ESD protection clamp for mixed voltage I/O stages using NMOS transistors

• US 5,932,918 A
• Filed: 05/04/1998
• Issued: 08/03/1999
• Est. Priority Date: 11/13/1995
• Status: Expired due to Term

• Current Assignee: MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
• Original Assignee: Digital Equipment Corporation (HP Inc.)
• Inventors: Krakauer, David Benjamin
• Primary Examiner(s): WHITEHEAD JR, CARL W
• Application Number:
  US09/072,129
• Time in Patent Office: 456 Days
• Field of Search: 330/250, 330/277, 330/278, 307/89, 307/90, 307/91, 438/197, 438/216, 438/542, 438/547, 438/543, 438/546, 438/548, 257/368, 257/363, 257/486, 257/606, 257/603, 257/355, 257/481, 257/551, 327/94, 327/100, 327/112, 327/375
• US Class Current: 257/368
• CPC Class Codes: H01L 27/0266 using field effect transistors as protective elements

Abstract

An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least one pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first transistor, having a drain region coupled to an I/O stage of the mixed voltage integrated circuit, and a gate region coupled to the mixed voltage integrated circuit'"'"'s low power supply. The protection device also includes a second NMOS transistor, merged into the same active area as the first transistor, having a gate region and source region coupled to the ground plane of the mixed voltage integrated circuit. The drain region of the second transistor and the source region of the first transistor is constructed by a shared NMOS diffusion region. This shared diffusion region also constructs the common node coupling the source region of the first transistor to the drain region of the second. The shared diffusion area is a further benefit of the invention because its length controls the trigger voltage and the holding voltage of each cascode configured transistor pair. This electrostatic discharge protection device can be used either as a self protecting pull-down portion of a mixed voltage I/O stage or, in a further aspect of the present invention, as a separate electrostatic discharge clamp.

Claims

1. A method for protecting a mixed voltage integrated circuit from damage caused by electrostatic discharge, said method comprising the steps of:

disposing at least one pair of cascode configured NMOS transistors in a mixed voltage integrated circuit wherein each pair of said NMOS transistors are merged into the same active area;

constructing a shared diffusion region to couple each pair of said NMOS transistors, said shared diffusion region constructing a drain region of a first transistor of said pair of NMOS transistors and a source region of a second transistor of said pair of NMOS transistors.

2. The method of claim 1 further comprising the step of:

regulating the trigger voltage level and holding voltage level of said NMOS transistors by changing the length of said shared diffusion.

3. The method of claim 2 further comprising the step of:

coupling said cascode configuration of NMOS transistors to an input stage of said mixed voltage integrated circuit.

4. The method of claim 2 further comprising the step of:

coupling said cascode configuration of NMOS transistors to an output stage of said mixed voltage integrated circuit.

5. The method of claim 2 further comprising the step of:

coupling said cascode configuration of NMOS transistors to an input/output stage of said mixed voltage integrated circuit.