In-situ acceptor activation in group III-v nitride compound semiconductors
First Claim
1. A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy comprising the steps of:
- growing a III-V nitride compound semiconductor in a reactor employing a reaction gas containing a p-type impurity;
annealing said nitride compound semiconductor at a temperature below the growth temperature of the III-V nitride compound semiconductor to activate acceptors of the p-type impurity;
the improvement comprising the carrying out the step of annealing in-situ in the reactor during reactor cooldown immediately after semiconductor growth in a reactor ambient comprising a nitrogen precursor of dimethylhydrazine, phenylhydrazine or tertiarybutylamine.
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Abstract
A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the reactor employing a reaction gas containing a p-type impurity and then annealing in-situ the nitride compound semiconductor to bring about acceptor activation, the annealing carried out at a temperature below the growth temperature of the III-V nitride compound semiconductor during reactor cooldown. A nitrogen (N) reactant or precursor is provided in the reactor during the annealing step which can produce a reactive form of N capable of suppressing surface decomposition and does not produce atomic hydrogen. Also, acceptor activation is achieved through the employment of a cap layer comprising a n-type Group III-V nitride material, e.g., n-GaN, grown on the p-doped Group III-V nitride layer preventing the occurrence of hydrogenation of the underlying p-doped layer during cooldown. This non-post-growth activation eliminates the need for a subsequent thermal anneal step since any acceptor passivation is prevented in the first instance.
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Citations
29 Claims
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1. A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy comprising the steps of:
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growing a III-V nitride compound semiconductor in a reactor employing a reaction gas containing a p-type impurity; annealing said nitride compound semiconductor at a temperature below the growth temperature of the III-V nitride compound semiconductor to activate acceptors of the p-type impurity; the improvement comprising the carrying out the step of annealing in-situ in the reactor during reactor cooldown immediately after semiconductor growth in a reactor ambient comprising a nitrogen precursor of dimethylhydrazine, phenylhydrazine or tertiarybutylamine. - View Dependent Claims (2, 3)
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4. A method of manufacturing and activating in-situ a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy in a reactor comprising the steps of:
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growing in the reactor a Group III-V nitride layer with a p-type dopant utilizing at least one Group III reactant with a nitrogen reactant at a growth temperature; discontinuing the growth of the p-type Group III-V nitride layer by switch out of the p-type dopant and all of the reactants; introducing a nitrogen precursor in the reactor that pyrolyzes into atomic nitrogen and molecular hydrogen for preventing decomposition of the as-grown p-type Group III-V nitride layer; and reducing reactor temperature below the growth temperature to a temperature where dehydrogenation of the as-grown p-type Group III-V nitride layer is achieved while controlling the rate of reactor cooling in a temperature range conducive to p-type acceptor activation for a period of time sufficient for activation of the p-type acceptors of the p-type dopant in the as-grown p-type Group III-V nitride layer. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing and activating in-situ a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy in a reactor comprising the steps of:
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growing in the reactor a III-V nitride compound semiconductor in a reactor employing a reaction gas containing a p-type impurity utilizing at least one Group III reactant with a nitrogen reactant at a growth temperature; switching out of the reactor the Group III reactant or reactants while continuing the flow of the nitrogen reactant to prevent surface decomposition of the as-grown III-V nitride compound semiconductor; reducing the temperature in the reactor from the growth temperature to a temperature where decomposition of the as-grown III-V nitride compound semiconductor will not substantially occur; switching out of the reactor the nitrogen reactant at a temperature where significant decomposition of the as-grown III-V nitride compound semiconductor will not occur and switching in a combined ambient gas permitting acceptor activation, said combined ambient gas comprising N2 and H2 ; controlling the rate of cooldown in the presence of said combined ambient gas within a temperature range in which acceptor activation occurs until activation is completed; and thereafter, cooling the reactor to room temperature. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy comprising the steps of:
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growing a III-V nitride compound semiconductor layer on a substrate in a reactor employing a reaction gas containing a p-type impurity; and growing a III-V nitride compound semiconductor cap layer on the p-type III-V nitride compound semiconductor layer in a reactor employing a reaction gas containing a n-type impurity to prevent hydrogen passivation of the p-type III-V nitride compound semiconductor layer during subsequent growth or cooldown. - View Dependent Claims (27, 28, 29)
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Specification