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System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides

  • US 5,939,334 A
  • Filed: 05/22/1997
  • Issued: 08/17/1999
  • Est. Priority Date: 05/22/1997
  • Status: Expired due to Term
First Claim
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1. In an integrated circuit (IC) having a dielectric interlevel with a dielectric surface, and a plurality of metal levels underlying the dielectric interlevel, a method for selectively cleaning metal oxides, in-situ, from a surface on a first metal level, accessed through a via from the dielectric surface, the method comprising the steps of:

  • a) providing an atmosphere surrounding the integrated circuit;

    b) controlling the atmosphere to be substantially free of oxygen, whereby the formation of metal oxides on the first metal level surface is minimized;

    c) introducing a β

    -diketone vapor into the atmosphere; and

    d) volatilizing the metal oxides from the first metal level surface using the β

    -diketone vapor introduced in step c), whereby a minimal amount of material is removed from the first metal level surface in preparation for an electrical connection with subsequently deposited metal levels.

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