Method of forming gallium nitride crystal
First Claim
1. A method of forming a gallium nitride crystal, comprising forming a semiconductor thin film and a first gallium nitride crystal on a semiconductor substrate in that order, both said semiconductor thin film and said first gallium nitride crystal having a different lattice constant from a lattice constant of said semiconductor substrate, removing said semiconductor substrate, and thereafter forming a second gallium nitride crystal on said first gallium nitride crystal.
2 Assignments
0 Petitions
Accused Products
Abstract
To reduce a dislocation density within a gallium nitride crystal and make cleaving possible, after forming a thin film of silicon carbide and a first gallium nitride crystal on a silicon substrate, only the silicon substrate is removed in an acid solution such as hydrofluoric acid and nitric acid as they are mixed. Following this, a second gallium nitride crystal is formed on the remaining thin film of silicon carbide and the first gallium nitride crystal.
-
Citations
28 Claims
- 1. A method of forming a gallium nitride crystal, comprising forming a semiconductor thin film and a first gallium nitride crystal on a semiconductor substrate in that order, both said semiconductor thin film and said first gallium nitride crystal having a different lattice constant from a lattice constant of said semiconductor substrate, removing said semiconductor substrate, and thereafter forming a second gallium nitride crystal on said first gallium nitride crystal.
- 5. A method of forming a gallium nitride crystal, comprising forming a semiconductor thin film on a semiconductor substrate, said semiconductor thin film having a different lattice constant from a lattice constant of said semiconductor substrate, removing said semiconductor substrate and thereafter forming a gallium nitride crystal on said semiconductor thin film.
- 9. A method of forming a gallium nitride crystal, comprising forming a semiconductor thin film and a gallium nitride crystal on a semiconductor substrate in that order, both said semiconductor thin film and said gallium nitride crystal having a different lattice constant from a lattice constant of said semiconductor substrate, and thereafter removing said semiconductor substrate.
- 12. A method of forming a gallium nitride crystal, comprising forming a thin film of silicon carbide and a first gallium nitride crystal on a silicon substrate in that order, both said thin film and said first gallium nitride crystal having a different lattice constant from a lattice constant of said silicon substrate, removing said silicon substrate, and thereafter forming a second gallium nitride crystal on said first gallium nitride crystal.
- 18. A method of forming a gallium nitride crystal, comprising forming a thin film of silicon carbide on a silicon substrate, removing said silicon substrate and thereafter forming a gallium nitride crystal on said thin film of silicon carbide.
- 24. A method of forming a gallium nitride crystal, comprising forming a thin film of silicon carbide and a gallium nitride crystal on a silicon substrate in that order, and removing said silicon substrate.
Specification