Method of producing acceleration sensors
First Claim
1. A method for producing sensors, especially acceleration sensors in which on a substrate (1) with a sacrificial layer (2), in an epitaxial application system, a silicon layer (4) is deposited that is deposited above the sacrificial layer (2) as a polysilicon layer (6), a first photoresist layer (7) being applied to the polysilicon layer (6) and being structured by optical methods as an etching mask, and structures (8) being introduced into the polysilicon layer (6) through the etching mask, which structures extend from the top side of the polysilicon layer (6) as far as the sacrificial layer (2), a sacrificial layer (2) being removed from beneath the structures (8), characterized in that the surface of the polysilicon layer (6) is post-machined in a smoothing process before the first photoresist layer (7) is applied.
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Abstract
A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.
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Citations
12 Claims
- 1. A method for producing sensors, especially acceleration sensors in which on a substrate (1) with a sacrificial layer (2), in an epitaxial application system, a silicon layer (4) is deposited that is deposited above the sacrificial layer (2) as a polysilicon layer (6), a first photoresist layer (7) being applied to the polysilicon layer (6) and being structured by optical methods as an etching mask, and structures (8) being introduced into the polysilicon layer (6) through the etching mask, which structures extend from the top side of the polysilicon layer (6) as far as the sacrificial layer (2), a sacrificial layer (2) being removed from beneath the structures (8), characterized in that the surface of the polysilicon layer (6) is post-machined in a smoothing process before the first photoresist layer (7) is applied.
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