Three dimensional reconfigurable photoconductive antenna array element

• US 5,926,148 A
• Filed: 08/25/1997
• Issued: 07/20/1999
• Est. Priority Date: 08/25/1997
• Status: Expired due to Fees

• Current Assignee: United States Air Force
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: Mittleman, Steven D., Liu, David Da-Wei, Carr, Paul H.
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): PHAN, THO GIA
• Application Number:
  US08/934,013
• Time in Patent Office: 694 Days
• Field of Search: 343/720, 343/721, 343/754, 343/783, 343/785, 342/368, 342/371, 250/550, 250/551, 250/552
• US Class Current: 343/785
• CPC Class Codes: H01Q 13/24 constituted by a dielectric or ferromagnetic rod or pipe H01Q13/28 takes precedence
• CPC Class Codes: H01Q 3/2676 Optically controlled phased array

Abstract

First and second tandemly positioned electrically biased semiconductor members radiate microwave energy in response to the receipt of an excitation light beam having two wavelengths related to the bandgaps of the members. The projected microwave beam may be made more narrow and directional if two of the members are electrically biased at the same time. An inefficient frequency doubler generates the two wavelength beam enabling a single light beam to excite both members in a simple, rugged photoconductive antenna element.

Claims

1. A microwave radiating photoconductive antenna component comprising:

(a) a plurality of optically excitable microwave radiating semiconductor members;

(b) first voltage application means for applying sufficient voltage to a first microwave radiating semiconductor member to cause said first semiconductor member to radiate microwave radiation in response to the receipt of a light beam having a first wavelength related to the bandgap of the material of said first semiconductor member;

(c) second voltage application means for applying sufficient voltage to a second microwave radiating semiconductor member to cause said second microwave radiating semiconductor member to radiate microwave radiation in response to the receipt of a light beam having a second wavelength, different from said first-wavelength, and related to the bandgap of the material of said second semiconductor member; and

(d) light beam generator means for directing light of said first wavelength at said first, semiconductor member and light having said second wavelength at said second semiconductor member to enable both semiconductor members to radiate microwave energy upon the application of said voltage thereto.

2. The antenna component of claim 1 wherein said light beam generator means projects light of said first and second wavelengths at said first microwave radiating semiconductor member, and wherein said first and second semiconductor members are positioned in tandem to enable light of said second wavelength to pass through said first semiconductor member and be directed at said second semiconductor member.

3. The antenna component of claim 2 wherein said light beam generator means includes an inefficient frequency doubler which provides a light beam that includes said first and second wavelengths in a simple manner.

4. The antenna component of claim 2 wherein said first semiconductor comprises gallium arsenide and said second semiconductor member comprises indium phosphide.

5. The antenna component of claim 4 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

6. The antenna component of claim 2 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

7. The antenna component of claim 1 wherein said light beam generator means includes an inefficient frequency doubler which provides a light beam that includes said first and second wavelengths in a simple manner.

8. The antenna component of claim 7 wherein said first semiconductor comprises gallium arsenide and said second semiconductor member comprises indium phosphide.

9. The antenna component of claim 7 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

10. The antenna component of claim 1 wherein said first semiconductor comprises gallium arsenide and said second semiconductor member comprises indium phosphide.

11. The antenna component of claim 10 wherein said light beam generator generates light having a first wavelength of 526 nanometersand a second wavelength of 1052 nanometers.

12. The antenna component of claim 1 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

13. A microwave radiating photoconductive antenna component comprising:

(a) a plurality of tandemly positioned optically excitable microwave radiating semiconductor members;

(b) first voltage application means for selectively applying sufficient voltage to a first microwave radiating semiconductor member to cause said first semiconductor member to radiate microwave radiation in response to the receipt of a light beam having a first wavelength related to the bandgap of the material of said first semiconductor member;

(c) second voltage application means for selectively applying sufficient voltage to a seqond microwave radiating semiconductor member to cause said second microwave radiating semiconductor member to radiate microwave radiation in response to the receipt of a light beam having a second wavelength, different from said first wavelength, and related to the bandgap of the material of said second semiconductor member; and

(d) light beam generator means for directing light of said first wavelength at said first semiconductor member and light having said second wavelength at said second semiconductor member to enable both semiconductor members to radiate microwave energy upon the application of said voltage thereto.

14. The antenna component of claim 13 wherein said light beam generator means includes an inefficient frequency doubler which provides a light beam that includes said first and second wavelengths in a simple manner.

15. The antenna component of claim 14 wherein said first semiconductor comprises gallium arsenide and said second semiconductor member comprises indium phosphide.

16. The antenna component of claim 15 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

17. The antenna component of claim 14 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

18. The antenna component of claim 13 wherein said first semiconductor comprises gallium arsenide and said second semiconductor member comprises indium phosphide.

19. The antenna component of claim 15 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.

20. The antenna component of claim 13 wherein said light beam generator generates light having a first wavelength of 526 nanometers and a second wavelength of 1052 nanometers.