Sequencing of the recipe steps for the optimal low-k HDP-CVD processing

• US 5,937,323 A
• Filed: 06/03/1997
• Issued: 08/10/1999
• Est. Priority Date: 06/03/1997
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Murugesh, Laxman, Narwankar, Pravin, Orczyk, Maciek
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): WHIPPLE, MATTHEW LAVERNE
• Application Number:
  US08/868,286
• Time in Patent Office: 798 Days
• Field of Search: 438/784, 438/624, 438/763, 427/573, 427/579
• US Class Current: 438/624
• CPC Class Codes: C03C 2201/12 containing fluorine C03C2201/14 takes precedence
• CPC Class Codes: C03C 2203/46 fluorine containing
• CPC Class Codes: C03C 3/06 with more than 90% silica by weight, e.g. quartz C03C3/045 takes precedence
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31625 Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG

Abstract

A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 μm with an aspect ratio of up to 4.5:1.

Claims

1. A method for forming a film on a substrate in a deposition system chamber, the method comprising:

(a) heating the substrate in the chamber to a temperature of at least about 100°

C.;

(b) flowing a silicon-containing process gas into the chamber under conditions suitable for depositing silicon glass;

(c) forming a layer of undoped silicon glass on the substrate;

(d) flowing a halogen-containing gas into the chamber at a flow rate, while the temperature of the substrate is at least about 100°

C., to form a first portion of a halogen-containing silicon oxide layer on said layer of undoped silicon glass; and

(e) increasing the flow rate of the halogen-containing gas and lowering the temperature of the substrate to form a second portion of the halogen-containing silicon oxide layer.

2. The method of claim 1 wherein said substrate is heated in step 1(a) with a plasma.

3. The method of claim 1 wherein said layer of undoped silicon glass is between about 300 Å

and about 400 Å

thick.

4. The method of claim 1 wherein said first portion of said halogen-containing silicon glass layer is less than about 300 Å

thick.

5. The method of claim 4 wherein said first portion of said halogen-containing silicon glass layer includes a lower-halogen layer less than about 100 Å

thick formed at an onset of said flow of said halogen-containing gas and a higher-halogen layer formed on said lower-halogen layer during a main flow of said flow of said halogen-containing gas.

6. The method of claim 1 wherein said step 1(e) occurs less than about 5 seconds after said step 1(d).

7. The method of claim 1 wherein said halogen-containing gas comprises SiF₄.

8. The method of claim 1 further comprising the step of cooling said substrate by flowing a coolant medium adjacent to a backside of said substrate after said forming of said layer of undoped silicon glass in step 1(c).

9. The method of claim 8 wherein said coolant medium comprises helium gas.

10. The method of claim 1 wherein said layer of undoped silicon glass is between about 150 Å

and about 600 Å

thick.

11. The method of claim 1 wherein said undoped silicon glass layer is significantly thinner than said halogen-containing silicon oxide layer.

12. A method for forming a film on a substrate in a chamber comprising the steps of:

(a) forming and maintaining a plasma in the chamber at an RF power level and at a first chamber pressure for a sufficient time to heat the substrate to a temperature of at least 100°

C.;

(b) flowing a process gas into the chamber to form a first portion of the film;

(c) flowing a halogen-containing gas into the chamber to form a second portion of the film, wherein said second portion is a halogen-doped silicon oxide;

(d) thereafter, reducing said RF power level, thereby reducing said heating of said substrate, and forming a third portion of the film, wherein said third portion is a halogen-doped silicon oxide.

13. The method of claim 12 wherein said halogen-containing gas is SiF₄.

14. The method of claim 12 wherein said substrate is cooled by flowing a coolant medium adjacent to a backside of said substrate after said forming of said first portion of the film in step (b).

15. The method of claim 14 wherein said coolant medium comprises helium gas.

16. The method of claim 12 further comprising, after step (d), increasing a rate of flow of said halogen-containing gas.

17. The method of claim 12 wherein said plasma is a high density plasma.

18. The method of claim 12 wherein said first portion of said film is deposited from a process gas comprising silicon and oxygen atoms.

20. The method of claim 14 wherein said non-halogen containing source gas comprises silane and an oxygen-containing source.

21. The method of claim 20 wherein said halogen-containing gas comprises fluorine atoms.

19. A method for forming a film on a substrate in a high density plasma CVD chamber, the method comprising:

(a) forming a plasma from an inert gas flowed into the chamber to heat the substrate to a temperature between about 100°

C. and 450°

C. wherein said plasma is formed by application of RF energy at a first RF power level to a coil;

(b) flowing a non-halogen-containing source gas into the chamber to form a layer of undoped silicon glass on the substrate;

(c) flowing a coolant medium adjacent to a backside of the substrate;

(d) flowing a halogen-containing gas into the chamber to form a first portion of a halogen-doped silicon glass layer on the layer of said undoped silicon glass while said substrate is at a second temperature above about 100°

C.;

(e) thereafter, reducing said first RF power level, and forming a second portion of the halogen-doped silicon glass layer.

22. The method of claim 19 wherein said layer of undoped silicon glass is significantly thinner than said halogen-doped silicon glass layer.

23. The method of claim 22 wherein said first portion of said halogen-doped silicon glass layer is significantly thinner than said second portion of said halogen-doped silicon glass layer.