Process for fabricating low leakage current electrode for LPCVD titanium oxide films
First Claim
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1. A process for fabricating electrodes for capacitor dielectrics of semiconductor memory devices having low leakage current characteristics, said process comprising the steps of:
- preparing a semiconductor silicon substrate;
depositing a titanium oxide film, the film being substantially free of dissimilar metals, over said semiconductor silicon substrate;
annealing said deposited titanium oxide film;
depositing a layer of top electrode on said annealed titanium oxide film so as to overlie said film; and
subjecting a high temperature environment.
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Abstract
A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.
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23 Claims
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1. A process for fabricating electrodes for capacitor dielectrics of semiconductor memory devices having low leakage current characteristics, said process comprising the steps of:
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preparing a semiconductor silicon substrate; depositing a titanium oxide film, the film being substantially free of dissimilar metals, over said semiconductor silicon substrate; annealing said deposited titanium oxide film; depositing a layer of top electrode on said annealed titanium oxide film so as to overlie said film; and subjecting a high temperature environment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A process for fabricating electrodes for capacitor dielectrics of semiconductor memory devices having low leakage current characteristics, said process comprising the steps of:
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preparing a semiconductor silicon substrate; depositing a titanium oxide film, the film being substantially free of dissimilar metals, over said semiconductor silicon substrate; annealing said deposited titanium oxide film; depositing a layer of tungsten nitride top electrode on said annealed titanium oxide film so as to overlie said film; and subjecting a high temperature of about 400-800°
C. in an N2 environment for about 30 minutes.
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Specification