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Method of producing acceleration sensors

  • US 5,937,275 A
  • Filed: 10/27/1997
  • Issued: 08/10/1999
  • Est. Priority Date: 07/21/1995
  • Status: Expired due to Term
First Claim
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1. A method for producing sensors, especially acceleration sensors in which on a substrate (1) with a sacrificial layer (2), in an epitaxial application system, a silicon layer (4) is deposited that is deposited above the sacrificial layer (2) as a polysilicon layer (6), a first photoresist layer (7) being applied to the polysilicon layer (6) and being structured by optical methods as an etching mask, and structures (8) being introduced into the polysilicon layer (6) through the etching mask, which structures extend from the top side of the polysilicon layer (6) as far as the sacrificial layer (2), a sacrificial layer (2) being removed from beneath the structures (8), characterized in that the surface of the polysilicon layer (6) is post-machined in a smoothing process before the first photoresist layer (7) is applied.

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