Heating device for semiconductor wafers

• US 5,930,456 A
• Filed: 05/14/1998
• Issued: 07/27/1999
• Est. Priority Date: 05/14/1998
• Status: Expired due to Term

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Original Assignee: AG Associates Incorporated (KSBG Kommunale Beteiligungsgesellschaft GmbH & Company KG)
• Inventors: Vosen, Steven R.
• Primary Examiner(s): PELHAM, JOSEPH MOORE
• Application Number:
  US09/078,865
• Time in Patent Office: 439 Days
• Field of Search: 219/390, 219/405, 219/411, 392/411, 392/416, 392/418, 392/422, 392/423, 392/424, 118/724, 118/725, 118/730, 118/50.1, 250/492.22, 250/495.1, 438/799
• US Class Current: 392/416
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H05B 3/0047 for semiconductor manufacture

Abstract

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Claims

1. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber adapted to contain a semiconductor wafer; and

a heating device in communication with said thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising a plurality of light energy sources secured to a mounting base and positioned so as to emit electromagnetic energy onto said semiconductor wafer, said light energy sources being assembled on said mounting base in a manner so as to form at least one spiral.

2. An apparatus as defined in claim 1, wherein said light energy sources form a single spiral on said mounting base.

3. An apparatus as defined in claim 1, wherein said light energy sources form two spirals on said mounting base.

4. An apparatus as defined in claim 1, wherein said heating device is separated from said thermal processing chamber by a window.

5. An apparatus as defined in claim 1, wherein said light energy sources are positioned in relation to one another such that the center of not more than three light energy sources are disposed about a common radii extending from a collective center of said plurality of light energy sources.

6. An apparatus as defined in claim 1, further comprising at least one temperature sensing device for sensing the temperature of said semiconductor wafer at a plurality of locations.

7. An apparatus as defined in claim 6, further comprising a controller in communication with said at least one temperature sensing device and with at least certain of said light energy sources, said controller being configured to control the amount of electromagnetic energy being emitted by said light energy sources in response to temperature information received from said at least one temperature sensing device.

8. An apparatus as defined in claim 6, further comprising a substrate holder for receiving said semiconductor wafer within said thermal processing chamber, said substrate holder being configured to rotate said wafer.

9. An apparatus as defined in claim 7, wherein said heating device is configured to rotate said light energy sources.

10. An apparatus as defined in claim 1, wherein said light energy sources are substantially vertically oriented with respect to semiconductor wafers contained in said thermal processing chamber.

11. An apparatus as defined in claim 1, further comprising reflective plates extending adjacent to said light energy sources, said reflector plates being positioned so as to form spirally-shaped channels in which said light energy sources are disposed.

12. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber adapted to contain a semiconductor wafer; and

a heating device in communication with said thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising an assembly of light energy sources positioned so as to emit electromagnetic energy onto said semiconductor wafer, said light energy sources being substantially vertically oriented with respect to said semiconductor wafer, said assembly of light energy sources defining a collective center in alignment with the center of said semiconductor wafer, said light energy sources being positioned with respect to one another such that the center of no more than five light energy sources are disposed about a common radii extending from said collective center for forming a plurality of heating zones on said semiconductor wafer.

13. An apparatus as defined in claim 12, wherein said light energy sources are randomly positioned with respect to one another.

14. An apparatus as defined in claim 12, wherein at least certain of said light energy sources are in a spiral configuration.

15. An apparatus as defined in claim 12, wherein said light energy sources are positioned with respect to one another such that the centers of no more than three light energy sources are disposed about a common radii extending from said collective center.

16. An apparatus as defined in claim 12, wherein the center of each light energy source is disposed about a different radii extending from said collective center.

17. An apparatus as defined in claim 13, further comprising:

at least one temperature sensing device for sensing the temperature of said semiconductor wafer at a plurality of locations; and

a controller in communication with said at least one temperature sensing device and at least certain of said light energy sources, said controller being configured to control the amount of electromagnetic energy being emitted by said light energy sources in response to temperature information received from said at least one temperature sensing device.

18. An apparatus as defined in claim 12, further comprising a substrate holder contained within said thermal processing chamber, said substrate holder being configured to rotate said semiconductor wafer.

19. An apparatus as defined in claim 12, wherein said heating device rotates with respect to said semiconductor wafer contained in said thermal processing chamber.