Optoelectronic transducer and production methods

• US 5,925,898 A
• Filed: 01/26/1998
• Issued: 07/20/1999
• Est. Priority Date: 07/18/1996
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Spath, Werner
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US09/013,292
• Time in Patent Office: 540 Days
• Field of Search: 257/98, 257/99, 257/432, 257/433
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/02345 Wire-bonding
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

An optoelectronic transducer configuration has a radiation-emitting and/or receiving semiconductor component fastened to a carrier plate in such a way that its beam exit/entry face is directed towards the carrier plate. The carrier plate is composed of a material which is transparent to the radiation. A device for focusing the radiation is additionally disposed on the carrier plate. The optoelectronic transducer is distinguished in particular by low reflection losses and simple mounting. A multiplicity of such transducers can be fabricated as a unit and then separated.

Claims

1. An optoelectronic transducer, comprising:

a carrier plate;

at least one of a radiation-emitting and receiving semiconductor component fastened to said carrier plate, said semiconductor component having a beam exit/entry face directed towards said carrier plate, said carrier plate transparent to radiation emitted and received by said semiconductor device;

a device for focusing the radiation emitted and received by said semiconductor component;

said beam exit/entry face having at least one first contact metallization layer, said carrier plate having a second contact metallization layer, said first contact metallization layer and said second contact metallization layer electrically conductively connected to one another; and

said beam exit/entry face of said semiconductor component and said carrier plate defining a distance therebetween of at most one-tenth of a wavelength of the emitted and received radiation.

2. The optoelectronic transducer according to claim 1, wherein said carrier plate has an island with a surface, and said beam exit/entry face of said semiconductor component is seated on said surface of said island.

3. The optoelectronic transducer according to claim 1, wherein said carrier plate is formed from a semiconductor material transparent to the emitted and received radiation.

4. The optoelectronic transducer according to claim 1, wherein said device for focusing the radiation is integrally formed with said carrier plate.

5. The optoelectronic transducer according to claim 1, wherein said device for focusing the radiation is produced separately and connected to said carrier plate.

6. The optoelectronic transducer according to claim 1, wherein said device for focusing the radiation is a converging lens.

7. The optoelectronic transducer according to claim 1, wherein said device for focusing the radiation is a diffractive optical element.

8. The optoelectronic transducer according to claim 1, wherein said device for focusing the radiation and said semiconductor component are disposed on opposite sides of said carrier plate.

9. The optoelectronic transducer according to claim 2, wherein said carrier plate has a depression formed therein, said second contact metallization layer is disposed in said depression and said island is surrounded by said depression.