Method for manufacturing a semiconductor device

• US 5,923,962 A
• Filed: 04/28/1995
• Issued: 07/13/1999
• Est. Priority Date: 10/29/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Zhang, Hongyong, Miyanaga, Akiharu, Fukunaga, Takeshi, Ohtani, Hisashi
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): SULSKY, MARTIN S
• Application Number:
  US08/430,623
• Time in Patent Office: 1,537 Days
• Field of Search: 437/21, 437/40 TFT, 437/40 TFI, 437/41 TFT, 437/41 TFI, 437/233, 437/967, 437/973, 437/230, 437/245, 437/88, 437/174, 437/142, 437/159, 148/DIG. 16, 148/DIG. 122, 438/150, 438/166, 438/486, 438/678
• US Class Current: 438/150
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: Y10S 148/016 Catalyst

Abstract

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;

disposing said solution in contact with at least a portion of a semiconductor film comprising silicon on an insulating surface;

forming a continuous layer containing said catalyst in contact with said semiconductor film; and

crystallizing said semiconductor film by heating,

wherein said catalyst is included in said solution at a concentration of 200 ppm or lower.

2. A method according to claim 1 wherein said catalyst comprises a material selected from the group consisting of Ni, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

3. A method according to claim 1 wherein said catalyst is included in said solution at a concentration of 1-200 ppm.

4. A method according to claim 1 wherein concentration of the catalyst in the solution is 50 ppm or lower.

5. A method according to claim 1 wherein concentration of the catalyst in the solution is 10 ppm or lower.

6. A method according to claim 1 wherein said semiconductor film is amorphous.

7. A method according to claim 1 wherein said solution is maintained in contact with said semiconductor film before said crystallizing.

8. A method according to claim 7 wherein concentration of the catalyst which is introduced in to the semiconductor film is controlled by changing a period in which said solution is maintained in contact with the semiconductor film.

9. A method according to claim 1 further comprising the steps of increasing the crystallinity of said semiconductor film by irradiating said film with light after the crystallizing step.

10. A method according to claim 1 wherein said liquid is selected from the group consisting of water, alcohol, acid and ammonium.

11. A method according to claim 1 further comprising the step of interposing an oxide film between said solution and said semiconductor film.

12. A method according to claim 1 wherein said liquid is selected from the group consisting of benzene, toluene, xylene, carbon tetrachloride, chloroform and ether.

13. A method according to claim 1 wherein said liquid is a polar solvent.

14. A method according to claim 13 wherein said substance is a compound selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetyl acetonate, 4-cyclohexyl butyric acid, nickel oxide and nickel hydroxide.

15. A method according to claim 1 wherein said liquid is a non-polar solvent.

16. A method according to claim 15 wherein said substance is a compound selected from the group consisting of nickel acetyl acetonate and 2-ethyl hexanoic acid nickel.

17. A method according to claim 1 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

18. A method for manufacturing a semiconductor device comprising the steps of:

preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;

disposing said solution in contact with at least a first region of a semiconductor film comprising silicon on an insulating surface;

forming a continuous layer including said catalyst in contact with said first region of said semiconductor film; and

heating said semiconductor film in order that crystals grow from said first region toward a second region of the semiconductor film adjacent to said first region in a direction parallel with a surface of said semiconductor film;

patterning said semiconductor film into an island to form an active region of said semiconductor, said island excluding said first region of the semiconductor film,

wherein said semiconductor film comprises said catalyst at a concentration not higher than 1×

10¹⁹ cm^-3.

19. A method according to claim 18 wherein said crystallization promoting material is contained in the first region of the semiconductor film at a higher concentration than in the second region after said heating.

20. A method according to claim 18 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

21. A method according to claim 18 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

22. A method for manufacturing a semiconductor device comprising the steps of:

preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;

disposing said solution in contact with at least a first portion of a semiconductor film comprising silicon on an insulating surface;

heating said semiconductor film in order that crystals grow from said first portion toward a second portion of the semiconductor film to which said crystallization promoting material is not added, and

forming said semiconductor device by using said second portion of the semiconductor film as an active region of said semiconductor device, said active region excluding said first portion,

wherein said semiconductor film comprises said catalyst at a concentration of 1×

10¹⁹ atoms/cm³ or less.

23. A method according to claim 22 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

24. A method according to claim 22 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

25. A method for manufacturing a semiconductor device comprising the steps of:

preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon, and said liquid including an interfacial active agent;

disposing said solution in contact with a semiconductor film comprising silicon on an insulating surface;

forming a continuous layer containing said catalyst in contact with said semiconductor film; and

then

crystallizing said semiconductor film by heating.

26. The method of claim 25 wherein said substrate is selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetyl acetonate, 4-cyclohexyl butyric acid, nickel oxide and nickel hydroxide.

27. A method according to claim 25 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

28. A method according to claim 25 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

29. A method for manufacturing a semiconductor device comprising the steps of:

preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;

forming a semiconductor film on an insulating film;

forming a thin oxide film in contact with said semiconductor film;

disposing said solution in contact with at least a portion of said semiconductor film through said thin oxide film;

forming a continuous layer including said substance in contact with said semiconductor film; and

then

crystallizing said semiconductor film by heating.

30. A method according to claim 29 further comprising the step of irradiating said semiconductor film with laser light in order to further crystallize said semiconductor layer after said heating after said semiconductor film is crystallized by said heating step.

31. A method according to claim 29 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

32. A method according to claim 29 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.