High density trench DMOS transistor with trench bottom implant

• US 5,929,481 A
• Filed: 11/04/1997
• Issued: 07/27/1999
• Est. Priority Date: 07/19/1996
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Ng, Daniel, Nim, Danny, Hshieh, Fwu-Iuan, Floyd, Brian H., Chang, Mike F.
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US08/964,419
• Time in Patent Office: 630 Days
• Field of Search: 257/328, 257/329, 257/330
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.

Claims

1. A transistor structure comprising:

a substrate of a first conductivity type;

a drift region overlying the substrate and of the first conductivity type and doped to a concentration less than that of the substrate;

a body region of a second conductivity type opposite that of the first conductivity type overlying the drift region, and defining a principal surface of the transistor structure wherein the body region includes a channel portion in contact with a side of the trench near the principal surface, and a deep body portion more heavily doped than the channel portion and spaced apart from a side of the trench;

a conductive gate electrode extending in a trench from the principal surface through the body region and into the drift region to a depth less than that of the body region;

a source region of the first conductivity type extending into the body region from the principal surface; and

a trench bottom region of the first conductivity type and of a higher doping concentration than the drift region, and extending from a bottom of the trench into the drift region as deeply as does the deep body portion of the body region and spaced apart from the body region.

2. The transistor structure of claim 1, wherein the trench bottom region has a doping concentration in a range of 1×

10¹⁶ /cm³ to 8×

10¹⁶ /cm³.

3. The transistor of claim 1, wherein the trench bottom region has a doping concentration at least four times that of the drift region.

4. The transistor structure of claim 1, wherein the trench bottom region is laterally spaced apart from the deep body portion of the body region.

5. The transistor structure of claim 1, wherein the trench bottom region extends at least 0.5 μ

m into the drift region from the bottom of the trench.

6. The transistor structure of claim 1, wherein the trench bottom region is spaced apart from the substrate by at least 1 μ

m.