Exact transmission balanced alternating phase-shifting mask for photolithography

• US 5,932,377 A
• Filed: 02/24/1998
• Issued: 08/03/1999
• Est. Priority Date: 02/24/1998
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Liebmann, Lars W., Mansfield, Scott M., Wong, Alfred K., Ferguson, Richard A., O'Grady, David S.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US09/028,833
• Time in Patent Office: 525 Days
• Field of Search: 430/5, 430/22, 430/322, 430/323
• US Class Current: 430/5
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Abstract

A two-step method for eliminating transmission errors in alternating phase-shifting masks is described. Initially, the design data is selectively biased to provide a coarse reduction in the inherent transmission error between features of different phase, size, shape, and/or location. During fabrication of the mask with the modified data, residual transmission errors are then eliminated via the positioning of the edges of the etched-quartz trenches which define the phase of a given feature to a set location beneath the opaque chrome film. Application of feedback, in which the aerial image of the mask is monitored during the positioning of the etched-quartz edges, provides additional and precise control of the residual transmission error.

Claims

1. A method of eliminating pattern size and placement inaccuracies caused by errors in the relative amount of light transmitted through transparent features of different phase on a phase-shifted photomask, the method comprising the steps of:

building design data of said photomask representing pattern size, shape, placement and phase of said transparent features;

modifying said design data by altering the size or shape of at least one of said phase-shifted features;

fabricating said photomask with said modified design data by forming opaque and transparent features of said photomask and selectively etching transparent material of said photomask to a depth which establishes the phases of said transparent phase-shifted features, thereby partially reducing said transmission errors; and

subjecting said photo-mask to an etch-back process comprising adjusting edge locations of said transparent material within said etched features in relation to edge locations of said opaque film of said photomask to a position wherein residual transmission errors between said features having a different phase on said photomask are corrected, thereby eliminating said residual transmission errors that were not previously corrected by a combination of said design data modification step and said fabrication step.

2. The method of claim 1, wherein non-phase-shifted phases and 180°

phases are present in said design data.

3. The method of claim 1, wherein 90°

and 270°

phases are present in said design data.

4. The method of claim 1, wherein at least two phases are present in the said design data.

5. The method of claim 1, wherein said design data comprises dark-field patterns.

6. The method of claim 1, wherein said design data comprises bright-field patterns.

7. The method of claim 1, further comprising the step of selecting the magnitude of said design modifications for minimizing said transmission error prior to said etch-back process.

8. The method of claim 1, further comprising the step of selecting the magnitude of said design modifications for optimizing process control and yield during said fabrication of said photomask, and further comprising the step of positioning edge locations of said transparent material during said etch-back process.

9. The method of claim 1, wherein said design modifications are determined by software tools.

10. The method of claim 1, wherein said design modifications are selected to optimize the process control and improve the yield achieved during the photolithographic patterning of said photomask.

11. The method of claim 1, wherein said design modifications include corrections for optical proximity effects.

12. The method of claim 1, wherein all edges of said phase-shifted feature are moved independently in accordance with said changes to the size or shape of said phase-shifted feature during said design modifications.

13. The method of claim 12, wherein said movements of said edges of said phase-shifted features are selected based upon the shape and size of said phase-shifted feature.

14. The method of claim 12, wherein said movements of said edges of said phase-shifted features are selected based upon distance, size, shape, and phase of at least one neighboring feature to said phase-shifted feature.

15. The method of claim 1, wherein said etch-back process further comprises at least one step after which measurements of said residual transmission errors are taken in order to minimize said residual transmission errors at the completion of said at least one step.

16. The method of claim 15, wherein said measurements of said residual transmission errors are made by direct aerial image measurements of said photomask with an optical system configured to emulate the usage of said photomask during photolithographic patterning.

17. The method of claim 16, wherein said direct aerial image measurements of said photomask are provided by an aerial image measurements system (AIMS).

18. The method of claim 15, wherein said measurements of said residual transmission errors are made by photolithographic patterning of said photomask onto a wafer substrate and a subsequent characterization of said patterns obtained on said wafer substrate from said photolithographic patterning.

19. The method of claim 1, wherein said etch-back process is applied non-selectively to all of said features defined in said design data.

20. The method of claim 1, wherein said etch-back process is applied to a subset of said features in said design with predetermined characteristics that include size, shape, neighboring features, and phase.

21. The method of claim 1, wherein said etch-back process is incorporated into said selective etching of said transparent material by including an isotropic component to said selective etch.

22. A method of eliminating pattern size and placement inaccuracies caused by errors in the relative amount of light transmitted through transparent features of different phase on a phase-shifted photomask, the method comprising the steps of:

building design data of said photomask representing pattern size, shape, placement and phase of said transparent features;

selectively biasing said design data, said biasing including altering the size or shape of at least one of said phase-shifted features;

fabricating said photomask with said modified design data, forming opaque and transparent features of said photomask and selectively etching transparent material of said photomask to a depth which establishes the phases of said transparent phase-shifted features, said selective biasing of said design data coupled to said fabricating said photomask with said modified design data providing a first reduction of said transmission errors between said features; and

subjecting said photo-mask to an etch-back process comprising adjusting edge locations of said transparent material within said etched features in relation to edge locations of said opaque film of said photomask to a position, wherein residual transmission errors between said features having a different phase on said photomask that were not previously corrected by a combination of said design data modification step and said fabrication step are eliminated.