Method of producing acceleration sensors

• US 5,937,275 A
• Filed: 10/27/1997
• Issued: 08/10/1999
• Est. Priority Date: 07/21/1995
• Status: Expired due to Term

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Offenberg, Michael, Vossenberg, Heinz-Georg, Munzel, Horst, Lutz, Markus, Graf, Eckhard, Heyers, Klaus, Buchan, Nicholas, Elsner, Bernhard, Skapa, Helmut
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): SULSKY, MARTIN S
• Application Number:
  US08/809,945
• Time in Patent Office: 652 Days
• Field of Search: 438/50, 438/51, 438/52, 438/53, 73/514.01, 73/514.16, 73/662, 310/329
• US Class Current: 438/50
• CPC Class Codes: G01P 15/0802 Details

Abstract

A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.

Claims

1. A method for producing sensors, especially acceleration sensors in which on a substrate (1) with a sacrificial layer (2), in an epitaxial application system, a silicon layer (4) is deposited that is deposited above the sacrificial layer (2) as a polysilicon layer (6), a first photoresist layer (7) being applied to the polysilicon layer (6) and being structured by optical methods as an etching mask, and structures (8) being introduced into the polysilicon layer (6) through the etching mask, which structures extend from the top side of the polysilicon layer (6) as far as the sacrificial layer (2), a sacrificial layer (2) being removed from beneath the structures (8), characterized in that the surface of the polysilicon layer (6) is post-machined in a smoothing process before the first photoresist layer (7) is applied.

2. The method of claim 1, characterized in that the smoothing process is effected in that a photoresist (9) is applied, and an etching process is performed which etches the polysilicon layer (6) and the photoresist (9) at approximately the same etching rate.

3. The method of claim 2, characterized in that after etching of the photoresist (9), a further layer of photoresist (9) is applied and a further etching process is formed.

4. The method of claim 2, characterized in that the etching process is performed as a plasma etching process.

5. The method of claim 1, characterized in that the smoothing process is effected by chemical-mechanical polishing.

6. The method of claim 1, characterized in that a polysilicon starter layer (3) is deposited on the sacrificial layer (2) before the deposition of the silicon layer (4) in the epitaxial application system.

7. The method of claim 1, characterized in that the sacrificial layer (2) covers the entire surface of the substrate (1).

8. The method of claim 1, characterized in that the sacrificial layer (2) is structured before the deposition of the silicon layer (4) in the epitaxial application system.

9. The method of claim 8, characterized in that the substrate (1) comprises monocrystalline silicon, and that the silicon layer (4), in those regions where no sacrificial layer (2) is provided, grows in the form of a monocrystalline silicon layer (5).

10. The method of claim 9, characterized in that the smoothing step of the polysilicon layer (6) is performed until such time as the polycrystalline silicon layer (6) and the monocrystalline silicon layer (5) form a common, flat surface.

11. The method of claim 10, characterized in that electronic circuits (12) are formed in the monocrystalline silicon layer (5), and that on the common, flat surface, conductor tracks (11) are provided, extending from the circuits (12) as far as the polysilicon layer (6).

12. The method of claim 1, characterized in that after the smoothing process, a small shoulder remains between the polysilicon layer (6) and the monocrystalline silicon layer (5), which shoulder is used as an adjusting mark.