Semiconductor floating gate sensor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor substrate;
a first doped region in the semiconductor substrate;
a second doped region in the semiconductor substrate, wherein the second doped region is separated from the first doped region to provide a first channel region having a length;
a gate structure overlying at least the first channel region;
a guard ring overlying the semiconductor substrate and encompassing the gate structure; and
a moveable conductive plate overlying at least a portion of the gate structure, wherein the moveable conductive plate is free to move in a direction with respect to the gate structure.
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Abstract
A sensor device (40) is formed in a semiconductor substrate (41). The sensor device (40) includes a microstructure (60) that is free to move in response to a force. The microstructure (60) is overlying a floating gate structure (51) and a channel region (44). A guard ring (52) is formed around the floating gate structure (51) to retard the migration of charge onto the floating gate structure (51). This in turn stabilizes the operational performance of the sensor device (40) over time.
9 Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a first doped region in the semiconductor substrate; a second doped region in the semiconductor substrate, wherein the second doped region is separated from the first doped region to provide a first channel region having a length; a gate structure overlying at least the first channel region; a guard ring overlying the semiconductor substrate and encompassing the gate structure; and a moveable conductive plate overlying at least a portion of the gate structure, wherein the moveable conductive plate is free to move in a direction with respect to the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A sensor device comprising:
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a semiconductor substrate; a first doped region in the semiconductor substrate; a second doped region in the semiconductor substrate, wherein the second doped region is separated from the first doped region to provide a first channel region having a length; a first conductive plate overlying at least the first channel region; a second conductive plate overlying the first channel region and the first conductive plate, wherein the second conductive plate is moveable; and a guard ring overlying the semiconductor substrate and encircling the first conductive plate. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification