Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry

• US 5,933,190 A
• Filed: 04/18/1996
• Issued: 08/03/1999
• Est. Priority Date: 04/18/1995
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: IMEC International
• Inventors: Ricquier, Nico, Dierickx, Bart
• Primary Examiner(s): GARBER, WENDY RAE
• Application Number:
  US08/635,035
• Time in Patent Office: 1,202 Days
• Field of Search: 348/300, 348/301, 348/302, 348/308
• US Class Current: 348/302
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/573 the logarithmic type
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A pixel structure for CMOS imaging applications, the pixel structure including a photosensitive element, a load transistor in series with the photosensitive element, a first reading transistor, coupled to the photosensitive element and to the load transistor, for reading out signals acquired in the photosensitive element and converting the signals to a voltage drop across the load transistor. The gate length of at least the load transistor is increased by at least 10% compared to a gate length of transistors manufactured according to layout rules imposed by a CMOS manufacturing process, thereby increasing the light sensitivity of the pixel structure.

Claims

1. A pixel structure for use in an image sensor manufactured in CMOS technology in accordance with layout rules defined for a specific CMOS manufacturing process, the pixel structure comprising:

a photosensitive element;

a load transistor in series with the photosensitive element, the load transistor having a gate;

means comprising at least another transistor, coupled to said photosensitive element and said load transistor, for reading out signals acquired in said photosensitive element and converted to a voltage drop across said load transistor, wherein at least the gate of the load transistor has a length which is at least 10% larger than a gate length of transistors including at least said another transistor, manufactured according to the layout rules of the specific CMOS manufacturing process, thereby increasing the light sensitivity of said pixel structure.

2. A CMOS image sensor having a geometric configuration of pixels consisting of a structure as claimed in claim 1, each pixel having at least one photodiode and a load transistor having its gate tied to a voltage and wherein the read-out means comprise at least a second transistor which is an emitter-follower connected to a data read-out line.

3. A CMOS image sensor having a geometric configuration of pixels consisting of a structure as claimed in claim 1, each pixel having at least one photodiode and a load transistor having a drain which is not tied to a voltage and wherein the read-out means comprise a second transistor and a third transistor which functions as a switch and is connected to a data read-out line.

4. A CMOS image sensor having a geometric configuration of pixels consisting of a structure as claimed in claim 1, each pixel having at least one photodiode and a load transistor and read-out means comprising only another transistor, said pixel being read-out in both X - Y, and Y - X modes.

5. A CMOS image sensor having a geometric configuration of pixels comprising a structure as claimed in claim 1 characterized in that each pixel includes only a photodiode and a switch, the load transistor and the readout means being common for one unit of several individual pixels.

6. A CMOS image sensor as claimed in claim 1 further comprising at least one pseudopixel comprising a current source instead of a photodiode, in order to determine the absolute light intensity of the pixels.

7. A CMOS image sensor as claimed in claim 1 further comprising defined groups of (n×

m) pixels yielding one output voltage signal, said output voltage signal being an average or minimized value of the individual output voltage signals of non-defective pixels in one group.

8. A CMOS image sensor as claimed in claim 1 further comprising a mosaic color filter which has preferably the structure of the pixel array.

9. A method for increasing light sensitivity of a pixel structure for use in an image sensor manufactured in CMOS technology in accordance with layout rules defined for a specific CMOS manufacturing process, comprising the steps of:

providing a photosensitive element;

providing a load transistor having a gate, the gate having a length which is at least 10% larger than gate lengths of transistors manufactured according to the layout rules imposed by the specific CMOS manufacturing process;

connecting the photosensitive element in series with the load transistor;

coupling a read circuit, comprising at least another transistor, to the photosensitive element and the load transistor, the read circuit configured to read out signals acquired in the photosensitive element and converted to a voltage drop across the load transistor.