Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof

• US 5,939,732 A
• Filed: 05/22/1997
• Issued: 08/17/1999
• Est. Priority Date: 05/22/1997
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Spanier, Jonathan E.
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US08/862,102
• Time in Patent Office: 817 Days
• Field of Search: 257/77, 257/103, 257/98
• US Class Current: 257/77
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emission of spectrally narrow visible light in the deep blue to UV range, in a highly directed pattern. The deep, intense blue luminescence is accomplished via the appropriate preparation and passivation of a single porous silicon carbide layer, followed by the deposition of a transparent, semiconducting layer, such as ITO (In₂ O₃) or ZnO.

Claims

1. A light emitting diode device comprising:

a quarter-wavelength mirror structure formed within a substrate of silicon carbide of a first conductivity, said quarter-wavelength mirror structure comprising a multilayer porosity superlattice;

a transparent layer of semiconducting material of a second conductivity opposite to said first conductivity;

a light emitting layer of semiconducting material of said first conductivity disposed between said quarter-wavelength mirror structure and said transparent layer of semiconducting material.

2. The device according to claim 1, wherein said first conductivity is n-type and said second conductivity is p-type.

3. The device according to claim 1, wherein said first conductivity is p-type and said second conductivity is n-type.

4. The device according to claim 1, wherein said light emitting layer of semiconducting material comprises porous silicon carbide.

5. The device according to claim 1, wherein said light emitting layer of semiconducting material comprises gallium nitride.

6. The device according to claim 1, wherein said transparent layer of semiconducting material comprises indium tin oxide.

7. The device according to claim 1, wherein said transparent layer of semiconducting material comprises zinc oxide.

8. The device according to claim 1, wherein said multilayer porosity superlattice comprises greater than two layers of porous silicon carbide.

9. The device according to claim 8, wherein said greater than two layers of porous silicon carbide have alternating porosities.

10. The device according to claim 8, wherein said greater than two layers of porous silicon carbide comprise at least three porous layers having three different porosity values which cycle in a periodic manner.