Ion implanter with post mass selection deceleration

• US 5,932,882 A
• Filed: 09/08/1997
• Issued: 08/03/1999
• Est. Priority Date: 11/08/1995
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated, Intel Corporation
• Original Assignee: Applied Materials Incorporated
• Inventors: England, Jonathan Gerald, Adibi, Babak, Taylor, Mitchell C.
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US08/860,749
• Time in Patent Office: 694 Days
• Field of Search: 250/492.21, 250/398, 250/396 R
• US Class Current: 250/492.21
• CPC Class Codes: H01J 2237/04756 with electrostatic means
• CPC Class Codes: H01J 37/3007 Electron or ion-optical systems
• CPC Class Codes: H01J 37/3171 for ion implantation

Abstract

A decel lens assembly (9) located between the mass selection flight tube and the substrate holder comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential and a field electrode (61) between the two at a negative potential to provide focusing. The axial spacing in the beam direction between the first and second electrodes is less than the smallest transverse dimension of the field electrode. The decel lens assembly (9) is mounted directly opposite the outlet from the process chamber to the vacuum pump to maximize evacuation efficiency. An additional screening electrode (56) is provided between the second electrode of the decel lens assembly and the exit aperture of the mass selector. A perforated screening cylinder (54) is mounted on the light tube with the second electrode of the lens assembly mounted at the down beam end of the cylinder. A first electrode has a cylindrical screening flange extending around the field electrode. A further screening electrode is located at the entrance to the electron confinement tube of the PFS system.

Claims

1. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a substrate holder for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate beam ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential, a second apertured plate electrode connected to be substantially at the flight tube potential and a field electrode having a beam aperture and located between and adjacent to each of said first and second apertured plate electrodes, a potential bias supply connected to bias said field electrode to have the same polarity relative to each of said first and second electrodes the electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, said first and second electrodes being spaced apart in the beam direction by a distance less than the smallest transverse dimension of the beam aperture of the field electrode.

2. An ion implanter as claimed in claim 1, and further including mass selection apparatus in the flight tube to select a desired mass of ions for transmission in the ion beam from the flight tube, said mass selection apparatus including an electromagnetic screen at the flight tube potential to screen the mass selection apparatus from electric fields generated downstream in the beam direction, said screen providing an exit aperture for said mass selected ion beam from the flight tube.

3. An ion implanter as claimed in claim 2, and including at least one additional mass selection apparatus screening electrode comprising an apertured plate at the flight tube potential located between said second electrode and said exit aperture.

4. An ion implanter as claimed in claim 3, and including a screening cylinder mounted on the flight tube at the flight tube potential and extending axially towards said field electrode to contain the ion beam, said second apertured plate electrode being mounted on the end of the screening cylinder adjacent to the field electrode and said screening cylinder being perforated to assist evacuation of the interior of the cylinder.

5. An ion implanter as claimed in claim 4 wherein the apertured plate forming said additional screening electrode is located in said screening cylinder.

6. An ion implanter as claimed in claim 1 and including neutralisation apparatus located between the substrate holder and said first electrode to provide a supply of low energy charged species opposite polarity to the beam ions for neutralising surface charge build-up on the substrate during implantation.

7. An ion implanter as claimed in claim 6 and including a neutralisation apparatus screen electrode comprising an apertured plate located between said first electrode and said neutralisation apparatus.

8. An ion implanter as claimed in claim 6, wherein said first apertured plate electrode has a cylindrical screening flange extending axially from the first electrode towards said field electrode and the field electrode is mounted inside the flange so that the flange surrounds the outer periphery of the field electrode.

9. An ion implanter as claimed in claim 1, and including a process chamber containing said substrate holder and having an outlet port, and a vacuum pump connected to said outlet port for evacuating the process chamber, wherein said deceleration lens assembly is located directly in front of said outlet port to the vacuum pump.

10. An ion implanter as claimed in claim 1, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

11. An ion implanter as claimed in claim 1, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

12. An ion implanter as claimed in claim 1, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

13. An ion implanter as claimed in claim 1, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

14. An ion implanter as claimed in claim 1, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.

15. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a process chamber having an outlet port, a vacuum pump connected to said outlet port for evacuating the process chamber, a substrate holder in the process chamber for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential and a field electrode located adjacent and upstream in the beam direction relative to said first electrode, and a potential bias supply connected to bias said field electrode relative to said first electrode, said electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, wherein said deceleration lens assembly is located directly in front of said outlet port to the vacuum pump.

16. An ion implanter as claimed in claim 15, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

17. An ion implanter as claimed in claim 15, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

18. An ion implanter as claimed in claim 15, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

19. An ion implanter as claimed in claim 15, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

20. An ion implanter as claimed in claim 15, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.

21. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a substrate holder for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate beam ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential, and a field electrode located adjacent and upstream in the beam direction relative to said first electrode, a potential bias supply connected to bias said field electrode relative to said first electrode, said electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, said deceleration lens assembly further including a second apertured plate electrode connected to be substantially at the flight tube potential and located adjacent and upstream in the beam direction relative to said field electrode, mass selection apparatus in the flight tube to select a desired mass of ions for transmission in the ion beam from the flight tube, said mass selection apparatus including an electromagnetic screen at the flight tube potential to screen the mass selection apparatus from electric fields generated downstream in the beam direction, said screen providing an exit aperture for said mass selected ion beam from the flight tube, and at least one additional mass selection apparatus screening electrode comprising an apertured plate at the flight tube potential located between said second electrode and said exit aperture.

22. An ion implanter as claimed in claim 21, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

23. An ion implanter as claimed in claim 21, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

24. An ion implanter as claimed in claim 21, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

25. An ion implanter as claimed in claim 21, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

26. An ion implanter as claimed in claim 21, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.

27. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a substrate holder for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate beam ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential, and a field electrode located adjacent and upstream in the beam direction relative to said first electrode, a potential bias supply connected to bias said field electrode relative to said first electrode, said electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, said deceleration lens assembly further including a second apertured plate electrode connected to be substantially at the flight tube potential and located adjacent and upstream in the beam direction relative to said field electrode, mass selection apparatus in the flight tube to select a desired mass of ions for transmission in the ion beam from the flight tube, said mass selection apparatus including an electromagnetic screen at the flight tube potential to screen the mass selection apparatus from electric fields generated downstream in the beam direction, said screen providing an exit aperture for said mass selected ion beam from the flight tube, and a screening cylinder mounted on the flight tube at the flight tube potential and extending axially towards said field electrode to contain the ion beam, said second apertured plate electrode being mounted on the end of the screening cylinder adjacent to the field electrode and said screening cylinder being perforated to assist evacuation of the interior of the cylinder.

28. An ion implanter as claimed in claim 27, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

29. An ion implanter as claimed in claim 27, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

30. An ion implanter as claimed in claim 27, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

31. An ion implanter as claimed in claim 27, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

32. An ion implanter as claimed in claim 27, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.

33. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a substrate holder for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate beam ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential, and a field electrode located adjacent and upstream in the beam direction relative to said first electrode, a potential bias supply connected to bias said field electrode relative to said first electrode, said electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, and neutralisation apparatus located between the substrate holder and said first electrode to provide a supply of low energy charged species of opposite polarity to the beam ions for neutralising surface charge build-up on the substrate during implantation, wherein said first apertured plate electrode has a cylindrical screening flange extending axially from the first electrode towards said field electrode and the field electrode is mounted inside the flange so that the flange surrounds the outer periphery of the field electrode.

34. An ion implanter as claimed in claim 33, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

35. An ion implanter as claimed in claim 33, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

36. An ion implanter as claimed in claim 33, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

37. An ion implanter as claimed in claim 33, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

38. An ion implanter as claimed in claim 33, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.

39. An ion implanter for implanting ions into a substrate, comprising an ion beam generator for producing a beam of ions, a flight tube to transport said beam at a transport energy, a substrate holder for holding a substrate to be implanted with beam ions, a deceleration potential generator connected to apply a deceleration potential between the flight tube and the substrate holder to decelerate beam ions to a desired implant energy, a deceleration lens assembly located between the flight tube and the substrate holder and comprising a first apertured plate electrode connected to be substantially at the substrate potential, and a field electrode located adjacent and upstream in the beam direction relative to said first electrode, a potential bias supply connected to bias said field electrode relative to said first electrode, said electrodes being arranged and said bias being such as to provide a focusing field for beam ions passing through said first electrode, neutralisation apparatus located between the substrate holder and said first electrode to provide a supply of low energy charged species of opposite polarity to the beam ions for neutralising surface charge build-up on the substrate during implantation, and a neutralisation apparatus screening electrode comprising an apertured plate located between said first electrode and said neutralisation apparatus.

40. An ion implanter as claimed in claim 39, and including a beam defining aperture located between said field electrode and said ion beam generator which is effective to define the width of the beam in at least one direction normal to the beam direction as the beam passes through the field electrode and said first electrode, wherein said field electrode has an aperture larger in said one direction than the width of the beam in said one direction as the beam passes through said field electrode and said first electrode has an aperture which is sufficiently larger in said one direction than the width of the beam in said one direction as the beam passes through said first electrode that beam ions avoid high radial field components at the periphery of the aperture of the first electrode which would tend to deflect ions out of the beam.

41. An ion implanter as claimed in claim 39, wherein for at least one direction normal to the beam direction the beam aperture of the first electrode is smaller than the beam aperture of said field electrode.

42. An ion implanter as claimed in claim 39, wherein said potential bias supply is arranged to provide a bias such that said field electrode is at a negative potential of more than 5 kV relative to the flight tube.

43. An ion implanter as claimed in claim 39, wherein said field electrode is cylindrical with its axis in the beam direction and has a length at least 10% of the smallest transverse dimension of the cylinder.

44. An ion implanter as claimed in claim 39, and including a magnet for resolving spatially the beam ions according to their mass, a process chamber containing said substrate holder and having an outlet port, a first vacuum pump connected to said outlet port for evacuating the process chamber, a mass selection chamber between said process chamber and said magnet, a second vacuum pump connected to evacuate said mass selection chamber, an aperture for the beam to pass from the mass selection chamber to the process chamber and at least one further aperture between said mass selection chamber and said process chamber to improve evacuation of one or the other of said chambers.