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Method of forming gallium nitride crystal

  • US 5,928,421 A
  • Filed: 08/26/1997
  • Issued: 07/27/1999
  • Est. Priority Date: 08/27/1996
  • Status: Expired due to Term
First Claim
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1. A method of forming a gallium nitride crystal, comprising forming a semiconductor thin film and a first gallium nitride crystal on a semiconductor substrate in that order, both said semiconductor thin film and said first gallium nitride crystal having a different lattice constant from a lattice constant of said semiconductor substrate, removing said semiconductor substrate, and thereafter forming a second gallium nitride crystal on said first gallium nitride crystal.

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