Compact self-aligned body contact silicon-on-insulator transistors
First Claim
1. A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor body over an electrical insulator;
providing source and drain areas in the semiconductor body on either side of a gate channel;
introducing dopant into un-masked portions of the source and drain areas to form source and drain regions in the semiconductor body, such mask blocking such dopant from passing into the masked portion of at least one of the source and drain areas and the contiguous portion of the semiconductor body; and
depositing a metal between at least one of the source and drain regions and the contiguous portion of the semiconductor body to provide a Schottky diode between at least one of the source and drain regions and the contiguous portion of the semiconductor body.
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0 Petitions
Accused Products
Abstract
A field effect transistor structure having: a first type conductivity semiconductor body disposed on an insulator and having formed in different regions thereof: (a) a source region; (b) a drain region, such source and drain regions being of a conductivity type opposite the conductivity type of the body; (c) a gate electrode adapted to control a flow of carriers in a channel through the semiconductor body between the source and drain regions; and (d) a Schottky contact region providing a Schottky diode between the semiconductor body and one of the source and drain regions. With such an arrangement, the Schottky diode, when forward biased provides a fixed voltage, about 0.3 V, between the semiconductor body and one of the source and drain regions. A method for forming a semiconductor structure, comprising the steps of: providing a semiconductor body over an electrical insulator; providing source and drain areas in the semiconductor body on either side of a gate channel; introducing dopant into un-masked portions of the source and drain areas to form source and drain regions in the semiconductor body, such mask blocking such dopant from passing into the masked portion of at least one of the source and drain areas and the contiguous portion of the semiconductor body; and forming a metal between the masked portion of the at least one of the source and drain regions and the contiguous portion of the semiconductor body. The metal forming step may be performed prior to, or subsequent to, the dopant introduction step.
91 Citations
17 Claims
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1. A method for forming a semiconductor structure, comprising the steps of:
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providing a semiconductor body over an electrical insulator; providing source and drain areas in the semiconductor body on either side of a gate channel; introducing dopant into un-masked portions of the source and drain areas to form source and drain regions in the semiconductor body, such mask blocking such dopant from passing into the masked portion of at least one of the source and drain areas and the contiguous portion of the semiconductor body; and depositing a metal between at least one of the source and drain regions and the contiguous portion of the semiconductor body to provide a Schottky diode between at least one of the source and drain regions and the contiguous portion of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, the method comprising:
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providing a semiconductor region of a first conductivity type; forming a conductive gate over a channel region of the semiconductor region, the conductive gate being insulated from the channel region; masking a second region of the of the semiconductor region, the second region being adjacent the channel region; doping source and drain regions of the semiconductor region with impurities of a second conductivity type opposite the first conductivity type, the source region being separated from the drain region by the channel region; and forming a metal layer over second region and at least one of the source and drain regions, the metal layer abutting the second region; wherein the second region and the channel region have substantially the same doping concentration. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of forming a field effect transistor structure, the method comprising:
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providing a first type conductivity semiconductor body disposed on an insulator; forming a source region in the semiconductor body; forming a drain region in the semiconductor body, the source and drain regions being of a conductivity type opposite the conductivity type of the semiconductor body; forming a gate electrode adapted to control a flow of carriers in a channel through the semiconductor body between the source and drain regions; and forming a Schottky contact region providing a Schottky diode between the semiconductor body and at least one of the source and drain regions. - View Dependent Claims (15, 16, 17)
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Specification