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Semiconductor detector for infrared radiation and method for manufacturing same

  • US 5,939,722 A
  • Filed: 10/28/1997
  • Issued: 08/17/1999
  • Est. Priority Date: 10/31/1996
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a semiconductor detector for infrared radiation, comprising the steps of:

  • depositing an auxiliary layer on a primary surface of a carrier;

    depositing a membrane layer, with at least one opening therein, onto said auxiliary layer;

    selectively etching said auxiliary layer through said at least one opening in said membrane layer for producing a hollow space in said auxiliary layer;

    sealing said hollow space by depositing a covering over said membrane layer; and

    depositing infrared radiation-sensitive material on said covering within a region of said covering limited by the hollow space therebelow.

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