comprising;

a photosensitive element for receiving a portion of the optical radiation and generating charge carriers of one polarity in relation to the amount of radiation acquired;

charge accumulation means, connected to said photosensitive element, for accumulating the charge carriers generated by said photosensitive element;

reset switching means comprising two terminals, one reset switching means terminal connected to said photosensitive element and the other reset switching terminal connected to said charge accumulation means; and

select switching means, connected to said charge accumulation means, for providing the reference current to said charge accumulation means such that a current signal is produced;

an input reference mirror section connected to the external reference current;

a plurality of output reference mirror sections connected to said input reference mirror section; and

a plurality of reference signal switching means, each said reference signal switching means disposed between a respective portion of said plurality of pixels and a respective one of said output reference mirror sections, for providing the reference current to said respective portion of pixels.

10. The image sensing array of claim 9 further comprising an output current mirror, for receiving each said current signal and providing the plurality of current signal outputs.

11. The image sensing array of claim 9 further comprising at least one multiplexer, for switching current to or from a selected portion of pixels.

12. The image sensing array of claim 11 wherein said multiplexer comprises a plurality of MOSFET devices.

13. The image sensing array of claim 11 further comprising at least one decoder.