Semiconductor memory having NAND cell array and method of making thereof
First Claim
1. A NAND cell memory block array comprising:
- first and second pluralities of memory blocks perpendicularly arranged in first and second directions, each of said first and second pluralities of memory blocks having a plurality of transistors, said transistors being serially connected to one another.
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Accused Products
Abstract
A NAND cell memory block array includes word lines and active regions arranged in X and Y directions. When a voltage of Vcc is applied to the word lines arranged in the X direction, a voltage of -Vcc is applied to the word lines arranged in the Y direction to turn off all transistors placed under the word lines arranged in the Y direction, thereby blocking the current path of the transistor. When a voltage of Vcc is applied to the word lines arranged in the Y direction, a voltage of -Vcc is applied to the word lines arranged in the X direction to turn off all transistors placed under the word lines arranged in the X direction, thereby blocking the current path of the transistor. The memory blocks arranged in the X and Y direction interweave or interleave with each other such that integration density can be doubled.
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Citations
14 Claims
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1. A NAND cell memory block array comprising:
- first and second pluralities of memory blocks perpendicularly arranged in first and second directions, each of said first and second pluralities of memory blocks having a plurality of transistors, said transistors being serially connected to one another.
- View Dependent Claims (2, 3)
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4. A method for forming a NAND cell memory block array, comprising the steps of:
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(a) forming a field insulating layer to perpendicularly arrange active regions in first and second directions, said active region having the shape of strip; (b) forming an impurity region in a portion in which a depletion transistor is formed; (c) forming a first gate in the first direction; (d) forming an insulating layer, and forming a second gate perpendicular to said first direction; and (e) implanting impurities into said active region placed on both sides of said first and second gate lines, to form source and drain regions. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A memory array comprising:
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a first plurality of memory blocks arranged in a first direction; and a second plurality of memory blocks arranged in a second direction which is different from the first direction, wherein each memory block includes a pair of memory sub-blocks, and each memory sub-block of said first plurality of memory blocks intersects each memory sub-block of said second plurality of memory blocks. - View Dependent Claims (12, 13, 14)
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Specification