Method of laser ablation of semiconductor structures

• US 5,932,485 A
• Filed: 10/21/1997
• Issued: 08/03/1999
• Est. Priority Date: 10/21/1997
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Schofield, Kevin H.
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): Powell, Alva C
• Application Number:
  US08/955,220
• Time in Patent Office: 651 Days
• Field of Search: 438/690, 438/707, 438/742, 216/56
• US Class Current: 438/690
• CPC Class Codes: H01L 21/31105 Etching inorganic layers

Abstract

Disclosed is a process for exposing a metal-containing surface feature on an integrated circuit wafer by laser ablation. According to the invention, a silicon dioxide passivation layer is provided upon the surface feature. The silicon dioxide layer is transparent to electromagnetic radiation having a specified wavelength, such that the electromagnetic radiation is directed through the silicon dioxide layer onto the underlying surface feature. A portion of the surface feature is ablated. Ablation of the surface feature causes removal of an overlying portion of the silicon dioxide layer, thereby exposing the surface feature. Laser ablation may further be performed on optional overlying layers of silicon nitride and polyimide.

Claims

1. A process for exposing a surface on a diffusion barrier layer, said process comprising:

providing a semiconductor substrate;

providing a diffusion barrier layer upon said semiconductor substrate;

providing a silicon dioxide layer upon said diffusion barrier layer, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength; and

laser ablating a portion of said diffusion barrier layer by directing electromagnetic radiation having said selected wavelength through said silicon dioxide layer, a region of said silicon dioxide layer that is positioned upon said portion of said diffusion barrier being removed, thereby exposing a substantially planar surface on said diffusion barrier layer.

2. A process as recited in claim 1, further comprising, prior to laser ablating said portion of said diffusion barrier layer:

forming a layer of organic material upon said silicon dioxide layer; and

then

laser ablating a portion of said layer of organic material with electromagnetic radiation having a second wavelength, thereby forming an opening through said layer of organic material terminating at said region of said silicon dioxide layer that is removed while laser ablating said portion of said diffusion barrier.

3. A process as recited in claim 2, wherein:

said electromagnetic radiation having said selected wavelength is selected so as to substantially pass through said silicon dioxide material and to be substantially absorbed by said diffusion barrier; and

said electromagnetic radiation having said second wavelength is selected so as to be substantially absorbed by said organic material.

4. A process as recited in claim 3, wherein said selected wavelength is substantially equivalent to said second wavelength.

5. A process as recited in claim 2, wherein a thickness of said layer of organic material is in a range from about 5 microns to about 100 microns.

6. A process as recited in claim 1, wherein said selected wavelength is in a range from about 193 nanometers to about 308 nanometers.

7. A process as recited in claim 1, wherein said electromagnetic radiation having said selected wavelength has an energy density in a range from about 0.1 J/cm² to about 6.0 J/cm².

8. A process as recited in claim 1, further comprising, after providing said silicon dioxide layer, providing a silicon nitride layer upon said silicon dioxide layer.

9. A process as recited in claim 8, wherein said silicon dioxide layer and said silicon nitride layer have a combined thickness in a range from about 1.5 microns to about 2.0 microns.

10. A process as recited in claim 8, further comprising, after providing said silicon nitride layer, laser ablating a portion of said silicon nitride layer with electromagnetic radiation having a second wavelength, thereby forming an opening through said silicon nitride layer terminating at said region of said silicon dioxide layer that is removed while laser ablating said portion of said diffusion barrier.

11. A process as recited in claim 2, wherein said layer of organic material is substantially composed of a polyimide material.

12. A process as recited in claim 2, wherein said layer of organic material is substantially composed of benzocyclobutene.

13. A process as recited in claim 1, wherein said substantially planar surface of said diffusion barrier layer has a maximum peak-to-peak surface roughness less than about 1%.

14. A process as recited in claim 1, wherein providing said diffusion barrier layer upon said semiconductor substrate comprises forming said diffusion barrier layer upon an electrically conductive layer provided in said semiconductor substrate.

15. A process as recited in claim 14, wherein said diffusion barrier layer substantially prevents diffusion of material from said electrically conductive layer through said diffusion barrier.

16. A process as recited in claim 14, wherein said diffusion barrier layer is substantially composed of a refractory metal nitride.

17. A process as recited in claim 16, wherein said refractory metal nitride is titanium nitride.

18. A process as recited in claim 1, further comprising, after laser ablating a portion of said diffusion barrier layer, establishing an electrical connection between an external lead and said substantially planar surface of said diffusion barrier.

19. A process as recited in claim 2, further comprising, after laser ablating a portion of said diffusion barrier layer, attaching a lead frame directly upon said layer of organic material.

20. A process as recited in claim 19, wherein attaching said lead frame comprises:

providing an adhesive surface on said layer of organic material;

positioning said lead frame on said adhesive surface; and

exposing both of said adhesive surface and said lead frame to a temperature sufficient to form an adhesive bond between said layer of organic material and said lead frame.

21. A process as recited in claim 19, further comprising, after attaching said lead frame to said layer of organic material, forming an encapsulating layer of molding compound upon said layer of organic material.

22. A process for exposing a surface of a metal-containing layer, said process comprising:

providing a semiconductor substrate having a metal-containing layer;

providing a silicon-containing layer upon said metal-containing layer, said silicon-containing layer containing at least one of silicon dioxide and silicon nitride, said silicon-containing layer being substantially transparent to electromagnetic radiation having a second wavelength;

forming a polymeric layer over said silicon-containing layer;

forming a first opening extending through said polymeric layer, said first opening having a bottom defined by said silicon-containing layer, said first opening being formed by directing electromagnetic radiation having a first wavelength onto said polymeric layer such that at least some of said electromagnetic radiation having said first wavelength is absorbed by said polymeric layer, thereby ablating a portion of said polymeric layer; and

forming a second opening extending from said bottom of said first opening through said silicon-containing layer, said second opening being formed by directing electromagnetic radiation having a second wavelength through said first opening and substantially through said silicon-containing layer onto said metal-containing layer, at least some of said electromagnetic radiation having said second wavelength being absorbed by said metal-containing layer such that a portion of said metal-containing layer is ablated, thereby removing a region of said silicon-containing layer positioned upon said metal-containing layer so as to expose said surface of said metal-containing layer.

23. A process as recited in claim 22, wherein said first wavelength is substantially equivalent to said second wavelength.

24. A process as recited in claim 22, wherein said surface of said metal-containing layer is substantially planar.

25. A process as recited in claim 24, wherein said substantially planar surface of said metal-containing layer has a maximum peak-to-peak surface roughness less than about 1%.

26. A process for exposing a surface of a refractory metal nitride layer, said process comprising:

providing a multilayer structure having;

a semiconductor substrate;

a refractory metal nitride layer formed upon said semiconductor substrate;

a silicon dioxide layer formed upon said refractory metal nitride layer;

a silicon nitride layer formed upon said silicon dioxide layer;

a polyimide layer formed over said silicon nitride layer;

forming an opening into said multilayer structure by directing electromagnetic radiation emitted from a laser onto said multilayer structure such that material is successively ablated from said polyimide layer and said silicon nitride layer, said opening having a bottom defined by a surface on said silicon dioxide layer; and

directing said electromagnetic radiation through said opening and substantially through said silicon dioxide layer, said silicon dioxide layer being substantially transparent to said electromagnetic radiation, most of said electromagnetic radiation reaching and being absorbed by a portion of said refractory metal nitride layer such that said portion of said refractory metal nitride layer is ablated, a region of said silicon dioxide layer that is positioned substantially upon said refractory metal nitride layer being removed, thereby exposing a surface of said refractory metal nitride layer.

27. A process as recited in claim 26, wherein said surface of said refractory metal nitride layer has a maximum peak-to-peak surface roughness less than about 1%.

28. A process for forming a first opening and a second opening in a multilayer structure, said process comprising:

providing a multilayer structure having;

a semiconductor substrate;

a first surface feature on said semiconductor substrate, said first surface feature having a metal-containing layer;

a second surface feature on said semiconductor substrate, said second surface feature having a metal-containing layer;

a silicon dioxide layer upon both of said first surface feature and said second surface feature, said silicon dioxide layer having a first region positioned upon said first surface feature and having a second region positioned upon said second surface feature; and

a silicon nitride layer formed upon said silicon dioxide layer, said silicon nitride layer having a first region positioned upon said first region of said silicon dioxide layer, said silicon nitride layer further having a second region positioned upon said second region of said silicon dioxide layer;

directing electromagnetic radiation emitted from a laser onto said first region of said silicon nitride layer such that said first region of said silicon nitride layer is ablated, thereby forming a first opening in said multilayer structure having a bottom defined by said silicon dioxide layer; and

directing electromagnetic radiation emitted from laser onto said second region of said silicon nitride layer such that said second region of said silicon nitride layer is ablated, said electromagnetic radiation reaching and substantially passing through said second region of said silicon dioxide layer, said electromagnetic radiation further reaching said second surface feature, a portion of said second surface feature being ablated, thereby removing said second region of said silicon dioxide layer so as to form a second opening in said multilayer structure.

29. A process as recited in claim 28, wherein said electromagnetic radiation reaching and ablating said second surface feature forms a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

30. A process for packaging a semiconductor substrate, said process comprising:

providing a semiconductor substrate having a metal-containing bond pad;

forming a passivation layer upon said metal-containing bond pad;

directing electromagnetic radiation from a laser through said passivation layer onto said metal-containing bond pad, said passivation layer being substantially transparent to said electromagnetic radiation, a portion of said metal-containing bond pad being ablated, thereby removing a portion of said passivation layer that is positioned upon said metal-containing bond pad so as to expose said metal-containing bond pad;

positioning a lead frame near said semiconductor substrate, said lead frame having an external electrical lead, said lead frame being electrically isolated from said semiconductor substrate with a dielectric material; and

attaching wiring between said metal-containing bond pad and said external electrical lead.

31. A process as recited in claim 30, wherein said exposed metal-containing bond pad has a surface thereon having a maximum peak-to-peak surface roughness less than about 1% to which said wiring between said metal-containing bond pad and said external electrical lead is attached.

32. A process for packaging a semiconductor substrate, said process comprising:

providing a semiconductor substrate having both a bond pad that contains metal and a fuse line that contains metal;

providing a silicon dioxide layer upon both of said bond pad and said fuse line, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength, said silicon dioxide layer having a first portion positioned upon said fuse line and having a second portion positioned upon said bond pad;

providing a silicon nitride layer upon said silicon dioxide layer, said silicon nitride layer having a first portion positioned upon said first portion of said silicon dioxide layer, said silicon nitride layer further having a second portion positioned upon said second portion of said silicon dioxide layer;

laser ablating said first portion of said silicon nitride layer, thereby exposing said first portion of said silicon dioxide layer;

laser ablating said second portion of said silicon nitride layer, thereby exposing said second portion of said silicon dioxide layer; and

laser ablating a portion of said metal-containing bond pad using electromagnetic radiation having said selected wavelength, thereby removing said second portion of said silicon dioxide layer.

33. A process as recited in claim 32, wherein laser ablating said a portion of said metal-containing bond pad forms a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

34. A process for providing stress buffering for a semiconductor substrate, said process comprising:

providing a semiconductor substrate having a metal-containing surface feature;

providing a silicon dioxide layer formed upon said semiconductor substrate, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength;

forming a polyimide layer upon said silicon dioxide layer, said polyimide layer having a thickness in a range from about 5 microns to about 100 microns;

directing electromagnetic radiation emitted from a laser onto said polyimide layer such that a portion of said polyimide layer is ablated, thereby forming an opening in said polyimide layer;

emitting from a laser electromagnetic radiation having said selected wavelength, said electromagnetic radiation being directed through said opening and substantially through said silicon dioxide layer onto said metal-containing surface feature such a portion of said metal-containing surface feature is ablated, a region of said silicon dioxide layer positioned upon said metal-containing surface feature being removed, whereby said metal-containing surface feature is exposed; and

encapsulating both of said semiconductor substrate and said polyimide layer with a polymeric molding compound, said polyimide layer providing stress buffering for said semiconductor substrate.

35. A process as recited in claim 34, wherein said metal-containing surface feature ablated and exposed by said laser electromagnetic radiation has a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

36. A process for packaging a semiconductor substrate, said process comprising:

providing a semiconductor substrate having a metal-containing bond pad;

providing a passivation layer upon said semiconductor substrate, said passivation layer being substantially transparent to electromagnetic radiation having a selected wavelength;

forming, upon said passivation layer, a polyimide layer having an exposed surface;

emitting from a laser electromagnetic radiation having said selected wavelength, said electromagnetic radiation being directed onto said polyimide layer such that a portion of said polyimide layer is ablated, said electromagnetic radiation further being directed through said passivation layer onto said metal-containing bond pad such that a portion of said metal-containing bond pad is ablated, a region of said passivation layer upon said metal-containing bond pad being removed, whereby an opening is formed that extends through said polyimide layer and said passivation layer; and

attaching a lead frame directly to said exposed surface of said polyimide layer.

37. A process as recited in claim 36, wherein said metal-containing bond pad ablated and exposed by said laser electromagnetic radiation has a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

38. A process for forming a plurality of openings in a multilayer structure, said process comprising:

providing said multilayer structure containing;

a semiconductor substrate having a metal-containing surface feature;

a silicon dioxide layer upon said metal-containing surface feature, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength;

a silicon nitride layer upon said silicon dioxide layer; and

a polyimide layer upon said silicon nitride layer;

laser ablating a first portion of said polyimide layer, thereby forming a first opening having a bottom defined by said silicon nitride layer;

laser ablating successively a second portion of said polyimide layer and a first portion of said silicon nitride layer positioned under said second portion of said polyimide layer, thereby forming a second opening having a bottom defined by said silicon nitride layer;

laser ablating successively a third portion of said polyimide layer and a second portion of said silicon nitride layer positioned under said third portion of said polyimide layer, thereby forming a third opening having a bottom defined by said silicon nitride layer; and

extending said third opening to said metal-containing surface feature by directing said electromagnetic radiation having said selected wavelength through said third opening, said electromagnetic radiation substantially reaching said metal-containing surface feature such that a portion of said metal-containing surface feature is ablated, whereby a portion of said silicon dioxide layer that is upon said metal-containing surface feature is removed.

39. A process as recited in claim 38, wherein said metal-containing surface feature ablated and exposed by said electromagnetic radiation has a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

40. A process for packaging a semiconductor substrate, said process comprising:

providing a semiconductor substrate having internal circuitry, a bond pad, and a fuse line, each of the bond pad and the fuse line containing metal;

providing a silicon dioxide layer upon both of said bond pad and said fuse line, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength, said silicon dioxide layer having a first portion positioned upon said bond pad and having a second portion positioned upon said fuse line;

providing a silicon nitride layer upon said silicon dioxide layer, said silicon nitride layer having a first portion positioned upon said first portion of said silicon dioxide layer, said silicon nitride layer further having a second portion positioned upon said second portion of said silicon dioxide layer;

forming a polyimide layer upon said silicon nitride layer, said polyimide layer having a first portion positioned upon said first portion of said silicon nitride layer, said polyimide layer further having a second portion positioned upon said second portion of said silicon nitride layer;

exposing said bond pad, including;

laser ablating said first portion of said polyimide layer;

laser ablating said first portion of said silicon nitride layer; and

laser ablating a portion of said bond pad using electromagnetic radiation having said selected wavelength, said first portion of said silicon dioxide layer thereby being removed;

exposing said second portion of said silicon dioxide layer, including;

laser ablating said second portion of said polyimide layer; and

laser ablating said second portion of said silicon nitride layer;

attaching a lead frame directly to said polyimide layer, said lead frame having an external lead;

attaching wiring between said bond pad and said external electrical lead;

testing said internal circuitry for a defective circuit;

disabling said defective circuit by activating said fuse line; and

encapsulating both of said semiconductor substrate and said polyimide layer with a polymeric molding compound.

41. A process as recited in claim 40, wherein laser ablating said portion of said bond pad forms a surface thereon having a maximum peak-to-peak surface roughness less than about 1%.

42. A process as recited in claim 40, wherein said polyimide layer has a modulus of elasticity that is lower than that of said polymeric molding compound.