Thin film resonant chemical sensor with resonant acoustic isolator

• US 5,936,150 A
• Filed: 04/13/1998
• Issued: 08/10/1999
• Est. Priority Date: 04/13/1998
• Status: Expired due to Term

• Current Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Original Assignee: Rockwell Science Center LLC
• Inventors: Kobrin, Paul H., Harker, Alan B., O'Toole, Ronald P., Seabury, Charles W.
• Primary Examiner(s): Williams, Hezron
• Assistant Examiner(s): Politzer, Jay L.
• Application Number:
  US09/063,307
• Time in Patent Office: 484 Days
• Field of Search: 73/24.06, 310/324, 310/311, 310/321, 310/338, 310/313 D, 310/187
• US Class Current: 73/24.06
• CPC Class Codes: G01N 2291/0255 (Bio)chemical reactions, e.g. on biosensors
• CPC Class Codes: G01N 2291/0256 Adsorption, desorption, surface mass change, e.g. on biosensors
• CPC Class Codes: G01N 2291/0426 Bulk waves, e.g. quartz crystal microbalance, torsional waves
• CPC Class Codes: G01N 29/022 Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices microdevices per se B81B
• CPC Class Codes: G01N 29/036 by measuring frequency or resonance of acoustic waves
• CPC Class Codes: G01N 5/02 by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content absorption bulbs B01D53/00

Abstract

A miniature chemical sensor using a thin film acoustic resonator coated with a chemically sensitive sorbent coating. The thin film acoustic resonator has electrodes separated by a thin piezoelectric layer and is supported by a multilayer resonant acoustic isolator. The resonant acoustic isolator has alternating layers of high and low acoustic impedance material, each layer being one quarter acoustic wavelength thick or an odd multiple thereof at the resonant frequency. The resonant acoustic isolator is solidly mounted on a substrate but provides acoustic isolation between the thin film acoustic resonator and the substrate at a resonant frequency.

Claims

1. A chemical sensor for sensing chemicals in an environment, comprising:

a substrate;

a chemically sensitive thin-film acoustic resonator, comprising;

a piezoelectric resonator having an acoustic resonance quality, and

an organic coating on a surface of said piezoelectric resonator and exposed to the environment, said coating and said piezoelectric resonator together having an acoustic resonance quality less than that of said piezoelectric resonator by itself; and

a resonant acoustic isolator, interfacing between said chemically sensitive thin film acoustic resonator and said substrate and having a resonant frequency substantially matching that of said thin film acoustic resonator, thereby acoustically isolating said chemically sensitive thin film acoustic resonator from said substrate at said resonant frequency.

2. The chemical sensor of claim 1, wherein said resonant acoustic isolator comprises alternating low acoustic impedance layers and high acoustic impedance layers,

and wherein said piezoelectric resonator has a thin piezoelectric film with a thickness substantially equal to an integer multiple of a half wavelength of a bulk acoustic wave propagating normal to the surface of said film at said resonant frequency.

3. The chemical sensor of claim 2, wherein said integer multiple of a half wavelength equals one-half wavelength, and wherein said resonant frequency is in the range of 1-10 Gigahertz.

4. The chemical sensor of claim 3, wherein each of said low acoustic impedance layers and high acoustic impedance layers has a thickness substantially equal to an odd integer multiple of one-quarter acoustic wavelength at the resonant frequency of said thin film acoustic resonator.

5. The chemical sensor of claim 4, wherein said coating has a thickness in the range of 20 to 100 nanometers.

6. The chemical sensor of claim 3, further comprising a temperature compensating material on said electrodes with positive temperature coefficient of acoustic velocity that compensates for a a negative temperature coefficient of acoustic velocity of said piezoelectric material.

7. The chemical sensor of claim 6, wherein said compensating material comprises silicon dioxide (SiO₂).

8. The chemical sensor of claim 7, wherein said high acoustic impedance layers comprise hafnium oxide (HfO₂).

9. A chemical sensor array for sensing chemicals in an environment, comprising:

a common substrate;

a plurality of chemical sensors, fabricated on said common substrate, each chemical sensor comprising;

a chemically sensitive thin-film acoustic resonator, comprising;

(a) a piezoelectric resonator having an acoustic resonance quality, and

(b) an organic coating on a surface of said piezoelectric resonator and exposed to the environment, said coating and said piezoelectric resonator together having an acoustic resonance quality less than that of said piezoelectric resonator by itself, and

a resonant acoustic isolator, interfacing between said chemically sensitive thin film acoustic resonator and said common substrate and having a resonant frequency substantially matching that of said thin film acoustic resonator, said acoustic isolator acoustically isolating said chemically sensitive thin film acoustic resonator from said common substrate at said resonant frequency.

10. The sensor array of claim 9, wherein said resonant acoustic isolators comprise alternating low acoustic impedance layers and high acoustic impedance layers,

and wherein said piezoelectric layer has a thickness substantially equal to an integer multiple of a half wavelength for a bulk acoustic wave propagating normal to the surface of said resonator'"'"'s thin film at said resonant frequency.

11. The sensor array of claim 10, wherein said resonant frequency is in the 1-10 Gigahertz range.

12. The sensor array of claim 11, wherein said sensors share a common resonant acoustic isolator.

13. The sensor array of claim 12, wherein said sensors share a common bottom electrode.

14. The sensor array of claim 13, wherein said sensors share a common piezoelectric layer.