Glass substrate assembly, semiconductor device and method of heat-treating glass substrate

• US 5,929,487 A
• Filed: 06/05/1995
• Issued: 07/27/1999
• Est. Priority Date: 10/12/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Sakama, Mitsunori, Fukada, Takeshi
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US08/462,773
• Time in Patent Office: 1,513 Days
• Field of Search: 257/347, 257/348, 257/633, 257/634, 428/426, 428/432
• US Class Current: 257/347
• CPC Class Codes: C03B 25/00 Annealing glass products
• CPC Class Codes: C03B 32/00 Thermal after-treatment of glass products not provided for in groups C03B19/00 , C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
• CPC Class Codes: C03C 17/001 General methods for coating; Devices therefor
• CPC Class Codes: C03C 17/22 with other inorganic material C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/225 Nitrides
• CPC Class Codes: C03C 17/3482 comprising silicon, hydrogenated silicon or a silicide
• CPC Class Codes: C03C 2217/281 Nitrides
• CPC Class Codes: C03C 2217/282 Carbides, silicides
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: Y02P 40/57 Improving the yield, e-g- reduction of reject rates

Abstract

Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.

Claims

1. A semiconductor device comprising:

a substrate; and

a film provided on top and bottom surfaces of said substrate and comprising aluminum nitride;

a transistor having a crystalline semiconductor film over said film comprising aluminum nitride,

wherein said film comprising aluminum nitride has a thickness of 500 Å

to 3 μ

m, and

wherein said crystalline semiconductor film is in contact with said film comprising aluminum nitride or adjacent thereto with an insulating film therebetween.

2. A substrate comprising:

a substrate; and

a film provided on at least one of top and bottom surfaces of said substrate and comprising aluminum nitride;

a crystalline semiconductor film provided over said film comprising aluminum nitride, said crystalline semiconductor film having a source and a drain and a channel provided between said source and said drain;

a gate insulating film provided on said crystalline semiconductor film; and

a gate electrode provided on said gate insulating film,

wherein said film comprising aluminum nitride has a thickness of 500 Å

to 3 μ

m and said substrate has a strain point of 550-690°

C., and

wherein said crystalline semiconductor film is in contact with said film comprising aluminum nitride or adjacent thereto with an insulating film therebetween.

3. A semiconductor device comprising:

a substrate;

a film provided on at least one of top and bottom surfaces of said substrate and comprising aluminum nitride; and

a transistor having a crystalline semiconductor film over said film comprising aluminum nitride,

wherein said film comprising aluminum nitride has a thickness of 500 Å

to 3 μ

m and said substrate has a strain point of 550-690°

C., and

wherein said crystalline semiconductor film is in contact with said film comprising aluminum nitride or adjacent thereto with an insulating film therebetween.

4. A semiconductor device comprising:

a substrate;

a film provided on top and bottom surfaces of said substrate and comprising aluminum nitride;

a crystalline semiconductor film provided over said film comprising aluminum nitride, said crystalline semiconductor film having a source and a drain and a channel provided between said source and said drain;

a gate insulating film provided on said crystalline semiconductor film; and

a gate electrode provided on said gate insulating film,

wherein said film comprising aluminum nitride has a thickness of 500 Å

to 3 μ

m, and

wherein said crystalline semiconductor film is in contact with said film comprising aluminum nitride or adjacent thereto with an insulating film therebetween.