Magneto-resistive magnetic field sensor with a constricted region

• US 5,936,402 A
• Filed: 06/11/1997
• Issued: 08/10/1999
• Est. Priority Date: 06/12/1996
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Gijs, Martinus A.M., Schep, Cornelis M.
• Primary Examiner(s): STRECKER, GERARD R
• Application Number:
  US08/873,258
• Time in Patent Office: 790 Days
• Field of Search: 324/207.21, 324/252, 360/113, 338/32 R
• US Class Current: 324/252
• CPC Class Codes: G01R 33/09 Magnetoresistive devices

Abstract

Two magnetic layers are mutually interconnected by a constricted region also made of a magnetic material. The layers may be separated by an intermediate non-metallic layer having a hole filed with magnetic material to from the constricted region. Alternatively, the layers and constricted region may be substantially co-planar. The constricted region minimum cross-section dimension preferably is less than one micron, and ideally of the order of 100 nm, thus being much smaller than the diameter of a magnetic domain. A high magneto-resistance ratio is obtained, and electrical and magnetic properties of the sensor can be adjusted largely independently.

Claims

1. A magneto-resistive magnetic field sensor, comprising two electrical connections and a body of magnetic material, said body being arranged to form at least a part of an electrically conductive path between said electrical connections, the electrical resistance of said path being a measure of magnetic field strength in at least a portion of said body, characterized in that said body comprises two layers of magnetic material interconnected by a constricted region formed of magnetic material, said constricted region being part of said current path and having a direction of sensing current flow through the constriction, each of said layers having a respective volume and the constricted region having a volume much less than the smaller of said respective volumes.

2. A sensor as claimed in claim 1, characterized in that the sensor further comprises at least one flux guide arranged to concentrate magnetic flux from an external source into the vicinity of said magnetic layers.

3. A sensor as claimed in claim 1, characterized in that the magnetic layers and the constricted region are formed by a single magnetic material.

4. A sensor as claimed in claim 3, characterized in that said magnetic material is selected from the group consisting of Fe, Co, Ni and their alloys, together with Fe₃ O₄ and PtMnSb.

5. A sensor as claimed in claim 1, characterized in that said layers are parallel and spaced apart, in a direction perpendicular to the layers, by said constricted region, and

said constriction has a cross section, in a direction parallel to said layers, having a least dimension w_c which is less than one micron.

6. A sensor as claimed in claim 5, characterized in that the sensor further comprises at least one flux guide arranged to concentrate magnetic flux from an external source into the vicinity of said magnetic layers.

7. A sensor as claimed in claim 1, characterized in that said constricted region is formed of a given magnetic material having an average magnetic domain size D, and

said constricted region has a cross section, in a direction perpendicular to the direction of current flow through said constriction, having a least dimension w_c which is less than one micron, whereby the dimension w_c <

<

D, and the magnetic system formed by the two magnetic layers and the constricted region contains only one domain wall.

8. A sensor as claimed in claim 7, characterized in that the sensor further comprises at least one flux guide arranged to concentrate magnetic flux from an external source into the vicinity of said magnetic layers.

9. A sensor as claimed in claim 7, characterized in that w_c ≦

100 nm.

10. A sensor as claimed in claim 3, characterized in that said two layers are arranged in a stack, and are separated by an intermediate non-metallic layer having a hole therethrough, said hole being filled with the magnetic material forming said constricted region.

11. A sensor as claimed in claim 10, characterized in that the non-metallic material is selected from the group consisting of silicon, silicon oxide, silicon nitride and aluminum oxide.

12. A sensor as claimed in claim 3, characterized in that said layers and the constricted region are substantially co-planar.

13. A sensor as claimed in claim 12, characterized in that the magnetic layers and the constricted region are formed by a single magnetic material.

14. A sensor as claimed in claim 13, characterized in that said magnetic material is selected from the group consisting of Fe, Co, Ni and their alloys, together with Fe₃ O₄ and PtMnSb.

15. A sensor as claimed in claim 12, characterized in that the sensor further comprises at least one flux guide arranged to concentrate magnetic flux from an external source into the vicinity of said magnetic layers.

16. A sensor as claimed in claim 12, characterized in that said constricted region is formed of a given magnetic material having an average magnetic domain size D, and

said constricted region has a cross section, in a direction perpendicular to the direction of current flow through said constriction, having a least dimension w_c which is less than one micron, whereby the dimension w_c <

<

D.

17. A sensor as claimed in claim 16, characterized in that w_c ≦

100 nm.